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    13N60C5 Search Results

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    13N60C5 Price and Stock

    IXYS Corporation IXKP13N60C5

    MOSFET N-CH 600V 13A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXKP13N60C5 Tube
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    IXYS Corporation IXKP13N60C5M

    MOSFET N-CH 600V 6.5A TO220ABFP
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    DigiKey IXKP13N60C5M Tube 50
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    • 100 $2.1266
    • 1000 $2.1266
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    New Advantage Corporation IXKP13N60C5M 450 1
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    • 100 $4.22
    • 1000 $3.94
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    IXYS Integrated Circuits Division IXKP13N60C5M

    MOSFET DIS.6.5A 600V N-CH PLUS220FP COOLMOS THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXKP13N60C5M 550
    • 1 $3.2527
    • 10 $3.2527
    • 100 $2.957
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    13N60C5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    13N60C5M O-220 20080310b PDF

    13n60c

    Abstract: 13n60
    Text: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original
    13N60C5 O-220 20090209c 13n60c 13n60 PDF

    MA660

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original
    13N60C5M O-220 MA660 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKH 13N60C5 IXKP 13N60C5 COOLMOS * Power MOSFET ID25 = 13 A VDSS = 600 V RDS on max = 0.3 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) TO-220 AB (IXKP) G D S Features MOSFET Symbol


    Original
    13N60C5 O-247 O-220 20080310a PDF

    13n60c

    Abstract: 13N60
    Text: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    13N60C5M O-220 20090209d 13n60c 13N60 PDF

    13N60

    Abstract: 13N60C5M
    Text: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    13N60C5M O-220 20080523c 13N60 13N60C5M PDF

    13N60C5

    Abstract: 13N60 13n60c
    Text: IXKH 13N60C5 IXKP 13N60C5 Advanced Technical Information ID25 = 13 A = 600 V VDSS RDS on max = 0.3 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)


    Original
    13N60C5 13N60C5 O-247 O-220 13N60 13n60c PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol


    Original
    13N60C5M O-220 20070704a PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


    Original
    13N60C5M O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original
    13N60C5M O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    13N60C5M O-220 20090209d PDF

    13N60

    Abstract: 13n60c5 13n60c L-14045
    Text: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB (IXKP) G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original
    13N60C5 O-220 20080523b 13N60 13n60c5 13n60c L-14045 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF