LMH6321TS-EVAL
Abstract: 1461 transistor AN-1461 LM321 LM8261 LMH6321 an-1461 national
Text: National Semiconductor Application Note 1461 November 2006 General Description characterization. Both boards have identical circuit configurations and are designed for either inverting or non-inverting gain. The evaluation board schematic is shown in Figure 1. The
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LMH6321MR-EVAL
LMH6321TS-EVAL
AN-1461
LMH6321TS-EVAL
1461 transistor
AN-1461
LM321
LM8261
LMH6321
an-1461 national
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LMH6321
Abstract: LM8261 AN-1461 LM321 LMH6321TS-EVAL 2019.0002
Text: National Semiconductor Application Note 1461 June 2006 General Description characterization. Both boards have identical circuit configurations and are designed for either inverting or non-inverting gain. The LMH6321MR-EVAL for the 8-Pin PSOP type package
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LMH6321MR-EVAL
LMH6321TS-EVAL
LMH6321
O-263)
AN-1461
LMH6321
LM8261
AN-1461
LM321
LMH6321TS-EVAL
2019.0002
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1461 smd
Abstract: D1207 MSK1461 MSK1461B MSK1461E
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. HIGH SPEED/VOLTAGE OP AMP 1461 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown Large Gain-Bandwidth Product
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MIL-PRF-38534
800mA
MSK1461
MSK1461E
MSK1461B
1461 smd
D1207
MSK1461
MSK1461B
MSK1461E
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A19 SMD transistor
Abstract: No abstract text available
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown
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MIL-PRF-38534
500v/Â
800mA
MSK1461
MSK1461E
MSK1461B
A19 SMD transistor
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vmos fet
Abstract: VMOS AUDIO AMPLIFIER vmos audio circuit MSK1461 MSK1461B
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions
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MIL-PRF-38534
800mA
MSK1461
MSK1461B
Military-Mil-PRF-38534
vmos fet
VMOS AUDIO AMPLIFIER
vmos audio circuit
MSK1461
MSK1461B
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MAX4526
Abstract: MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
Text: 19-1461; Rev 0; 4/99 Serially Controlled, Clickless Audio/Video Switches The MAX4562/MAX4563 serial-interface controlled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and
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MAX4562/MAX4563
20kHz
-85dB,
10MHz
-55dB.
MAX4562
MAX4563
MAX4562/MAX4563
MAX4526
MAX456
MAX4562CEE
MAX4562EEE
MAX4563CEE
MAX4563EEE
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I2C and SPI/QSPI/MICROWIRE
Abstract: MAX4526 MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
Text: 19-1461; Rev 0; 4/99 Serially Controlled, Clickless Audio/Video Switches The MAX4562/MAX4563 serial-interface controlled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and
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MAX4562/MAX4563
20kHz
-85dB,
10MHz
-55dB.
MAX4562
MAX4563
MAX4562/MAX4563
I2C and SPI/QSPI/MICROWIRE
MAX4526
MAX456
MAX4562CEE
MAX4562EEE
MAX4563CEE
MAX4563EEE
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Untitled
Abstract: No abstract text available
Text: 19-1461; Rev 0; 4/99 Se ria lly Cont rolle d, Clic k le ss Audio/Vide o Sw it c he s The MAX4562/MAX4563 serial-interfac e c ontrolled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and
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MAX4562/MAX4563
20kHz
-85dB,
10MHz
-55dB.
MAX4562
MAX4563
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MAX4526
Abstract: MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
Text: 19-1461; Rev 0; 4/99 概要 _ 特長 _ MAX4562/MAX4563はマルチメディアアプリケー ションに最適のシリアルインタフェース制御スイッチ です。各デバイスは、オン抵抗 RON 30Ω(max)、RON
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MAX4562/MAX4563
20kHz
-85dB10MHz
-55dB
MAX4562/MAX45632
MAX4562
MAX45633SPITM/QSPITM/MICROWIRETM
16QSOP
20kHz-85dB
MAX4526
MAX456
MAX4562
MAX4562CEE
MAX4562EEE
MAX4563
MAX4563CEE
MAX4563EEE
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-3 8 5 3 4 C ERTIFIED M .S.KEN NED Y C ORP. 1461 HIGH SPEED/V OLT A GE OP A MP 4 7 0 7 D e y Road Liv erpool, N. Y . 1 3 0 8 8 3 1 5 7 0 1-6 7 5 1 FE A T URES: Ex tremely F ast - 5 0 0 v/µS W ide Supply Range ± 1 5 V to ± 4 5 V V M OS Output, No Secondary Breakdo w n
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MSK1461
MSK1461E
MSK1461B
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Untitled
Abstract: No abstract text available
Text: TDA2050 32 W hi-fi audio power amplifier Features • High output power 50 W music power IEC 268.3 rules ■ High operating supply voltage (50 V) ■ Single or split supply operations ■ Very low distortion ■ Short-circuit protection (OUT to GND) ■
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TDA2050
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74HC9046
Abstract: 74hct4050 74HC273 CMOS TTL Logic Family Specifications 74hc245 74HCT297 74hc154 application 74hct133 74hc297 application notes 74HC7014 74HCT299
Text: INTEGRATED CIRCUITS DATA SHEET FAMILY SPECIFICATIONS HCMOS family characteristics March 1988 File under Integrated Circuits, IC06 INTEGRATED CIRCUITS DATA SHEET Package outline drawings January 1996 File under Integrated Circuits, IC06 Philips Semiconductors
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OT27-1
OT38-4
OT146-1
OT101-1
OT222-1
OT117-1
74HCU
74HCT
74HC9046
74hct4050
74HC273
CMOS TTL Logic Family Specifications 74hc245
74HCT297
74hc154 application
74hct133
74hc297 application notes
74HC7014
74HCT299
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TDA2050
Abstract: TDA2050 pin layout tda 1040 application tda2050 TDA2050 audio circuit Tda 2050
Text: TDA2050 32 W hi-fi audio power amplifier Features • High output power 50 W music power IEC 268.3 rules ■ High operating supply voltage (50 V) ■ Single or split supply operations ■ Very low distortion ■ Short-circuit protection (OUT to GND) ■
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TDA2050
TDA2050
TDA2050 pin layout
tda 1040
application tda2050
TDA2050 audio circuit
Tda 2050
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tda2050
Abstract: No abstract text available
Text: TDA2050 32 W hi-fi audio power amplifier Features • High output power 50 W music power IEC 268.3 rules ■ High operating supply voltage (50 V) ■ Single or split supply operations ■ Very low distortion ■ Short-circuit protection (OUT to GND) ■
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TDA2050
tda2050
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fairchild AG33
Abstract: K30 mosfet rPGA-989 transistor r14 ah16 MPCh1040LR36 r33 ah16 burndy Y35 ONSEMI diode a30 K34 mosfet K26 mosfet
Text: ISL62882EVAL2Z User Guide Application Note July 13, 2009 AN1461.1 Author: Jia Wei Introduction Interface Connections The ISL62882EVAL2Z evaluation board demonstrates the performance of the ISL62882 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5
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ISL62882EVAL2Z
AN1461
ISL62882
fairchild AG33
K30 mosfet
rPGA-989
transistor r14 ah16
MPCh1040LR36
r33 ah16
burndy Y35
ONSEMI diode a30
K34 mosfet
K26 mosfet
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1461 transistor
Abstract: 1461 TELEDYNE 1461
Text: WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from ±15V to +40V supplies, has output voltages up to ±34V, and output
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TELEDYNE 1461
Abstract: TELEDYNE+1461
Text: TELEDYNE C O M PO N EN T S 3bE D • â^l?tOE DGG?fe.2b b « T S C * T * 7 0v- 0 ‘ 7 - \ C WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from +15V to
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1461X1
01--Lf
fiS17bOB
DD07b3B
TELEDYNE 1461
TELEDYNE+1461
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RFP12N18
Abstract: RFP12N20 RFP12M20 RFP mosfets RFM12N18 RFM12N20
Text: Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 F ile N u m b e r 1461 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 180 and 200 V rDs on : 0.25 n Features: • SOA is power-dissipation lim ited • Nanosecond sw itching speeds
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RFM12N18,
RFM12N20,
RFP12N18,
RFP12N20
92CS-33741
RFM12N18
RFM12N20
RFP12N18
RFP12N20*
RFP12N20
RFP12M20
RFP mosfets
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Untitled
Abstract: No abstract text available
Text: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions
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S1343D0
D0002D2
1461B
Mil-H-38534
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sk1461
Abstract: sk 100 transistor
Text: M í f t H,GH SPoEpEampOLTAGE 1 4 6 1 M .S . K E N N E D Y C O R P 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions Large Galn-Bandwldth Product FET Input
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1461B
MII-H-38534
sk1461
sk 100 transistor
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IS955
Abstract: marking Y24 2SA1461 2SC3734 marking 2 AW
Text: NEC / ELECTRON DEVICE j SILICON TRANSISTOR / _ _ . _ . _ . 2SA1461 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed Switching: t stg = 110 ns 2.8 ± 0.2 • High Gain Bandwidth Product : f j = 5 1 0 M H z
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2SA1461
2SC3734
IS955
marking Y24
2SA1461
2SC3734
marking 2 AW
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j139
Abstract: 0395 ADC BD179 BD180 3268 127 D TRANSISTOR H127
Text: motorola x s t r s /r sc 12E D § b3b7SS4 QQÖ4713 2 | f MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD179
BD180
Q0fi4713
O-22SAA
j139
0395 ADC
BD180
3268
127 D TRANSISTOR
H127
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482 transistor
Abstract: transistor f 482
Text: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • ¿r= 8G H z F = 1.2dB at 900MHz • Two galvanic internal isolated XL Transistors in one package "p H ETE" a ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1573
OT-363
482 transistor
transistor f 482
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bo 139
Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Text: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing
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L3b72S4
0GflM703
BD135
BD137
BD139
225AA
bo 139
bd 1382 semiconductor
bo 137
BD 266 S
BD 139 N
bd 317
BD139.6
TR bd 139
BD139 NPN
BD 139 140
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