SFP CONNECTOR
Abstract: No abstract text available
Text: Qualification Test Report 501-560 13Oct03 Rev O EC 0990-1390-03 SFP Connector and Cage Assemblies 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics stacked SFP 2 X 4 assembly part number 1658390-1, consisting of cage assembly part number 1658224-1 and SFP connector part number 1658296-1, to
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13Oct03
10Jul03
26Aug03.
B044194-002
SFP CONNECTOR
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EIA-364-28
Abstract: EIA-364-65 114-13103 EIA-364-13 EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-32
Text: 108-2161 Product Specification 13Oct03 Rev A EC 0990-1390-03 SFP Connector and Cage Assemblies 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Stacked Small Form-factor Pluggable SFP Connector and Cage Assemblies.
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13Oct03
26Aug03.
EIA-364-28
EIA-364-65
114-13103
EIA-364-13
EIA-364-20
EIA-364-21
EIA-364-27
EIA-364-32
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M39006/22-0357
Abstract: M39006/03-1378 M39006/03-1438 M39006/09-8075
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Capacitors - 6 MIL-PRF-39006-Qualified Styles AND TEC I INNOVAT O L OGY M39006 Series N HN TANTALUM CAPACITORS O 19 62-2012 MIL-PRF-39006 Qualified Styles CLR65, 69, 79, 81, 90, 91 KEY BENEFITS • • •
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MIL-PRF-39006-Qualified
M39006
MIL-PRF-39006
CLR65,
VMN-PT9033-1203
CLR79
CLR79material
MIL-PRF-39006/09/22/25/30/31.
CLR81
M39006/22-0357
M39006/03-1378
M39006/03-1438
M39006/09-8075
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TSOP-6 .54
Abstract: SI3424DV
Text: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 6.7 0.038 @ VGS = 4.5 V 5.7 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET Ordering Information: Si3424DV-T1
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Si3424DV
Si3424DV-T1
18-Jul-08
TSOP-6 .54
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Si4830DY
Abstract: Si4830DY-T1
Text: Si4830DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
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Si4830DY
Si4830DY-T1
18-Jul-08
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Si4947ADY
Abstract: Si4947ADY-T1
Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 Ordering Information: Si4947ADY
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Si4947ADY
Si4947ADY-T1
08-Apr-05
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CLR65
Abstract: CLR79 vishay CLR91 M39006 vishay M39006 clr79 CLR69 MILPRF-39006 MIL-PRF-39006 CLR81
Text: M39 0 0 6 Se r ie s Key Benefits • Available in 6 MIL-PRF-39006-qualified styles • High reliability in extreme conditions • Rated for operation at 11 working voltages: between 6 WVDC and 125 WVDC • Wide temperature range: – 55 °C to + 85 °C up to 125 °C with
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MIL-PRF-39006
CLR65,
MIL-PRF-39006-qualified
CLR79
CLR90
CLR91
CLR81
10questions,
CLR65
CLR79 vishay
M39006
vishay M39006
CLR69
MILPRF-39006
CLR81
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Si2316DS
Abstract: No abstract text available
Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.050 @ VGS = 10 V 3.4 0.085 @ VGS = 4.5 V 2.6 APPLICATIONS D Battery Switch TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2316DS-T1
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Si2316DS
O-236
OT-23)
Si2316DS-T1
S-31990--Rev.
13-Oct-03
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Untitled
Abstract: No abstract text available
Text: Si7947DP Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.014 @ VGS = - 10 V - 13.7 0.025 @ VGS = - 4.5 V - 10.1 APPLICATIONS D Battery Switch D Load Switch PowerPAKr SO-8
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Si7947DP
Si7947DP-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.053 @ VGS = 10 V 4.9 0.075 @ VGS = 4.5 V 4.1 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 D1 S2 SO-8
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Si4532ADY
Si4532ADY-T1
70any
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 Ordering Information: Si4947ADY
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Si4947ADY
Si4947ADY-T1
10any
18-Jul-08
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74153 pin diagram
Abstract: CAPACITOR 2200uf 450V VISHAY DATE CODE 88331 aluminum marking code capacitors 056 PSM-SI
Text: 056/057 PSM-SI Vishay BCcomponents Aluminum Capacitors Power Standard Miniature Snap-in FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Large types, minimized dimensions, cylindrical aluminum case, insulated with a blue sleeve
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EN130300
13-Oct-03
74153 pin diagram
CAPACITOR 2200uf 450V
VISHAY DATE CODE
88331
aluminum marking code capacitors
056 PSM-SI
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Untitled
Abstract: No abstract text available
Text: Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V
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Si4308DY
SO-14
Si4308DY-T1
08-Apr-05
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Si2302DS 2A
Abstract: No abstract text available
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302DS
S-32044--Rev.
13-Oct-03
Si2302DS 2A
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Untitled
Abstract: No abstract text available
Text: Si5404DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 7.2 0.045 @ VGS = 2.5 V 5.9 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AB XX Lot Traceability and Date Code S Part # Code Bottom View
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Si5404DC
Si5404DC-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4830DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
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Si4830DY
Si4830DY-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Si2301DS
O-236
OT-23)
Si2301DS-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUD70N02-03P Vishay Siliconix New Product N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0033 @ VGS = 10 V 39 0.0053 @ VGS = 4.5 V 31 APPLICATIONS VDS (V) 20 Drain Connected to Tab D D Synchronous Buck Converter - Low-Side
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SUD70N02-03P
O-252
SUD70N02-03P
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for High Efficiency D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY VDS V 30
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Si7860DP
07-mm
Si7860DP-T1
08-Apr-05
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SI3457BDV
Abstract: No abstract text available
Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 0.100 @ VGS = - 4.5 V - 3.7 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information: Si3457BDV-T1
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Si3457BDV
Si3457BDV-T1
S-31990--Rev.
13-Oct-03
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c5 marking code
Abstract: Si2315DS Si2315DS-T1
Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View
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Si2315DS
O-236
OT-23)
Si2315DS-T1
08-Apr-05
c5 marking code
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2N7002E
Abstract: 2N7002E-T1
Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage
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2N7002E
O-236
OT-23)
08-Apr-05
2N7002E
2N7002E-T1
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Si2315DS
Abstract: Si2315DS-T1
Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View
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Si2315DS
O-236
OT-23)
Si2315DS-T1
S-31990--Rev.
13-Oct-03
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Si3867DV-T1
Abstract: Si3867DV
Text: Si3867DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.051 @ VGS = - 4.5 V - 5.1 0.067 @ VGS = - 3.3 V - 4.5 0.100 @ VGS = - 2.5 V - 3.7 D TrenchFETr Power MOSFET D PWM Optimized APPLICATIONS D DC/DC
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Si3867DV
Si3867DV-T1
S-31988--Rev.
13-Oct-03
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