R0605250L1
Abstract: Premier Devices Germany
Text: Product Specification R0605250L1 Si Reverse, low current, 5 – 65 MHz, 25.2dB typ. Gain @ 65MHz, 135mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise
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R0605250L1
65MHz,
135mA
24VDC
65MHz
D-90441
R0605250L1
Premier Devices Germany
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DIN45004B
Abstract: R2005280L
Text: Product Specification R2005280L Si Reverse, low current, 5 – 200MHz, 28.2dB typ. Gain @ 200MHz, 135mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise
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R2005280L
200MHz,
135mA
24VDC
200MHz
D-90441
DIN45004B
R2005280L
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Untitled
Abstract: No abstract text available
Text: LX5510B InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 135mA total DC current with the nominal 3.3V bias. The LX5510B is available in a 16pin 3mmx3mm micro-lead package
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LX5510B
19dBm
64QAM,
54Mbps)
135mA
LX5510B
16pin
11b/g
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2012T6R8M Features Item Summary 6.8 H(±20%), 135mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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LB2012T6R8M
135mA,
3000pcs
96MHz
135mA
38MHz
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ofdm amplifier
Abstract: LX5510BLQ LX5510BLQ-TR
Text: LX5510B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 135mA total DC current with the nominal 3.3V bias.
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LX5510B
19dBm
64QAM,
54Mbps)
135mA
LX5510B
16pin
11b/g
45GHz
ofdm amplifier
LX5510BLQ
LX5510BLQ-TR
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Untitled
Abstract: No abstract text available
Text: Product Specification R825 Si Reverse, 5 – 85MHz, 25.4dB typ. Gain @ 85MHz, 135mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations
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85MHz,
135mA
24VDC
85MHz
D-90441
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Untitled
Abstract: No abstract text available
Text: Product Specification R0605300L Si Reverse, low current, 5 – 65MHz, 30.5dB typ. Gain @ 65MHz, 135mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise
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R0605300L
65MHz,
135mA
24VDC
D-90441
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HL6387TG
Abstract: No abstract text available
Text: Data Sheet HL6387TG AIGaInP Laser Diode 642nm/65mW Features: Outline • Visible light output: 642nm Typ. Optical output power: 60mW CW Single transverse mode Low operating current: 135mA Typ. Low operating voltage: 2.7V Max. Operating temperature: +50°C
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HL6387TG
642nm/65mW
642nm
135mA
HL6387TG
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T220K Features Item Summary 22 H(±10%), 135mA, 280mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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CB2012T220K
135mA,
280mA,
3000pcs
52MHz
135mA
280mA
16MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2016T330K Features Item Summary 33 H(±10%), 135mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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LBC2016T330K
135mA,
2000pcs
52MHz
135mA
14MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T220M Features Item Summary 22 H(±20%), 135mA, 280mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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CB2012T220M
135mA,
280mA,
3000pcs
52MHz
135mA
280mA
16MHz
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Untitled
Abstract: No abstract text available
Text: LX5510B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 135mA total DC current with the nominal 3.3V bias.
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LX5510B
45GHz
19dBm
135mA
19dBm
64QAM
54Mbps
LX5510B
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Untitled
Abstract: No abstract text available
Text: Product Specification R830 Si Reverse, 5 – 85MHz, 30.5dB typ. Gain @ 85MHz, 135mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations
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85MHz,
135mA
24VDC
D-90441
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R0605300L1
Abstract: No abstract text available
Text: Product Specification R0605300L1 Si Reverse, low current, 5 – 65MHz, 30.5dB typ. Gain @ 65MHz, 135mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise
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R0605300L1
65MHz,
135mA
24VDC
D-90441
R0605300L1
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Untitled
Abstract: No abstract text available
Text: LX5510B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 135mA total DC current with the nominal 3.3V bias.
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LX5510B
45GHz
19dBm
135mA
19dBm
64QAM
54Mbps
LX5510B
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N-150NS
Abstract: No abstract text available
Text: Cell Type N-150NS Specifications Nominal Capacity 135mAh Nominal Voltage 1.2V Standard Charging Current D d 4.5mA Charging Time above 48Hrs. Charge H Ambient Temperature ±0.3 H Dimensions of Bare Cell D d 28.5 1.122 ±0.012 11.5 ±0.2 0.453 ±0.008 5.5 0.217
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N-150NS
135mAh
48Hrs.
1000Hz)
N-150NS
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LX5510BCLQ
Abstract: No abstract text available
Text: LX5510B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 135mA total DC current with the nominal 3.3V bias.
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LX5510B
19dBm
64QAM,
54Mbps)
135mA
LX5510B
16pin
11b/g
45GHz
LX5510BCLQ
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Premier Devices Germany
Abstract: Premier Devices R0605250L
Text: Product Specification R0605250L Si Reverse, low current, 5 – 65 MHz, 25.2dB typ. Gain @ 65MHz, 135mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise
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R0605250L
65MHz,
135mA
24VDC
65MHz
D-90441
Premier Devices Germany
Premier Devices
R0605250L
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R0605300L
Abstract: No abstract text available
Text: Product Specification R0605300L Si Reverse, low current, 5 – 65MHz, 30.5dB typ. Gain @ 65MHz, 135mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise
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R0605300L
65MHz,
135mA
24VDC
D-90441
R0605300L
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2016T330M Features Item Summary 33 H(±20%), 135mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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LBC2016T330M
135mA,
2000pcs
52MHz
135mA
14MHz
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202F
Abstract: No abstract text available
Text: SC-.0.25 UNCONTROLLED DOCUMENT PART NUMBER REV. FL—SML5141 35 PRELIM INARY IN P / N / E L E C T R I C A L S P E C IF IC A T IO N S 5 .8 3 0 5 ,8 3 ——I 0 4 ,8 + 0 ,2 \ 12-16V DESIGN VOLTAGE VAC. OR VDC. CURRENT DRAW § DESIGN VOLTS 14V 135mA M.S.C.P. 0 DESIGN VOLTS
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SML5141
2-16V
135mA
5400N,
135mA
202F
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123456789
Abstract: No abstract text available
Text: E x te rn a l D im e n s io n s s.g 182.0*0.5 B.7 * 0 3 16 IS. 0*03 11 1.6 sT CZ3 in CD* rs i tn m ♦1 O ¿! JS -L O ' 135Max. LED/B/L 1.0 20.0MOX. CCFL.B/L o o
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Untitled
Abstract: No abstract text available
Text: Littelfuse Fuse Blocks and Clips For Various Diameter Fuses 0 ATO Fuse Clip RoHS P.C. Board Type ORDERING INFORMATION: .135MAX. Catalog Number Clip Material* Finish 100 057 Spring Brass Tin-plated 27" REF I REF. .44" REF. ♦ NOTE: #100 057 spring brass, tin-plated clips available for printed circuit board
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135MAX.
250VAC
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P8085AH
Abstract: TMP8085AP TMP8085AP-2 TMP8085 TMP8156P MPU85-9
Text: TO SHIBA TMP8085A TMP8085AP-2/TMP8085AHP-2 8-BIT MICROPROCESSOR 1. GENERAL DESCRIPTION The TMP8085AP-2/TMP8085AHP-2, hereafter on referred to as TMP8085A, is a 8 bit micro processing unit MPU . TMP8085A uses a multiplexed data bus. The address is split between the 8 bit address bus and the 8 bit data bus. The on-chip address latches of
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TMP8085A
TMP8085AP-2/TMP8085AHP-2
TMP8085AP-2/TMP8085AHP-2,
TMP8085A,
TMP8085A
TMP8155P-2/TMP8156P-2
TMP8085A.
200nSec)
TMP8085AP-2:
P8085AHP-2:
P8085AH
TMP8085AP
TMP8085AP-2
TMP8085
TMP8156P
MPU85-9
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