Q62702-S565
Abstract: E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23
Text: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565
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OT-23
Q62702-S565
Q67000-S229
E6327
E6433
Q62702-S565
E6327
Q67000-S229
marking BSs
marking SRs SOT
SRs SOT23
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16 sot 23
Abstract: BSS 130 marking SRs SOT E6327 Q62702-S565 Q67000-S229 marking BSs K3530
Text: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565
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OT-23
Q62702-S565
Q67000-S229
E6327
E6433
Sep-13-1996
16 sot 23
BSS 130
marking SRs SOT
E6327
Q62702-S565
Q67000-S229
marking BSs
K3530
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AN-131
Abstract: SCR Control
Text: APPLICATION NOTE AN-131 Handling MOS Devices AN-131-R02 AN-131 Static Discharge CMOS Latchup Metal Oxide Semiconductor MOS devices have gained broad acceptance in telecommunications. This includes use of n-channel (NMOS) transistors, p-channel (PMOS) transistors, or both
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AN-131
AN-131-R02
AN-131
SCR Control
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"Darlington Transistor"
Abstract: 131 Transistor darlington power transistor 2N6059 CP178
Text: Central TM PROCESS CP178 Power Transistor Semiconductor Corp. NPN Darlington Transistor PROCESS DETAILS Die Size 131 x 131 MILS Die Thickness 12.5 ±1.0 MILS Emitter Bonding Pad Area 27 x 36 MILS Base Bonding Pad Area 20 x 37 MILS Top Side Metalization Al - 50,000Å
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CP178
2N6059
"Darlington Transistor"
131 Transistor
darlington power transistor
2N6059
CP178
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ic iR light control
Abstract: No abstract text available
Text: RPI-131 External dimensions Unit : mm RPI-131 Photointerrupter, Small type 4.2 Through hole 3.2 4-φ 0.8 Absolute maximum ratings (Ta=25°C) 50 mA VR 5 V Power dissipation PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V
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RPI-131
ic iR light control
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LT140X1
Abstract: SIL101 hp g61 lcd block diagram silicon image SIL101 samsung lcd tv power supply diagrams S-II-10 2SK1059 2SK1339 SiI100 SiI101
Text: Preliminary TO : ELSA DATE : 97/11/11 SAMSUNG SAMSUNGTFT-LCD TFT-LCD MODEL MODEL NO. NO. : LT140X1-131 LT140X1-131 NOTE : The content of SPEC can be changed without notice Checked by : Assit. Mgr Agreed by : Mgr Senr. Mgr QA Prodt. Tec. Dev. Test PREPARED BY : AMLCD Application Engineering Group
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LT140X1-131
002-G-971028
LT140X1
SIL101
hp g61 lcd block diagram
silicon image SIL101
samsung lcd tv power supply diagrams
S-II-10
2SK1059
2SK1339
SiI100
SiI101
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transistor r1009
Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
Text: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02
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CTM805SVSERV
107-800455-4G
127-476042-0D
130-600101-0G
190-R63300-02
774-R63301-00
774-R63302-00
774-R63303-00
849-R63301-00
892-R63301-06
transistor r1009
ctv350s
ZD405
OPT601
r63302
ic902
TH901
q702 transistor
w17 transistor
philips carbon film resistor
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FL 210 transistor
Abstract: CTX210602
Text: TOP VIEW 2.54 REF 4 PLCS RECOMMENDED PCB PAD LAYOUT 2.54 (4 PLCS) 3.0 REF 21.0 MAX 1 10 2 3 10.16 REF 4 16.5 MAX 1.74 (7 PLCS) 6 5 0.584 SQ REF (7 PLCS) 8.42 11.9 21.0 28.7 26.0 MAX ELECTRICAL CHARACTERISTICS Turns ratio @ (10 - 2)/(3 - 2): 131 – 135 Turns ratio @ (10 - 2)/(2 - 1): 131 – 135
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CTX210602
FL 210 transistor
CTX210602
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TIP130
Abstract: TIP132 TIP131 NPN POWER DARLINGTON TRANSISTORS
Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP130/131/132 DESCRIPTION •With TO-220C package ·DARLINGTON ·Collector saturation voltage ·Complement to type TIP135/136/137 APPLICATIONS ·Designed for general-purpose amplifier
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TIP130/131/132
O-220C
TIP135/136/137
TIP130
TIP131
TIP132
100age
TIP130
TIP132
TIP131
NPN POWER DARLINGTON TRANSISTORS
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SMO-14
Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication
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MIL-S-19500A1B(
2N425
2Nb26
-AO07
SMO-14
SLG 2016 D
2SK26
2N42
N4 TAM
marking aaae
2n427
GERMANIUM SMALL SIGNAL TRANSISTORS
2N426
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TIP135
Abstract: TIP137 TIP136 tip137 equivalent Darlington 6A
Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP135/136/137 DESCRIPTION •With TO-220C package ·DARLINGTON ·Collector saturation voltage ·Complement to type TIP130/131/132 APPLICATIONS ·Designed for general-purpose amplifier
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TIP135/136/137
O-220C
TIP130/131/132
TIP135
TIP136
TIP137
TIP135
TIP137
TIP136
tip137 equivalent
Darlington 6A
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Untitled
Abstract: No abstract text available
Text: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 m max (@VGS = 1.8V) Ron = 87m (max) (@VGS = 2.5V)
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SSM3K302T
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TIP132
Abstract: TIP130 TIP135 TIP136 TIP137T npn darlington transistor 131 TIP131 TIP137
Text: TIP130/131/132 TIP135/136/137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n TIP131, TIP132, TIP135 AND TIP137 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in
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TIP130/131/132
TIP135/136/137
TIP131,
TIP132,
TIP135
TIP137
TIP130,
TIP131
TIP132
O-220
TIP130
TIP136
TIP137T
npn darlington transistor 131
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Untitled
Abstract: No abstract text available
Text: BSS 131 Infine on technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 2 Pin 1 G Pin 3 S Type Vbs fc ffDS(on) Package Marking BSS 131 240 V 0.1 A 16Î2 SOT-23 SRs Type BSS 131 BSS 131
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OT-23
Q62702-S565
Q67000-S229
E6327
E6433
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
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Untitled
Abstract: No abstract text available
Text: •I iT ! 43D5271 H A R G0S414D R DES IS HAS IRFF130/131/13 2/133 IRFF130R/131 R /132R/133R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2 0 5 A F • 7.0A and 8.0A, 80V - 100V • rDS on = 0.18 fl and 0 .2 5 fi • Single Pulse Avalanche Energy Rated*
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43D5271
G0S414D
IRFF130/131/13
IRFF130R/131
/132R/133R
IRFF13Q,
IRFF131,
IRFF132,
IRFF133
IRFF130R,
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BUK555-60A
Abstract: BUK555-60B T0220AB
Text: N AMER PHILIPS/DISCRETE b'îE D • ^53*131 0030005 t.S'ì « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level GENERAL DESCRIPTION N-chanrtel enhancement mode
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BUK555-60A/B
T0220AB
BUK555-60A
BUK555-60B
T0220AB
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TRANSISTOR SMD CODE B7
Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
Text: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.
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PMBT3906
PMBT3906
TRANSISTOR SMD CODE B7
TRANSISTOR SMD MARKING CODE B7
transistor smd marking JT
smd transistor kn
transistor p2a
smd TRANSISTOR code b7
MARKING CODE SMD IC
smd transistor marking PA
K TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE
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BUK657-500B
Abstract: T0220AB transistor D 587
Text: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK657-500B
T0220AB
transistor D 587
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^53*131 0031743 341 • APX PNP 1 GHz video transistors ^ Product specification BFQ255; BFQ255A N AMER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ255;
BFQ255A
O-202)
BFQ235
BFQ235A
0Q317MA
UBB688
bb53T31
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k 246 transistor fet
Abstract: 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120
Text: N AMER PHILIPS/DISCRETE SSE D • ^53=131 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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BUK637-600A
BUK637-600B
BUK637-600C
BUK637
-600A
-600B
-600C
k 246 transistor fet
4428A
BUK637-600A
BUK637-600B
BUK637-600C
SE120
SE-120
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Untitled
Abstract: No abstract text available
Text: [ t ^^53= 131 DEVELOPMENT DATA Q D lflflh ? This data sheat contains advance Information and specifications are subject to change w ithout notice. _ Q A BUT131 SERIES T - 33-/3 N AUER PHILIPS/DISCRETE 5SE I> SILICON DIFFUSED POWER TRANSISTORS
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BUT131
aTO-220
BUT131
T-33-13
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BUK637-400A
Abstract: BUK637-400B P02S
Text: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable
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BUK637-400A
BUK637-400B
BUK637
-400A
-400B
BUK637-400B
P02S
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M IM IiLIO TIlM C t TI P130/131/132 TIPI 35/136/137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP131, TIP132.TIP135 ANDTIP137 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN
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P130/131/132
TIP131,
TIP132
TIP135
ANDTIP137
TIP130,
TIP131
O-220
TIP135,
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pir 500b
Abstract: No abstract text available
Text: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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Q020b6Q
BUK637-500A
BUK637-500B
BUK637-500C
31-is*
BUK637
bb53T31
0020bfl4
pir 500b
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