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    13009 SILICON Search Results

    13009 SILICON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    5962-8757701RA Renesas Electronics Corporation Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon Visit Renesas Electronics Corporation
    HXT45430-DNU Renesas Electronics Corporation 112Gb/s PAM4 Silicon Photonic Modulator Driver Visit Renesas Electronics Corporation

    13009 SILICON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    e13009

    Abstract: Fairchild e13009 transistor E 13009 E13009 F e 13009 f e13008 E-13009 fairchild e13009 application E13009 2 fairchild 13009
    Text: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSE13008/13009 O-220 KSE13008 KSE13009 e13009 Fairchild e13009 transistor E 13009 E13009 F e 13009 f e13008 E-13009 fairchild e13009 application E13009 2 fairchild 13009 PDF

    mje13008

    Abstract: tr 13009 13009 MJE13009 fairchild semiconductor
    Text: MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    MJE13008/13009 O-220 MJE13008 MJE13009 mje13008 tr 13009 13009 MJE13009 fairchild semiconductor PDF

    13009

    Abstract: tr 13009 13009 H transistor 13009 KSE13009 kse13009 h2 all transistor 13009 p 13009 kse13008 transistor d 13009
    Text: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSE13008/13009 O-220 KSE13008 KSE13009 13009 tr 13009 13009 H transistor 13009 KSE13009 kse13009 h2 all transistor 13009 p 13009 kse13008 transistor d 13009 PDF

    MJE13008

    Abstract: 13009
    Text: MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    MJE13008/13009 O-220 MJE13008 MJE13009 MJE13008 13009 PDF

    *E13009F

    Abstract: tr 13009 all transistor 13009 transistor 13009 p 13009 13009 NPN Transistor KSE13009FTU 13009 cross reference 13009 13009 TRANSISTOR
    Text: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSE13008/13009 O-220 KSE13008 KSE13009 O-220F KSE13009FTU *E13009F tr 13009 all transistor 13009 transistor 13009 p 13009 13009 NPN Transistor 13009 cross reference 13009 13009 TRANSISTOR PDF

    13009

    Abstract: SWITCHING SYSTEMS INTERNATIONAL Kse13009
    Text: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSE13008/13009 O-220 KSE13008 KSE13009 KSE13009 13009 SWITCHING SYSTEMS INTERNATIONAL PDF

    transistor 13009

    Abstract: kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009 KSE13009
    Text: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSE13008/13009 O-220 KSE13008 KSE13009 KSE13009H2 KSE13009H2TU transistor 13009 kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009 PDF

    all transistor 13009

    Abstract: transistor 13009 13009 13009 TRANSISTOR equivalent 13009 TRANSISTOR transistor switch 13009 npn 13009 13009 H 13009 NPN Transistor 13009 silicon
    Text: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008


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    KSE13008/13009 O-220 KSE13008 KSE13009 all transistor 13009 transistor 13009 13009 13009 TRANSISTOR equivalent 13009 TRANSISTOR transistor switch 13009 npn 13009 13009 H 13009 NPN Transistor 13009 silicon PDF

    Untitled

    Abstract: No abstract text available
    Text: KSM13008/13009 TO-220 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1.Base NPN Silicon Transisor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO


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    KSM13008/13009 O-220 KSM13008 KSM13009 T/13009 95MAX. PDF

    transistor 13009

    Abstract: transistor E 13009 13009 TRANSISTOR e 13009 f transistor E 13009 2 13009 KSE13009HE13009 d423a e 13009 l HE13009
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13009 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:D423AG-00 芯片厚度:240±20µm 管芯尺寸:4230x4230µm 2 焊位尺寸:B 极 1200×420µm 2,E 极 1140×540µm 2


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    100mm D423AG-00 KSE13009HE13009 O-220 10mAIB 12AIB 10VIC 125VIC transistor 13009 transistor E 13009 13009 TRANSISTOR e 13009 f transistor E 13009 2 13009 KSE13009HE13009 d423a e 13009 l HE13009 PDF

    transistor MJ 13009

    Abstract: E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
    Text: HI-SINCERITY Spec. No. : HR200202 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description The HMJE13009R is designed for high-voltage, high-speed power switching


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    HR200202 HMJE13009R HMJE13009R O-247 120ns Collector-Emitt120 183oC 217oC 260oC transistor MJ 13009 E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009 PDF

    E 13009

    Abstract: transistor MJ 13009 e13009 transistor E 13009 mj 13009 transistor d 13009 D 13009 K J 13009 - 2 tr 13009 j 13009
    Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.16 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


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    HE200206 HMJE13009 HMJE13009 O-220AB 120ns 183oC 217oC 260oC E 13009 transistor MJ 13009 e13009 transistor E 13009 mj 13009 transistor d 13009 D 13009 K J 13009 - 2 tr 13009 j 13009 PDF

    transistor E 13009

    Abstract: all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR 13009 2 transistor D 13009 npn 13009
    Text: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Rating Unit VcBO


    OCR Scan
    KSE13008/13009 KSE13008 KSE13009 transistor E 13009 all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR 13009 2 transistor D 13009 npn 13009 PDF

    transistor E 13009

    Abstract: D 13009 K E13009 transistor 13009 transistor b 595 transistor d 13009 E 13009 L e 13009 f J 13009 - 2 E 13009 2
    Text: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Rating Symbol Unit : K S E 1 3008 VcBO


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    KSE13008/13009 KSE13009 KSE13008 transistor E 13009 D 13009 K E13009 transistor 13009 transistor b 595 transistor d 13009 E 13009 L e 13009 f J 13009 - 2 E 13009 2 PDF

    e 13009 d

    Abstract: transistor E 13009 transistor E 13009 l E 13009 2
    Text: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : : C ollector Em itter Voltage:


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    KSE13008/13009 KSE13008 KSE13009 e 13009 d transistor E 13009 transistor E 13009 l E 13009 2 PDF

    transistor E 13009

    Abstract: transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L p 13009 e 13009 f e13009 transistor E 13009 l
    Text: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : K S E 13008 : KSE13009 Collector Emitter Voltage: KSE13008


    OCR Scan
    KSE13008/13009 O-220 KSE13009 KSE13008 transistor E 13009 transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L p 13009 e 13009 f e13009 transistor E 13009 l PDF

    D 13009 K

    Abstract: e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications
    Text: TELEFUNKEN ELECTRONIC 1 ?E ]> • a^SOCHb OOO'ifc.M1} 0 TE 13008- TE 13009 T m iilF ty ilfiK lK l e le c tro n ic C rut*« Technotogw* r - 35-13 Silicon NPN Power Transistors Applications: Switching mode power supply, motor control and electronic ballast Features:


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    500mA VCB-10V D 13009 K e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications PDF

    13009 silicon

    Abstract: 13009 TRANSISTOR MJE-13009 transistor 13009 EB 13009 13009 L T 13009 MJE13009 transistor MJE13009
    Text: rZ Z S G S -T H O M S O N * 7# » i» !© « ! M JE 13009 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTVPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec T0-220 plastic package, intended for use in motor controls,


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    MJE13009 T0-220 O-220 300ns, MJE13009 13009 silicon 13009 TRANSISTOR MJE-13009 transistor 13009 EB 13009 13009 L T 13009 transistor MJE13009 PDF

    PHE13009

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The P H E 13009 is a silicon npn pow er sw itching tra n sisto r in the T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control system s,


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    PHE13009 PHE13009 PDF

    E 13009 2

    Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
    Text: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use


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    aS3T31 O-220 MJE13008 bb53131 E 13009 2 transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l PDF

    transistor E 13009

    Abstract: transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR
    Text: i r ^53^31 D O n iS ? 1 D E V EL O P M EN T DATA MJE 13008 MJE 13009 This data she« contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E ESE D -r-3 3 -1 3 SILICON DIFFUSED POWER TRAN SISTO RS


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    bfci53T31 f-33-13 T0-220 MJE13008 june1988 T-33-13 transistor E 13009 transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR PDF

    SR 13009

    Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2
    Text: Tem ic TE13008 TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits


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    TE13008 TE13009 SR 13009 E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2 PDF

    transistor E 13009

    Abstract: transistor d 13009 n752 E13009 E 13009 J 13009 - 2 E 13009 TRANSISTOR motorola e 13009 p D 13009 K e 13009 l
    Text: MOTOROLA SC XSTRS/R 1 S E 0 I ti3ti725M 0 G Ö 5 4 0 3 F r - MOTOROLA TECHNICAL DATA e s i g n e r s 3 * - / 3 MJE13008 MJE13009 SEMICONDUCTOR D 3 | D a t a . S h e e t 12 A M P E R E NPN SILICON POWER TRANSISTORS 3 0 0 and 4 0 0 V O L T S 100 W A T T S SWITCHMODE SE R IE S


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    ti3ti725M MJE13008 MJE13009 transistor E 13009 transistor d 13009 n752 E13009 E 13009 J 13009 - 2 E 13009 TRANSISTOR motorola e 13009 p D 13009 K e 13009 l PDF

    e13009

    Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


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    MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data PDF