CA37
Abstract: SMA37
Text: A37/SMA37 10 TO 2000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT LEVEL: +15 dBm TYP. · HIGH THIRD ORDER I.P.: +28 dBm (TYP.) · WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency
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A37/SMA37
SMA37
CA37
SMA37
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CA28
Abstract: SMA28
Text: Cascadable Amplifier 10 to 1500 MHz A28/ SMA28 V3 Features • • • • Product Image HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +29 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS AVAILABLE IN SURFACE MOUNT Description The A28 RF amplifier is a discrete thin film hybrid design, which
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SMA28
CA28
SMA28
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1617AB15
Abstract: BVces
Text: 1617AB15 15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB15 is a COMMON EMITTER transistor capable of providing 15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz. This transistor is specifically designed for SATCOM BASE STATION
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1617AB15
1617AB15
BVces
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CA33
Abstract: SMA33
Text: A33/SMA33 10 TO 2000 MHz TO-8 CASCADABLE AMPLIFIER • AVAILABLE IN SURFACE MOUNT · LOW NOISE FIGURE 4.5 dB TYP. · +3 dBm OUTPUT LEVEL (TYP.) · WIDE POWER SUPPLY RANGE +8 TO +15 VOLTS Specifications (Rev. Date: 2/02)* Characteristics Typical Frequency
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A33/SMA33
SMA33
CA33
SMA33
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4435 ic
Abstract: data sheet IC 4435 IC 2272 DATASHEET IC 7446 1140-17 02580 2482 TRANSISTOR data sheet ic 7446 IC 7446 A 158314
Text: 80143 1.0 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 80143 is a COMMON EMITTER transistor capable of providing 1.0 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes
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STELLEX
Abstract: No abstract text available
Text: A80-1/SMA80-1 10 TO 200 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >32 dB TYP. · VERY LOW NOISE: 2.0 dB (TYP.) · HIGH GAIN: 27.3 dB (TYP.) · HIGH EFFICIENCY: 29 mA AT 15 VOLTS (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)*
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A80-1/SMA80-1
50-ohm
STELLEX
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Untitled
Abstract: No abstract text available
Text: A5-6/SMA5-6 5 TO 600 MHz CASCADABLE AMPLIFIER • FLAT BANDWIDTH: ± .2 dB TYP. · LOW VSWR: 1.3:1 (TYP.) · WIDE POWER SUPPLY RANGE: +8 TO +15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)
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NTE362
Abstract: No abstract text available
Text: NTE362 Silicon NPN Transistor RF Power Description: The NTE362 is designed for 7.0 to 15 volts, UHF large signal amplifier applications required in industrial and commercial FM equipment operating in the 400 to 960MHz range. Features: D D D D Specified 12.5 Volt, 470MHz Characteristics Power Output = 2.0 Watts
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NTE362
NTE362
960MHz
470MHz
100mA,
267mA,
470MHz
240mA,
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15W20
Abstract: MCCQ01
Text: polyfet rf devices MCCQ01 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 20 to 520 Mhz Gain = 27.0 dB Vdd = 25.0 Volts 50 ohms Input/Output Impedance Description The MCCQ01 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 20-520 Mhz. The operating temperature range
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MCCQ01
MCCQ01
520MHz
28Vdc
13dBm
20MHz
15W20
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1263 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION
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MS1263
MS1263
500mA
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ISO 14405
Abstract: VN118 PS219B2-AS
Text: PS219B2-S, PS219B2-AS, PS219B2-CS Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 724 925-7272 www.pwrx.com Intellimod Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts PS219B2-S A D N O P 17 16 15 14 13 12 11 10 9 8 7 6
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PS219B2-S,
PS219B2-AS,
PS219B2-CS
Amperes/600
PS219B2-S
ISO 14405
VN118
PS219B2-AS
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2n4401 configuration
Abstract: transistor 2n4403 equivalent
Text: NEW PRODUCT NEW PRODUCT 2N4403 SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the NPN transistor
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2N4403
2N4401
OT-23
MMBT4403.
2n4401 configuration
transistor 2n4403 equivalent
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HP8412A
Abstract: HP8601A ha-5180 capacitor 50k HA-5102 HA-5130 AN551 AN-551-1 HA-5141/HP8412A
Text: Harris Semiconductor No. AN551.1 Harris Linear November 1996 Recommended Test Procedures for Operational Amplifiers Authors: Wes Kilgore and Brian Mathews Introduction The following text describes the basic test procedures that can be used for most Harris Op Amps. Note that all
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AN551
HP8601A
HP8412A
HP8412A
HP8601A
ha-5180
capacitor 50k
HA-5102
HA-5130
AN-551-1
HA-5141/HP8412A
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MP4T3243
Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
Text: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers
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MP4T3243
OT-23
MP4T324335
Bipolar Transistor
NPN bipolar junction transistors max hfe 2000
MP4T324300
mag710
MP4T324333
MP4T324335
S21E
S22E
sot23 1303
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MPA202
Abstract: acrian inc
Text: 0182998 AGRIAN GENERAL INC 17 DE^H O l ñ E T T ñ 0 0 0 1 0 5 0 ñ D T-33-11 MPA 202 DESCRIPTION 1.0 WATTS - 15 VOLTS 200 MHz The MPA 202 is a HYBRID AMPLIFIER MODULE designed for broadband performance up to 200 MHz in a format suitable for stripiine assembly and high reliability
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T-33-11
50dBm
MPA202
acrian inc
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pentodes
Abstract: RADIOTRON ST-12 1B40 Scans-0017344
Text: R A D I O T R' ON IK ‘4 PENTODE AM PLIFIER Filament i Voltage Current Maximum Overall Length Maximum diameter Bulb Cap Mounting Position Base «* Pin 1-Filament ♦ ¡Pin 2 -Plate Pin 3-Screen • Coated 2.0 * 0.12 d-c volts amp. 4-15/16" 1-9/76" ST-1 f
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10TRON
pentodes
RADIOTRON
ST-12
1B40
Scans-0017344
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H100-28
Abstract: S15-28-2 acrian H100-50 30MHZ S15-28 acrian inc
Text: 0182998 ACRIAN INC ^7 DE 0001155 7 |~ . ^ 2 -3 3 -1 1 S15-28 GENERAL DESCRIPTION 15 WATTS - 28 VOLTS t.5 - 30 MHZ The S15-28 is designed for driver and output applications in the HF, 1.6-30 MHz range. It features state-of-the-art ruggedness and linearity and may be operated Class A, AB or C.
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T-33-
S15-28
S15-28
H100-28
S15-28-2
acrian H100-50
30MHZ
acrian inc
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6C10
Abstract: 6c10 triple triode E12-70 6c10 triode A6090
Text: 6CI0 TUNS-SOL • T R I P L E TRI ODE COATED UN IPOTENT IAL CATHODE — 'l6 -J MAX -►HEATER NOMINAL t 6.3 H 1 CO |! 12 MAX 0.6±0.04 Am p . AC OR DC 16 ANY MOUNTING POSITION MAX I mm Volts 15 BOTTOM VIEW GLASS BULB BASING BUTTON 12 PIN B ASE E l 2-70 DIAGRAM
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E12-70
6C10
6c10 triple triode
E12-70
6c10 triode
A6090
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IRFP350
Abstract: D88FQ2 TRANSISTOR A06
Text: IRFP350,351 D88FQ2.Q1 [MET FIELD EFFECT POWER TRANSISTOR 15 AMPERES 400, 350 VOLTS RPS ON = 0-3 n This series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er MOSFETs utilizes G E ’s advanced Power D M O S technology to achieve low on-resistance with excellent device rugged
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IRFP350
D88FQ2
ruggedness300
/D88FG
IRFP350/D88FQ2â
TRANSISTOR A06
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rca tube 53
Abstract: 210 radiotron RADIOTRON T-20 LB1944 rca company r18000 VOLTAGE SUPPRESSOR
Text: R-F POWER AMPLIFIER PENTODE Filament Voltage Current Transconductance Thoriated Tungsten 10 5 for plate current of 6 2 . 5 m a. a-c or d-c volts amp. . pmnos 4000 Direct Interelectrode Capacitances: Grid t o P la te wi th ext ern al s hi e l d i n g 0 .1 5 max.
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92CM-4426TI
VOLTS3600
92CM-442STI
92C-4749
92C-4750
92C-4750
92C-4751
rca tube 53
210 radiotron
RADIOTRON
T-20
LB1944
rca company
r18000
VOLTAGE SUPPRESSOR
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5902 TUBE
Abstract: 5902 pentode 5902 rs tube subminiature tubes
Text: 5902 ET-T1099A 5902 P a ge 1 11-56 PENTODE Five-Star Tube TUBES ★ ★ ★ ★ ★ FOR AF POWER AMPLIFIER APPLICATIONS SHOCK, VIBRATION RATINGS HEATER-CYCLING RATING 8-LEAD SUBMINIATURE POWER OUTPUT— 1 WATT DESCRIPTION AND RATING BASING DIAG RAM The 5902 is a subminiature beam power pentode for use as an audio
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ET-T1099A
5902 TUBE
5902
pentode 5902
rs tube
subminiature tubes
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6SN7
Abstract: 6sn7 tube 12SN7 6SN7 Triode 6sn7gtb 6sn7 twin triode 6SN7GTA tube 6sn7 12sn7 tube 6SN7-GTB-6SN7-GTA-12SN7-GTA
Text: 6SN7-GTB 6SN7-GTB— 6SN7-GTA— 12SN7-GTA 6 S N 7 -G T A 12SN7-G TA ET-T899 Page 1 TWIN TRIODE TUBES 10-54 DESCRIPTION AND RATING BASING DIAG RAM The 6SN7-GTB is a medium-mu twin triode suitable for use in a wide variety of general-purpose amplifier and phase-inverter applications. It is
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12SN7-GTA
600-milliampere
ET-T899
ET-T899
6SN7
6sn7 tube
12SN7
6SN7 Triode
6sn7gtb
6sn7 twin triode
6SN7GTA
tube 6sn7
12sn7 tube
6SN7-GTB-6SN7-GTA-12SN7-GTA
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2N2900
Abstract: 2N4033 2N2897 2N2898 2N2899 2N3019 2N3020 2N3036 2N3053 2N3056
Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C M axim um Ratings Type Polarity PD Ambient mW VCB Volts VCE Volts V eb Volts V c E (S a t) @ Ic / lß H f e >C Min/Max mA Volts ft MHz m A/m A Cob
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2N2897
2N2898
2N2899
2N2900
2N3019
2N3020
2N3036
2N3053
2N4031
2M4032
2N4033
2N3056
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HYBRID ICs M57957L HYBRID 1C FOR DRIVING IGBT MODULES Hybrid Integrated Circuit For Driving IGBT Modules Description: M57957L is a hybrid integrated cir cuit designed for driving n-channel IGBT modules in any gate amplifier application. This device operates
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M57957L
M57957L
30kHz,
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