13PD75LDC-S
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD75LDC-S The 13PD75LDC-S, an InGaAs photodiode with a 75µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is a low-dark-current version of the 13PD75 intended for high speed and low noise applications. The diameter of the photosensitive region is
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13PD75LDC-S
13PD75LDC-S,
13PD75
200oC,
1300nm
-40oC
250oC
13PD75LDC-S
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 1 13PD75-ST, -SMA, -FC, -SC The 13PD75-ST, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high speed and low noise
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13PD75-ST,
1300nm
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InGaAs photodiode TO-46
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD75-TO The 13PD75-TO, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header, is intended for high speed and low noise applications. The diameter of the photosensitive region is
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13PD75-TO
13PD75-TO,
InGaAs photodiode TO-46
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13PD75-S
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD75-S The 13PD75-S, an InGaAs photodiode with 75µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications. The diameter of the photosensitive region is sufficiently small to enable operation
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13PD75-S
13PD75-S,
200oC,
1300nm
-40oC
250oC
13PD75-S
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD75LDC-TO The 13PD75LDC-TO, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO46 header, is a low-dark-current version of the 13PD75 intended for high speed and low noise applications.
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13PD75LDC-TO
13PD75LDC-TO,
13PD75
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD75-S The 13PD75-S, an InGaAs photodiode with a 75µm-diameter photosensitive region mounted on a metallized ceramic substrate, is intended for high speed and low noise applications. The diameter of the photosensitive region is sufficiently small to enable operation at low dark current and low capacitance and
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13PD75-S
13PD75-S,
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InGaAs photodiode
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD75-C Anadigics #137599119 The 13PD75-C, an InGaAs photodiode with a 75µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very
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13PD75-C
13PD75-C,
1300nm
1500nm
-40oC
250oC
InGaAs photodiode
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13PD75-TO
Abstract: No abstract text available
Text: High Speed InGaAs Pin Photodiode 13PD75-TO GCA The planar 13PD75-TO series of InGaAs photodiodes is intended for high speed, low noise, and high linearity applications. The diameter of the photosensitive region is sufficiently small to enable very low dark current and low capacitance operation while offering efficient coupling to
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13PD75-TO
13PD75-TO
200oC,
1300nm
-40oC
250oC
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD75-C Anadigics #137599119 The 13PD75-C, an InGaAs photodiode with a 75µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very
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13PD75-C
13PD75-C,
1300nm
1500nm
-40oC
250oC
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13PD75LDC-ST
Abstract: 13PD75-ST
Text: High Preformance InGaAs p-i-n Photodiode ‘ST’ Active Device Mount 13PD75LDC-ST The 13PD75LDC-ST, an InGaAs photodiode with a 75µm diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is a low-darkcurrent version of the 13PD75-ST intended for high speed and low noise applications. The
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13PD75LDC-ST
13PD75LDC-ST,
13PD75-ST
200oC,
1300nm
-40oC
250oC
13PD75LDC-ST
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13PD75LDC-TO
Abstract: InGaAs photodiode TO-46
Text: High Speed InGaAs p-i-n Photodiode 13PD75LDC-TO The 13PD75LDC-TO, an InGaAs photodiode with 75µm-diameter photosensitive region and packaged in a TO-46 header, is a low-dark-current version of the 13PD75 intended for high speed and low noise applications. The diameter of the photosensitive region is sufficiently small
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13PD75LDC-TO
13PD75LDC-TO,
13PD75
200oC,
1300nm
-40oC
250oC
13PD75LDC-TO
InGaAs photodiode TO-46
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13PD75-FC
Abstract: Photodiode
Text: High Performance InGaAs p-i-n Photodiode ‘FC’ Active Device Mount 13PD75-FC The 13PD75-FC, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned in an FC active device mount, is intended for high speed and low noise applications. Planar semiconductor design and dielectric passivation
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13PD75-FC
13PD75-FC,
200oC,
1300nm
-40oC
250oC
13PD75-FC
Photodiode
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13PD75-F
Abstract: No abstract text available
Text: High Speed Fiber Pigtailed InGaAs p-i-n Photodiode 13PD75-F The 13PD75-F is an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customersupplied fiber in single or multi-mode versions. The coaxial package offers streamlined design
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13PD75-F
13PD75-F
200oC,
1300nm
-40oC
250oC
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13PD75-ST
Abstract: InGaAs photodiode TO-46
Text: High Performance InGaAs p-i-n Photodiode ‘ST’ Active Device Mount 13PD75-ST The 13PD75-ST, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high speed and low noise applications. Planar semiconductor design and dielectric passivation
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13PD75-ST
13PD75-ST,
200oC,
1300nm
-40oC
250oC
13PD75-ST
InGaAs photodiode TO-46
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD75LDC-S The 13PD75LDC-S an InGaAs photodiode with a 75µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is a low-dark-current version on the 13PD75 intended for high speed and low
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13PD75LDC-S
13PD75LDC-S
13PD75
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ic CD4081 pin diagram datasheet
Abstract: 13PD75-TO
Text: High Speed InGaAs p-i-n Photodiode 13PD75-TO The 13PD75-TO, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header, is intended for high speed and low noise applications. The diameter of the photosensitive region is sufficiently small to enable operation at low dark current
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13PD75-TO
13PD75-TO,
200oC,
1300nm
-40oC
250oC
ic CD4081 pin diagram datasheet
13PD75-TO
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 1 13PD75LDC-ST, -SMA, -FC, -SC The 13PD75LDC-ST, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO46 header and aligned in an AT&T ST active device mount, is a low-dark-current version of the 13PD75-ST
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13PD75LDC-ST,
13PD75-ST
1300nm
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD75-F The 13PD75-F is an InGaAs photodiode with a 75mm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customer-supplied fiber in single or multi-mode
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13PD75-F
13PD75-F
75mm-diameter
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Untitled
Abstract: No abstract text available
Text: Fiber Pigtailed Photodiode for CATV Sheet 1 of 3 13PD75-F-HL-LBR The 13PD75-F is a fiber pigtailed photodiode for high speed and low noise voice and video communications. A streamlined co-axial package with either singlemode or multimode fiber provides efficient assembly in electronic boards. Reliability is assured by true hermetic packaging, 100% purge burnin 200°C, –20 VDC, 15hr , planar semiconductor design, and dielectric passivation. The typical dark
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13PD75-F-HL-LBR
13PD75-F
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detector inas
Abstract: No abstract text available
Text: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO
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13PD55
13PD75
13PD75LDC
13PD100
13PD150
35PD300
35PD300LDC
2PD250
detector inas
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2PD250
Abstract: 35PD10M 35PD3M detector inas
Text: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared
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2PD250
2PD500
35PD5M
35PD10M
35PD3M
detector inas
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