Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs
|
Original
|
144PIN
PC133
256MB
16MX16
TS32MSS64V6G
32Mx64
TS32MSS64V6G
JEP-108E
|
PDF
|
SuperPro-5000
Abstract: atmel 89C51 user manual atmel 89C51 projects Superpro 3000U CF Socket DIP48 PLCC20 PIN DIAGRAM AND WORKING OF AT 89C51 89c51 c programming examples XELTEK cx0001 SUPERPRO 500P
Text: User’s Guide XELTEK Superpro 5000 Series Ultra-Fast, Stand‐Alone, 144pin Programmer of the Future XELTEK 1296 Kifer Rd. Unit 605 Sunnyvale, CA 94086 Tel: 408 530‐8080 Fax: (408) 530‐0096 www.xeltek.com IMPORTANT! 1. This manual applies to SuperPro 5000, SuperPro 5000E, SuperPro
|
Original
|
144pin
5000E,
SuperPro-5000
atmel 89C51 user manual
atmel 89C51 projects
Superpro 3000U CF Socket
DIP48
PLCC20
PIN DIAGRAM AND WORKING OF AT 89C51
89c51 c programming examples
XELTEK cx0001
SUPERPRO 500P
|
PDF
|
K4S560832E
Abstract: K4S561632E
Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004
|
Original
|
128MB,
256MB,
512MB
144pin
256Mb
64-bit
K4S560832E
K4S561632E
|
PDF
|
K4S281632F
Abstract: m464s1724f K4S281632
Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
|
Original
|
128MB
144pin
64-bit
M464S0924FT59
8Mx16
K4S281632F
m464s1724f
K4S281632
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 144PIN PC133 MICRO SO-DIMM 256MB With 32M X 8 CL3 TS32MMS64V6F Description Placement The TS32MMS64V6F is a 32M x 64bits Synchronous Dynamic RAM high-density for PC-133. The TS32MMS64V6F consists of 8pcs CMOS 32Mx8 bits C Synchronous DRAMs in SOC packages and a 2048 bits
|
Original
|
144PIN
PC133
256MB
TS32MMS64V6F
TS32MMS64V6F
64bits
PC-133.
32Mx8
144-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX8 CL3 TS32MSS64V6D Pin Identification Description The TS32MSS64V6D is a 32M bit x 64 Synchronous Dynamic RAM high-density memory module. The Symbol Function A0~A11 Address inputs BA0,BA1 Banks Select packages, a 2048 bits serial EEPROM and 1 piece of
|
Original
|
144PIN
PC133
256MB
16MX8
TS32MSS64V6D
TS32MSS64V6D
144-pin
JEP-108E
|
PDF
|
K4S281632E
Abstract: No abstract text available
Text: 64MB Unbuffered uSODIMM SDRAM SDRAM Unbuffered uSODIMM 144pin Unbuffered uSODIMM based on 128Mb E-die x16 64-bit Non ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 64MB Unbuffered uSODIMM SDRAM Revision History Revision 1.0 (Nov., 2002) - First release Revision 1.1 (May, 2003)
|
Original
|
144pin
128Mb
64-bit
133MHz.
144Pi
M463S0924ET1-C
8Mx16
K4S281632E)
133MHz
K4S281632E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16Mx72 bits PC100 SDRAM SO DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M755HC L T6 Series DESCRIPTION The HYM71V16M755HC(L)T6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of ten 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
|
Original
|
16Mx72
PC100
8Mx16
HYM71V16M755HC
16Mx72bits
8Mx16bits
400mil
54pin
144pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
|
Original
|
32Mx64bits
PC100
16Mx16
HYM72V32M656B
32Mx64bits
16Mx16bits
400mil
54pin
144pin
|
PDF
|
support samsung pc133 sdram
Abstract: pc133 SDRAM DIMM 4MX16
Text: SERIAL PRESENCE DETECT PC133 SODIMM PC133 Unbuffered SDRAM SODIMM 144pin SPD Specification Rev. 0.0 Oct. 1999 Rev. 0.0 Oct. 1999 SERIAL PRESENCE DETECT PC133 SODIMM • Revision History [Revision 0.0] Oct. 11, 1999 Jedec based PC133 SODIMM SPD Published.
|
Original
|
PC133
144pin)
M464S0424CT1-L75/C75
M464S0824CT1-L75/C75
M464S0924BT1-L75/C75
M464S1724BT1-L75/C75
M464S1654AT1-L75/C75
support samsung pc133 sdram
pc133 SDRAM DIMM
4MX16
|
PDF
|
HSD8M64B8A
Abstract: No abstract text available
Text: HANBit HSD8M64B8A Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B8A GENERAL DESCRIPTION The HSD8M64B8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.
|
Original
|
HSD8M64B8A
64Mbyte
8Mx64-Bit)
144pin
HSD8M64B8A
400mil
144-pin
HSD8M64B8
|
PDF
|
kr 720
Abstract: HSD8M64B4W HSD8M64B4W-10 HSD8M64B4W-10L HSD8M64B4W-12
Text: HANBit HSD8M64B4W Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B4W GENERAL DESCRIPTION The HSD8M64B4W is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.
|
Original
|
HSD8M64B4W
64Mbyte
8Mx64-Bit)
144pin
HSD8M64B4W
400mil
144-pin
kr 720
HSD8M64B4W-10
HSD8M64B4W-10L
HSD8M64B4W-12
|
PDF
|
K4S281632C-TL1L
Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L
|
Original
|
144pin)
128Mb
M466S0924CT0-L1L,
8Mx64
8Mx16
K4S281632C-TL1L,
000mil
4K/64ms
128bytes
256bytes
K4S281632C-TL1L
M466S1723CT2-L1L
M466S1723CT3-L1L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16Mx72bits PC100 SDRAM SO DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M755HC L T8 Series DESCRIPTION The HYM71V16M755HC(L)T8 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of nine 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
|
Original
|
16Mx72bits
PC100
16Mx8
HYM71V16M755HC
16Mx72bits
16Mx8bits
400mil
54pin
144pin
|
PDF
|
|
|
m464s64* samsung
Abstract: K4S560832E K4S561632E
Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004
|
Original
|
128MB,
256MB,
512MB
144pin
256Mb
64-bit
m464s64* samsung
K4S560832E
K4S561632E
|
PDF
|
HYM71V16M655BLT8-8
Abstract: HYM71V16M655BLT8-S HYM71V16M655BT8-P HYM71V16M655BT8-S
Text: 16Mx64bits PC100 SDRAM SO DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M655B L T8 Series Preliminary DESCRIPTION The Hynix HYM71V16M655B(L)T8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin
|
Original
|
16Mx64bits
PC100
16Mx8
HYM71V16M655B
16Mx64bits
16Mx8bits
400mil
54pin
144pin
HYM71V16M655BLT8-8
HYM71V16M655BLT8-S
HYM71V16M655BT8-P
HYM71V16M655BT8-S
|
PDF
|
RA12
Abstract: HYM72V32M736BLT6-H
Text: 32Mx72bits PC133 SDRAM ECC SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M736B L T6 Series DESCRIPTION The HYM72V32M736B(L)T6 Series are 32Mx72bits Synchronous DRAM Modules. The modules are composed of ten 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed circuit board.
|
Original
|
32Mx72bits
PC133
16Mx16
HYM72V32M736B
32Mx72bits
16Mx16bits
400mil
54pin
144pin
RA12
HYM72V32M736BLT6-H
|
PDF
|
HYM72V16M656BTU6
Abstract: HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12
Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656BTU6 Series DESCRIPTION The HYM72V16M656BTU6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
|
Original
|
16Mx64
PC100
16Mx16
HYM72V16M656BTU6
8Mx64bits
16Mx16bits
400mil
54pin
144pin
HYM72V16M656TU6-8
HYM72V16M656TU6-P
HYM72V16M656TU6-S
RA12
|
PDF
|
KMM464S824CT1
Abstract: No abstract text available
Text: KMM464S824CT1 PC100 144pin SDRAM SODIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail Y" in PCB Dimension. Rev.0.1 May 1999 KMM464S824CT1 PC100 144pin SDRAM SODIMM KMM464S824CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
Original
|
KMM464S824CT1
PC100
144pin
KMM464S824CT1
8Mx64
4Mx16,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004
|
Original
|
128MB
144pin
64-bit
M464S0924FTS-C
M464S1724FTS-C
|
PDF
|
RA12
Abstract: No abstract text available
Text: 32Mx64bits PC133 SDRAM SO DIMM based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T8 Series DESCRIPTION The HYM72V32M636T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed
|
Original
|
32Mx64bits
PC133
32Mx8
HYM72V32M636T8
32Mx64bits
32Mx8bits
400mil
54pin
144pin
RA12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KMM466S823BT2 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1 uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.
|
OCR Scan
|
KMM466S823BT2
144pin
KM48S8030BT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S824CT2_ 144pin SDRAM SODIMM KMM466S824CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION T he Sam sung K M M 466S 824C T2 is a 8M bit x 64 S ynchronous
|
OCR Scan
|
KMM466S824CT2_
144pin
KMM466S824CT2
8Mx64
4Mx16,
466S824CT2
466S824CT2-
100MHz
400mil
144-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctionai Block Diagram. C hange DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM
|
OCR Scan
|
KMM466S1723T3_
144pin
KMM466S1723T3
16Mx64
16Mx8,
400mil
|
PDF
|
