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    1550NM PHOTODIODE 1.6 GHZ Search Results

    1550NM PHOTODIODE 1.6 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSF-5312-20DA-3 Amphenol Communications Solutions 1.25G CSFP 20km 1550nm/1310nm I Temp Visit Amphenol Communications Solutions
    CSF-5312-40DA-3 Amphenol Communications Solutions 1.25G CSFP ER 1550nm/1310nm I Temp Visit Amphenol Communications Solutions
    CSF-5312-20D-3 Amphenol Communications Solutions 1.25G CSFP 20km 1550nm/1310nm C Temp Visit Amphenol Communications Solutions
    F2977NEGK Renesas Electronics Corporation High Linearity Broadband SP2T 30MHz to 6GHz RF Switch Visit Renesas Electronics Corporation
    ISL71934MRTZ Renesas Electronics Corporation Radiation Tolerant 6GHz SPDT RF Switch Visit Renesas Electronics Corporation

    1550NM PHOTODIODE 1.6 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transceivers, transponders, optical


    Original     		PDF LX3051

    VCSEL array, 850nm

    Abstract: EML TOSA HFE4381-521 1310nm laser diode for 10Gbps APD 10gbps 1550nm photodiode 1.6 Ghz Diode - LED 1550nm - IR 1550nm TOSA EML VCSEL photodiode 850nm APD
    Text: DATA SHEET 1.25GBPS 850NM VCSEL SC TOSA PACKAGE HFE438X-521 FEATURES: TO-46 tilt window metal can component, prealigned into SC Sleeve Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz


    Original     		PDF 25GBPS 850NM HFE438X-521 HFE438x-521 1-866-MY-VCSEL VCSEL array, 850nm EML TOSA HFE4381-521 1310nm laser diode for 10Gbps APD 10gbps 1550nm photodiode 1.6 Ghz Diode - LED 1550nm - IR 1550nm TOSA EML VCSEL photodiode 850nm APD

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-322 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating also


    Original     		PDF 25GBPS 850NM HFE408X-322 HFE408x-322 1-866-MY-VCSEL

    PIN photodiode responsivity 1550nm 1.1

    Abstract: PIN photodiode InGaAs 1550nm PIN Photodiode 1550nm sensitivity photodiode 1550nm 4 Ghz InGaAs Photodiode 1550nm PIN photodiode responsivity 1550nm 2,5 GHz InGaas PIN photodiode flipchip PIN Photodiode 1310nm
    Text: Obsolete Product – not recommended for new design LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ LX3051 single die Coplanar Waveguide , 50 ohm High Responsivity Low Dark Current


    Original     		PDF LX3051 1310nm 1550nm PIN photodiode responsivity 1550nm 1.1 PIN photodiode InGaAs 1550nm PIN Photodiode 1550nm sensitivity photodiode 1550nm 4 Ghz InGaAs Photodiode 1550nm PIN photodiode responsivity 1550nm 2,5 GHz InGaas PIN photodiode flipchip PIN Photodiode 1310nm

    HFE4084-322

    Abstract: HFE4083-322 HFE408X-322 APD Arrays 25GBPS 850NM 1550nm photodiode 1.6 Ghz high power 850nm ld laser diode for optical communication HFE4084
    Text: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-322 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating also


    Original     		PDF 25GBPS 850NM HFE408X-322 HFE408x-322 1-866-MY-VCSEL HFE4084-322 HFE4083-322 APD Arrays 1550nm photodiode 1.6 Ghz high power 850nm ld laser diode for optical communication HFE4084

    VCSEL array, 850nm

    Abstract: 1550nm photodiode 1.6 Ghz 850nm apd 850nm VCSEL application HFE4081-321 multi mode vcsel VCSEL 980nm HFD3081-108 850 nm LED for fiber sensor APD Arrays
    Text: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-321 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating


    Original     		PDF 25GBPS 850NM HFE408X-321 HFE408x-321 1-866-MY-VCSEL VCSEL array, 850nm 1550nm photodiode 1.6 Ghz 850nm apd 850nm VCSEL application HFE4081-321 multi mode vcsel VCSEL 980nm HFD3081-108 850 nm LED for fiber sensor APD Arrays

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-322 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating also


    Original     		PDF 25GBPS 850NM HFE408X-322 HFE408x-322 1-866-MY-VCSEL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1.25GBPS 850NM VCSEL SC TOSA PACKAGE HFE438X-521 FEATURES: TO-46 tilt window metal can component, prealigned into SC Sleeve Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz


    Original     		PDF 25GBPS 850NM HFE438X-521 HFE438x-521 1-866-MY-VCSEL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-321 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating


    Original     		PDF 25GBPS 850NM HFE408X-321 HFE408x-321 1-866-MY-VCSEL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-321 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating


    Original     		PDF 25GBPS 850NM HFE408X-321 HFE408x-321 1-866-MY-VCSEL

    SPV3313-QJ

    Abstract: 1550nm catv receiver HUW9623150-01I SPV3313-CJ SPV3313-CN SPV3313-QN SPV3313-XJ SPV3313-XN SPV3315-CJ SPV3315-CN
    Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SPV3310 Series HUW9623150-01I July 23, 2001 Technical Specification of Long Wavelength PIN Photodiode Module for Wide Frequency-range CATV Receiver SPV3310 Series Page 1 of 7 Sumitomo Electric Industries, Ltd.


    Original     		PDF SPV3310 HUW9623150-01I 1310nm 1550nm, 860MHz. HUW9623150-01G SPV3313-QJ 1550nm catv receiver HUW9623150-01I SPV3313-CJ SPV3313-CN SPV3313-QN SPV3313-XJ SPV3313-XN SPV3315-CJ SPV3315-CN

    InGaAs Photodiode 1550nm

    Abstract: No abstract text available
    Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SPV3210 Series HUW0424106-01A September 29, 2004 Preliminary Specification of Long Wavelength PIN Photodiode Module for Wide Frequency-range CATV Receiver SPV3210 Series Page 1 of 7


    Original     		PDF SPV3210 HUW0424106-01A 1310nm 1550nm, 860MHz. InGaAs Photodiode 1550nm

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 BALL LENS PACKAGE HFE4085-521 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Packaged with a photodetector The HFE4085-521 is a high radiance VCSEL designed to convert electrical


    Original     		PDF 25GBPS 850NM HFE4085-521 HFE4085-521 1-866-MY-VCSEL

    XL Photonics

    Abstract: photo-diode bias InGaAs apd photodiode XPD0250CT-003 2.5G APD 25gbps pin-tia PIN-TIA InGaAs PIN photodiode Long Wavelength 2.6 InGaAs Photodiode 1550nm PIN Photodiode 1550nm sensitivity
    Text: 2.5 Gbps PIN-TIA module XPD0250CT-003 FEATURES Wide dynamic range, typically 2 µW to 1.6 mW p-p Automatic Gain Controlled Differential transimpedance of 3.5 ㏀ Bandwidth from DC to 2.1 GHz Differential outputs Single supply voltage 3.3 V Remains linear up to 50 µW (p-p) input power(unclipped)


    Original     		PDF XPD0250CT-003 XPD0250CT-003-A1SFPN XL Photonics photo-diode bias InGaAs apd photodiode XPD0250CT-003 2.5G APD 25gbps pin-tia PIN-TIA InGaAs PIN photodiode Long Wavelength 2.6 InGaAs Photodiode 1550nm PIN Photodiode 1550nm sensitivity

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 BALL LENS PACKAGE HFE4085-521 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Packaged with a photodetector The HFE4085-521 is a high radiance VCSEL designed to convert electrical


    Original     		PDF 25GBPS 850NM HFE4085-521 HFE4085-521 1-866-MY-VCSEL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 BALL LENS PACKAGE HFE4085-521 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Packaged with a photodetector The HFE4085-521 is a high radiance VCSEL designed to convert electrical


    Original     		PDF 25GBPS 850NM HFE4085-521 HFE4085-521 1-866-MY-VCSEL

    SPV3210

    Abstract: SPV3213-QN PIN Photodiode 1550nm 1550nm catv receiver 1550nm photodiode 1.6 Ghz HUW0424106-01C Sumitomo 1000 InGaAs Photodiode 1550nm
    Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SPV3210 Series HUW0424106-01C February 29, 2008 Technical Specification of Long Wavelength PIN Photodiode Module for Wide Frequency-range CATV Receiver SPV3210 Series RoHS Compliant


    Original     		PDF SPV3210 HUW0424106-01C 1310nm 1550nm, 860MHz. SPV3213-QN PIN Photodiode 1550nm 1550nm catv receiver 1550nm photodiode 1.6 Ghz HUW0424106-01C Sumitomo 1000 InGaAs Photodiode 1550nm

    TAP4NN3

    Abstract: ITU-T G.651 Analog Photodiode, 1550nm, TBP4NN3 PIN photodiode responsivity 1550nm 1.1 G651 photodiode 1550nm pigtailed 1550nm photodiode 5 Ghz PIN photodiode 5ghz pigtailed
    Text: Pigtailed PD for analog application TAP4NN3 series Long wavelength InGaAs PIN-PD Detection wavelength range of 1.1µm to 1.6µm SMF or MMF Pigtailed SC, FC, ST, or LC Connector Family Model TAP4NN3 TZP4NN3 TBP4NN3 Features InGaAs long wavelength PIN photodiode


    Original     		PDF 1310nm 1550nm 25Gbps 125Gbps DS-TP-110-Rev01 TAP4NN3 ITU-T G.651 Analog Photodiode, 1550nm, TBP4NN3 PIN photodiode responsivity 1550nm 1.1 G651 photodiode 1550nm pigtailed 1550nm photodiode 5 Ghz PIN photodiode 5ghz pigtailed

    LX3051

    Abstract: InGaAs P InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 InGaas PIN photodiode chip
    Text: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar


    Original     		PDF LX3051 InGaAs P InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 InGaas PIN photodiode chip

    FP-1310-5I-100SMF-SCUPC

    Abstract: LED 1310 nm fiber coupled FP131 1550nm DFB laser diode for 10Gbps to56 1550nm laser diode for 10Gbps laser diode 1310 nm fiber coupled 1310 vcsel 1550nm photodiode 5 Ghz inalgaas 1310
    Text: Preliminary DATA SHEET 1310 NM FABRY-PEROT FP LASER DIODE PIGTAILED PACKAGE FP-1310-5I-XXX FEATURES: Wide operating temperature (-40°C to 85°C) Stable threshold current for easy transmitter control (T0 ~ 80K) 1310 nm typical emission wavelength FP-LDs


    Original     		PDF FP-1310-5I-XXX FP-1310-5I-xxx 1-866-MY-VCSEL FP-1310-5I-100SMF-SCUPC LED 1310 nm fiber coupled FP131 1550nm DFB laser diode for 10Gbps to56 1550nm laser diode for 10Gbps laser diode 1310 nm fiber coupled 1310 vcsel 1550nm photodiode 5 Ghz inalgaas 1310

    1550nm VCSEL

    Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
    Text: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar


    Original     		PDF LX3051 1310nm 1550nm 1550nm VCSEL InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2

    InGaAs Photodiode 1550nm

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has • d>35 /i m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having


    OCR Scan     		PDF 1600nm. 1550nm InGaAs Photodiode 1550nm

    1550nm photodiode 5 Ghz

    Abstract: 1550nm photodiode 1.6 Ghz avalanche 1550nm photodiode 5 Ghz cd photo diode avalanche photodiode 1550nm InGaAs Photodiode 1550nm 1550nm photodiode 8 Ghz PIN Photodiode 1550nm PIN Photodiode 1550nm 4 ghz PD8933
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • 035 a • L o w noise s e n s itiv e receiving the area of 035 light having fim , PD 8X X 3 a wavelength


    OCR Scan     		PDF 1600nm. 1550nm 1550nm photodiode 5 Ghz 1550nm photodiode 1.6 Ghz avalanche 1550nm photodiode 5 Ghz cd photo diode avalanche photodiode 1550nm InGaAs Photodiode 1550nm 1550nm photodiode 8 Ghz PIN Photodiode 1550nm PIN Photodiode 1550nm 4 ghz PD8933

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • <t>35^m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having


    OCR Scan     		PDF 1600nm. 1550nm