9713
Abstract: W24L11 W24L11-70L W24L11-70LL W24L11Q-70LL W24L11S-70L W24L11S-70LL W24L11T-70L W24L11T-70LL
Text: Preliminary W24L11 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24L11 is a normal-speed, very low-power CMOS static RAM organized as 131072 × 8 bits that operates on a wide voltage range from 3.0V to 3.6V power supply. This device is manufactured using
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W24L11
W24L11
9713
W24L11-70L
W24L11-70LL
W24L11Q-70LL
W24L11S-70L
W24L11S-70LL
W24L11T-70L
W24L11T-70LL
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LE28C1001M
Abstract: LE28C1001T TSOP32
Text: Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG 131072 words x 8 bits Flash Memory Preliminary Overview Package Dimensions The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS
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LE28C1001M,
T-90/12/15
131072-word
128-byte
3205-SOP32
LE28C1001M]
LE28C1001M
LE28C1001T
TSOP32
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GR12883
Abstract: No abstract text available
Text: GR12883 Page 1 of 2 GR12883 DESCRIPTION The GR12883 is a 131072 word by 8 bits 128K x 8 non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.The power down circuit is fully automatic and is referenced at 4.5 volts. At this point the GR12883 is write protected by an internal
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GR12883
GR12883
GR1288rnal
\www1\gr12883
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555H
Abstract: MX29F200B MX29F200T
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
555H
MX29F200B
MX29F200T
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W24010-70LL
Abstract: W24010 W24010S-70LL W24010T-70LL W24010U-70LL W24010V-70LL
Text: W24010/LL 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24010 is a normal-speed, very low-power CMOS static RAM organized as 131072 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.
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W24010/LL
W24010
32-pin
W24010-70LL
W24010S-70LL
W24010T-70LL
W24010U-70LL
W24010V-70LL
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tr8c
Abstract: TMS28F200
Text: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture
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TMS28F20
TMS28F200BZB
8-BIT/131072
16-BIT
96K-Byte
128K-Byte
16K-Byte
28F200B2x70
28F200BZX80
28F200BZX90
tr8c
TMS28F200
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581000P
Abstract: CXK581
Text: SONY» C X K 5 8 1 0 0 0 P / M -10L/12L/15L -10LL712LL/15LL 131072-word X 8-bit High Speed CMOS Static RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this
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-10L/12L/15L
-10LL712LL/15LL
131072-word
CXK581000P/M
CXK581000P/M-10L/1OLL
100ns
CXK581000P/M-12L/12LL
120ns
CXK581000P/M-15L/15LL
150ns
581000P
CXK581
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENì% 5084 _ CMOS LSI _ LC322270J. M-80 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions T he LC 322270J, M is a CM O S dynam ic RAM operating
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LC322270J.
322270J,
LC322270J,
A02925
A02926
A0292S
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data sw 3205
Abstract: No abstract text available
Text: Ordering number : EN JK4711 CMOS LSI LC338128P, M, PL, ML-7Q/8o7fÖ 1 MEG 131072 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC338128 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized
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JK4711
LC338128P,
LC338128
32-pin
ML-70/8Q/10
data sw 3205
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Untitled
Abstract: No abstract text available
Text: I Ordering number : EN%5085 _ CMOS LSI LC322271J, M-8Ò 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions The LC322271J, M is a CMOS dynamic RAM operating on a single 5 V power source and having a 131072 words
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LC322271J,
40-pin
LA0292B
A02926
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DIP32
Abstract: LC371100SP SM-10 SANYO DL
Text: I Ordering number : ENÎ8 50B7A CMOS LSI No. 5K 5087A SAMYO LC371100SP, SM-10/LC37110OSP, SM-20LV 1 MEG 131072 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371100SP, SM-10 and LC371100SP, SM-20LV are 1048576-b it M ask Program m able Read Only
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50B7A
LC371100SP,
SM-10/LC37110OSP,
SM-20LV
SM-10
SM-20LV
1048576-bit
DIP32
LC371100SP
SANYO DL
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Untitled
Abstract: No abstract text available
Text: TMS28F010B 131072 by 8-err FLASH MEMORY SMJS824B - MAY 1995 - REVISED AUGUST 1997 • • • • • • • • Organization . . . 131072 by 8 Bits Pin Compatible With Existing 1-Megabit EPROMs Vqc Tolerance ±10% All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time
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TMS28F010B
SMJS824B
28F010B-90
28F010B-10
28F010B-12
28F010B-15
168-Hour
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Untitled
Abstract: No abstract text available
Text: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the
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HN27C301P/FP
131072-word
HN27C301P
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Untitled
Abstract: No abstract text available
Text: HM66204 S x 8-bit High Density CMOS Static RAM Module The HM66204 m odule was designed for pinout and signal compatibility with the HM628128 128K x 8 Monolithic Device. This device is now obsolete and no longer in manufacture.
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HM66204
------------------------------131072-word
HM628128
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A13G
Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
Text: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and
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CXK5T81OOOATN/AYN
131072-word
CXK5T81
131072-words
-10LLX
-12LLX
-10LLX
100ns
A13G
CXK5T81000ATN
CXK5T81000AYN
5 pin A13E
power supply circuit 24v ac to 3.6v dc
mcoe
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Untitled
Abstract: No abstract text available
Text: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL
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HM62W8128
131072-Word
8128LP-10
8128LP-12
8128LP-1O
LP-12
8128LFP-10
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Untitled
Abstract: No abstract text available
Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS
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HM62W8127H
HM62W9127H
131072-word
HM62W8127H/HM62W9127H
072-word
400-mil
32/36-pin
HM62W8127HJP/HLJP
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Untitled
Abstract: No abstract text available
Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350C Z Rev. 3.0 Nov. 19, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit
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HM628127HB
131072-word
ADE-203-350C
128-k
HM628127HB
400-mil
32-pin
HM628127HB-25
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628128
Abstract: No abstract text available
Text: A K M 628128 Series 131072-Word x 8-Bit High Speed CMOS Static RAM The A K M 628128 is a CMOS static RAM o rg anized 128- kword x 8-bit. It realizes higher density, higher p erfo rm ance and low p o w e r consum ption by em ploying 0 .8 |im H i-C M O S A K M 628128P Series
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131072-Word
628128P
6281eselect
628128
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7483 truth table
Abstract: Truth Table 7483 truth table for 7483 ci 7483
Text: W24L010A íinbond Electronics Corp. 128K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24L010A is a high speed, low power CMOS static RAM organized as 131072 x 8 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high
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W24L010A
W24L010A
32-pin
A0-A16
7483 truth table
Truth Table 7483
truth table for 7483
ci 7483
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Untitled
Abstract: No abstract text available
Text: « 6 I B W Ê Î j f t W231024 Winbond 128K X 8 MASK ROM DESCRIPTION FEATURES The W231024 is a High Speed Mask-Programm • Power Consumption : able Read-Only Memory Active : 175mW Typ. Organized as 131072 X 8 Bits and Operates on a Single • Access Time : 200/300 ns (Max.)
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W231024
175mW
W231024
B-1930
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Untitled
Abstract: No abstract text available
Text: W24010A l’inbond Electronics Corp. 128K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24010A is a high speed, low power CMOS static RAM organized as 131072 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high
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W24010A
W24010A
32-pin
CA95134
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Untitled
Abstract: No abstract text available
Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350B Z Rev. 2.0 Jun. 27, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit
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HM628127HB
131072-word
ADE-203-350B
128-k
400-mil
32-pin
HM628127HB-25
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Untitled
Abstract: No abstract text available
Text: HM62W8127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-414 A (Z) Preliminary Rev. 0.1 Jul. 18, 1996 Description The HM62W8127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process and high speed
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HM62W8127HB
131072-word
ADE-203-414
128-k
400-mil
32-pin
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