jrc 5532
Abstract: jrc 5534 as4558 audio amplifier 4558 12v electronic transformer RECTIFIER 5532 JRC 4558 JRC JRC4558 bridge rectifier 12V 1A jrc 4558
Text: NIEC’s SBD and FRED for Audio Nihon Inter Electronics Corporation NIEC is a major manufacturer of Schottky Barrier Diode (SBD) and Fast Recovery Epitaxial Diode (FRED). Thanks to low dissipation, fast switching, and low noise characteristics, these fast switching diodes are widely used in Switching Mode Power Supply (SMPS) all over the
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FSQ05A04
jrc 5532
jrc 5534
as4558
audio amplifier 4558
12v electronic transformer RECTIFIER
5532 JRC
4558 JRC
JRC4558
bridge rectifier 12V 1A
jrc 4558
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ISL9H2060EG3
Abstract: LD26
Text: ISL9H2060EG3 Data Sheet January 2002 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge LGC SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and avalanche
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ISL9H2060EG3
ISL9H2060EG3
LD26
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Untitled
Abstract: No abstract text available
Text: PD - 95355A IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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5355A
IRFR15N20DPbF
IRFU15N20DPbF
AN1001)
IRFR15N20D
IRFU15N20D
AN-994.
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IRF MOSFET 10A P
Abstract: IRF P CHANNEL MOSFET 10A 100V IRF 10A IRF P CHANNEL MOSFET 100v MOSFET 150 N IRF power Diode 200V 10A 12v 10A regulator IRF AN1001 AN1001 EIA-541
Text: PD - 95355A IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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5355A
IRFR15N20DPbF
IRFU15N20DPbF
AN1001)
IRFR15N20D
IRFU15N20D
AN-994.
IRF MOSFET 10A P
IRF P CHANNEL MOSFET 10A 100V
IRF 10A
IRF P CHANNEL MOSFET 100v
MOSFET 150 N IRF
power Diode 200V 10A
12v 10A regulator
IRF AN1001
AN1001
EIA-541
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Untitled
Abstract: No abstract text available
Text: PD - 95355A IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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5355A
IRFR15N20DPbF
IRFU15N20DPbF
AN1001)
IRFR15N20D
IRFU15N20D
AN-994.
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ISL9H2060EG3
Abstract: LD26 igbt 400V 20A
Text: ISL9H2060EG3 Data Sheet Title L9 060 3 bjec 0V, MPS LGC ries ann BT h tialle 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge LGC) SMPS II IGBT combining the fast switching speed of the SMPS
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ISL9H2060EG3
ISL9H2060EG3
LD26
igbt 400V 20A
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Untitled
Abstract: No abstract text available
Text: PD - 95355 IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRFR15N20DPbF
IRFU15N20DPbF
AN1001)
IRFR15N20D
IRFU15N20D
AN-994.
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20n60a4d
Abstract: TA49372 20N60A4 HGTG*N60A4D TA49341 HGTG20N60A4D LD26 TA49339 HGTG
Text: HGTG20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG20N60A4D
HGTG20N60A4D
150oC.
TA49339.
TA49372.
20n60a4d
TA49372
20N60A4
HGTG*N60A4D
TA49341
LD26
TA49339
HGTG
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HGTG20N60A4D
Abstract: No abstract text available
Text: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG20N60A4D
HGTG20N60A4D
150oC.
TA49339.
TA49372.
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20N60A4D
Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247
Text: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG20N60A4D
HGTG20N60A4D
150oC.
TA49339.
TA49372.
20N60A4D
20N60A4
TA49341
TA49339
TA49372
IFM110
LD26
TO247
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20N60A4D
Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49372 mosfet 20a 300v P channel 600v 20a IGBT LD26 TA49339
Text: HGTG20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG20N60A4D
HGTG20N60A4D
150oC.
TA49339.
TA49372.
20N60A4D
20N60A4
TA49341
TA49372
mosfet 20a 300v
P channel 600v 20a IGBT
LD26
TA49339
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20n60a4d
Abstract: HGTG20N60A4D TA49372
Text: HGTG20N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG20N60A4D
HGTG20N60A4D
150oC.
TA49339.
TA49372.
20n60a4d
TA49372
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20N60A4D
Abstract: 20N60A4 TA49372 HGTG20N60A4D 20n60 20N60A HGT4E20N60A4DS TA49339 TA49341 HGTG*N60A4D
Text: HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGTG20N60A4D,
HGT4E20N60A4DS
150oC.
TA49339.
TA49372.
20N60A4D
20N60A4
TA49372
HGTG20N60A4D
20n60
20N60A
HGT4E20N60A4DS
TA49339
TA49341
HGTG*N60A4D
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Untitled
Abstract: No abstract text available
Text: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRFR15N20D
IRFU15N20D
AN1001)
AN-994.
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IRF MOSFET 100A 200v
Abstract: AN1001 IRFR120 IRFR15N20D IRFU120 IRFU15N20D U120
Text: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRFR15N20D
IRFU15N20D
AN1001)
AN-994.
IRF MOSFET 100A 200v
AN1001
IRFR120
IRFR15N20D
IRFU120
IRFU15N20D
U120
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EIA-541
Abstract: IRF7470 MS-012AA
Text: PD- 93913D IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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93913D
IRF7470
EIA-481
EIA-541.
EIA-541
IRF7470
MS-012AA
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Abstract: No abstract text available
Text: PD- 95276 IRF7470PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification l Lead-Free VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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IRF7470PbF
EIA-481
EIA-541.
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IRF7470PBF
Abstract: EIA-541 F7101 IRF7101
Text: PD- 95276 IRF7470PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification l Lead-Free VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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IRF7470PbF
EIA-481
EIA-541.
IRF7470PBF
EIA-541
F7101
IRF7101
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IRF7470
Abstract: No abstract text available
Text: PD- 93913C IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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93913C
IRF7470
IA-48
IRF7470
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Untitled
Abstract: No abstract text available
Text: PD- 93913B IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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93913B
IRF7470
D52-7105
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IRFB18N50KPBF
Abstract: diode 17a 400v
Text: SMPS MOSFET PD - 95472A IRFB18N50KPbF Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.26Ω 17A
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5472A
IRFB18N50KPbF
O-220AB
O-220AB
IRFB18N50KPBF
diode 17a 400v
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APW7159A
Abstract: APW7159
Text: APW7159A Dual Channel Synchronous Buck PWM Controller for SMPS Features General Description • • The APW7159A is a dual channel voltage mode and syn- Single 12V Power Supply Required Excellent Output Voltage Regulation chronous PWM controller which drives dual N-channel
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APW7159A
APW7159A
50kHz
JESD-22,
MIL-STD-883-3015
100mA
APW7159
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GP07N120
Abstract: SGP07N120 SGP07N120 equivalent PG-TO-220-3-1 ir igbt 1200V 10A
Text: SGP07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGP07N120
PG-TO-220-3-1
GP07N120
SGP07N120
SGP07N120 equivalent
PG-TO-220-3-1
ir igbt 1200V 10A
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gb07n120
Abstract: PG-TO-263-3-2 SGB07N120 PG-TO263-3-2
Text: SGB07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGB07N120
PG-TO-263-3-2
GB07N120
PG-TO-263-3-2
SGB07N120
PG-TO263-3-2
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