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    134 T31 Search Results

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    134 T31 Price and Stock

    Cal Test Electronics CT3134-S-2

    Test Plugs & Test Jacks DIY 4mm Sheath Jack Solder Red
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    Mouser Electronics CT3134-S-2 255
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    Cal Test Electronics CT3134-0

    Test Plugs & Test Jacks DIY 4mm Shth Jack Black
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    Mouser Electronics CT3134-0 170
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    Cal Test Electronics CT3134-9

    Test Plugs & Test Jacks DIY 4mm Shth Jack White
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    Mouser Electronics CT3134-9 96
    • 1 $4.6
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    Cal Test Electronics CT3134-S-0

    Test Plugs & Test Jacks DIY 4mm Sheath Jack Solder Black
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    Mouser Electronics CT3134-S-0 47
    • 1 $3.45
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    Cal Test Electronics CT3134-5

    Test Plugs & Test Jacks DIY 4mm Shth Jack Green
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    Mouser Electronics CT3134-5 18
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    134 T31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AIT330S

    Abstract: PRS64G SA-12E CMOS-6SF
    Text: â IBM Packet Routing Switch PRS64G Datasheet â 0.1 Copyright and Disclaimer  Copyright International Business Machines Corporation 2000. All Rights Reserved Printed in the United States of America August 2000 The following are trademarks of International Business Machines Corporation in the United States, or other countries,


    Original     		PDF PRS64G PRS28 PRS64G IBM32SW0640DSLCDA250 PRS64G. AIT330S SA-12E CMOS-6SF

    T612M-DS

    Abstract: brake fluid sae 1703 AS81531 T612M-DS-PRINTER TTDS-019 T408M-PRINTER Mil-Std-202F 215j sae J SAE J 1703
    Text: www.tycoident.com Document number: TTDS-019 Issue: 3 Date: April 2004 TECHNICAL DATA SHEET RPS heat-shrinkable sleeves MATERIAL DESCRIPTION: Thin wall, flame retarded radiation cross-linked polyolefin heat-shrinkable tubing, assembled as organized cut sleeves in a “ladder” configuration. 3:1


    Original     		PDF TTDS-019 LQ870, AM6310, 1892BK04-RIBBON T312M-PRINTER, TMS-101-RIBBON-4RPSCE T408M-ndependently T612M-DS brake fluid sae 1703 AS81531 T612M-DS-PRINTER T408M-PRINTER Mil-Std-202F 215j sae J SAE J 1703

    KL SN 102 94v

    Abstract: wire T568 SCV64 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535
    Text: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / • bSflfllDl Q[ D24A0 134 ■ This Material Copyrighted By Its Respective Manufacturer T h e in fo rm a tio n in th is d o c u m e n t is su b je c t to c h a n g e w ith o u t n o tic e an d sh o u ld n o t be c o n stru ed as a


    OCR Scan     		PDF SCV64 024fl0 SCV64 288-pin CA91C078-X CA91C078 b5flfll01 KL SN 102 94v wire T568 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535

    AVANTEK transistor

    Abstract: No abstract text available
    Text: AVANTEK INC EOE D im iU L . avan tek data sheet OQObâMc? b ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 C T31-2S Avantek Chip Outline Features • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA


    OCR Scan     		PDF ATF-10100 T31-2S AVANTEK transistor

    "Philips Semiconductors" DO-35

    Abstract: No abstract text available
    Text: bSE » • 711002h DDbaElR T31 ■ P H I N Philips Preliminary specification Silicon bi-directional trigger device 1 PHILIPS INTERNATIONAL DESCRIPTION BR100/05 ^ ^ ^ ■ QUICK REFER EN CE DATA Silicon bi-directional trigger device


    OCR Scan     		PDF 711002h BR100/05 DO-35) MLA372 MLAB64 711DflSb ULM74 1-85L "Philips Semiconductors" DO-35

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors b tS S *!? ! 0032314 T31 M APX Product specification CATV amplifier module BGD108 N amER PHILIPS/DISCRETE FEATURES PINNING - SOT115C • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common


    OCR Scan     		PDF BGD108 OT115C 46dBmV;

    amplifier 446 mhz

    Abstract: BGD108
    Text: Philips Semiconductors b tiS S * !? ! 0032314 T31 M APX Product specification BGD108 CATV amplifier module N A^ER P H I L I P S / D I S C R E T E PINNING -SOT115C FEATURES • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction


    OCR Scan     		PDF 0G32314 BGD108 PINNING-SOT115C MSB004 46dBmV; amplifier 446 mhz BGD108

    Rf Detectors

    Abstract: tSA401 BA481 noise diode mixer diode KMW450 BB533
    Text: N AMER PHILIPS/DISCRETE b*ÌE D m b b S 3 T31 DDEblb? 07 S BiAPX BA4Ö 1 A U.H.F. MIXER DIODE S ilico n epitaxial S c h o ttk y -b a rrie r diode in a DO -34 envelope and intended fo r m ixe r applica tio n s in u .h .f. tuners, t.v. m odulators and r.f. detectors.


    OCR Scan     		PDF tSA401 DO-34 OD-68 DO-34) 7Z83041 BA481 Rf Detectors tSA401 noise diode mixer diode KMW450 BB533

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    32khz crystal oscillator

    Abstract: No abstract text available
    Text: Section 13 H8/3814 Series Electrical Characteristics 13.1 H8/3814 Series Absolute Maximum Ratings Table 13-1 lists the absolute maximum ratings. Table 13-1 Absolute Maximum Ratings Item Symbol Value Unit Power supply voltage Vcc -0 .3 to +7.0 V Analog power supply voltage


    OCR Scan     		PDF H8/3814 00bl7GS 00bl707 00bl70Ã 44Tb2G4 32khz crystal oscillator

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p

    Untitled

    Abstract: No abstract text available
    Text: PBYR2535CT PBYR2540CT PBYR2545CT B S E D B tjbS 3 T31 0033^77 S B N AMER PHILIPS/DISCRETE SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES 7^ <33-/9 Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in switched-mode


    OCR Scan     		PDF PBYR2535CT PBYR2540CT PBYR2545CT T-03-19 bbS3T31

    BFU309

    Abstract: No abstract text available
    Text: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections


    OCR Scan     		PDF BFU308/309/310 MSB032 MBB114 PINNING-TO-18 00E3b b53T31 BFU309

    T120 Switch

    Abstract: BUK457-450B T0220AB FBR1
    Text: N AMER PHILIPS/DISCRETE m S5 E D bia5 3 T31 0 0 E0 5 S0 3 • PowerMOS transistor BUK457-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF biaS3T31 00205S0 BUK457-450B T120 Switch BUK457-450B T0220AB FBR1

    TRANSISTOR C 4460

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR c 5578 SOT173 BFP90A 1702 NPN transistor IN 5408 ZG TRANSISTOR D 471 1346 transistor c 3421 transistor
    Text: P h jJ jP ^ e m jç o n d u c to r^ ^ bbS 3 T31 □Q 3 1 4 b eì T 3E M APX Product specification NPN 5 GHz wideband transistor BFP90A H DESCRIPTION A f lE R p H I L I p S / ] > IS < ; R E ; TE: bTE PINNING NPN transistor in hermetically sealed, sub-miniature


    OCR Scan     		PDF OT173 OT173X BFP90A OT173. OT173X. TRANSISTOR C 4460 RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR c 5578 SOT173 BFP90A 1702 NPN transistor IN 5408 ZG TRANSISTOR D 471 1346 transistor c 3421 transistor

    marking t17

    Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
    Text: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3


    OCR Scan     		PDF OT-89A DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 DZ89-C6V8 DZ89-C7V5 DZ89-C8V2 marking t17 ZENER 89A T29 marking DZ89-C51 T20 MARKING

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC EOE D AVANTEK • lim u h AT-60510 Up to 6 GHz Low Noise . Silicon Bipolar Transistor • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz 7.5 dB typical at 4.0 GHz


    OCR Scan     		PDF AT-60510

    DZ89-C91

    Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
    Text: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £


    OCR Scan     		PDF -C100 -C120 -C180 OT-89A DZ89-C43 DZ89-C47 DZ89-C51 DZ89-C56 DZ89-C62 DZ89-C68 DZ89-C91 c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking

    transistor f423

    Abstract: F423 Philips F423 F423 transistor BF423 philips BF423 BF420 BF421 BF422 F-423
    Text: BF421 _ i V _ P HILI P S I N T E R N A T I O N A L 5bE D • ¿ F423 7 1 1 0 0 2 b 0 0 4 21 b 2 42S « P H I N SILICON EPITAXIAL TRANSISTORS T -J /-2 3 P-N-P transistors in plastic TO-92 envelope primarily intended for class-B video output stages in


    OCR Scan     		PDF BF421 711002b 00421b2 BF420 BF422. BF421 BF423 7Z77434 transistor f423 F423 Philips F423 F423 transistor BF423 philips BF422 F-423

    transistor SOT103 mosfet

    Abstract: BF902
    Text: PHILIPS INTERNATIONAL 41E D 7 1 1D f l 2 b GQEbô' IS IPHIN T-31-25 Philips Sem iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES BF902 QUICK REFERENCE DATA • Short channel transistor with high ratio IY,3I:CI3 • Low noise gain-controlled


    OCR Scan     		PDF T-31-25 BF902 transistor SOT103 mosfet BF902

    SOT103

    Abstract: transistor SOT103 mosfet BF902 marking C1s philips mosfet
    Text: P H ILIP S INTER NATIONAL 41E D B 7110â2b OQEtfl'ÎS T « ¡P H IN T-31-25 Philips S em iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES • • BF902 QUICK REFERENCE DATA Short channel transistor with high ratio IYtsl:Cls


    OCR Scan     		PDF T-31-25 BF902 -SOT103 SOT103 transistor SOT103 mosfet BF902 marking C1s philips mosfet

    capacitor 400 MKT philips

    Abstract: capacitor MKT Philips BLF378 MCA976 capacitor 250 mkt philips 2222371-11105 BR 78L05 PHILIPS MKT CAPACITOR 78L05 C4C31
    Text: Philips Semiconductors bbS3 T31 GD3 0 Ü7 S 715 APX Product specification VHF push-pull power MOS transistor BLF378 N AMER PHILIPS/DISCRETE blE T> — PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan     		PDF 03DD7fi BLF378 OT262A1 MCA982 capacitor 400 MKT philips capacitor MKT Philips BLF378 MCA976 capacitor 250 mkt philips 2222371-11105 BR 78L05 PHILIPS MKT CAPACITOR 78L05 C4C31

    B41 diode smd

    Abstract: smd diode marking 2H smd diode M4 smd diode a7 2bcj smd diode code A7 smd marking m4 BAV99W DIODE smd marking M4 DIODE smd marking A7
    Text: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 OOSb'ni Philips Semiconductors b41 * A P X Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAV99W QUICK REFERENCE DATA


    OCR Scan     		PDF BAV99W OT323 B41 diode smd smd diode marking 2H smd diode M4 smd diode a7 2bcj smd diode code A7 smd marking m4 BAV99W DIODE smd marking M4 DIODE smd marking A7

    AVANTEK transistor

    Abstract: ATF-13136-TR1
    Text: A V A N T E K INC EOE D AVANTEK i m m 0GQb54b 2 ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features Avantek 36 mlcro-X Package1 • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB


    OCR Scan     		PDF 0GQb54b ATF-13136 AVANTEK transistor ATF-13136-TR1