SBR35
Abstract: SBR25 SBR 400 Volts
Text: SBR25/35A SERIES SILICON PASSIVATED THREE PHASE REVERSE VOLTAGE BRIDGE RECTIFIERS FEATURES - FORWARD CURRENT - 50 to 1600 Volts 15/25/35 Ampreres METAL HEAT SINK SBR ●Diffused Junction ●Low Forward Voltage Drop .453 11.5 .413(10.5) ●High Current Capability
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SBR25/35A
MIL-STD-202
11PPLIED
25/35A
11-THERMAL
142K/W
SBR25.
12-THERMAL
SBR35.
SBR35
SBR25
SBR 400 Volts
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Z2 027 5AD
Abstract: AXP 209 IC 7c2 5t Alpha 21164PC-533 irf e29 components 108Z4 OPC07 21164PC HLO019B TTL catalog
Text: Digital Semiconductor Alpha 21164PC Microprocessor Data Sheet Order Number: EC–R2W1A–TE Revision/Update Information: This is a preliminary document. Preliminary Digital Equipment Corporation Maynard, Massachusetts http://www.digital.com/semiconductor September 1997
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21164PC
Z2 027 5AD
AXP 209 IC
7c2 5t
Alpha 21164PC-533
irf e29 components
108Z4
OPC07
HLO019B
TTL catalog
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SBR35
Abstract: SBR25 SBR25A 304K sbr 20 1500 sbr35.series
Text: SBR25/35A SERIES SILICON PASSIVATED THREE PHASE REVERSE VOLTAGE BRIDGE RECTIFIERS FEATURES - 50 to 1600 Volts FORWARD CURRENT - 25/35 Ampreres METAL HEAT SINK SBR ●Diffused Junction ●Low Forward Voltage Drop .453 11.5 .413(10.5) ●High Current Capability
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SBR25/35A
MIL-STD-202
25/35A
11-THERMAL
142K/W
SBR25.
12-THERMAL
SBR35.
SBR35
SBR25
SBR25A
304K
sbr 20 1500
sbr35.series
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AXP 209 IC
Abstract: BC13 HLO019 fB g19 74 ba05 AXP 202
Text: Digital Semiconductor 21164 Alpha Microprocessor Data Sheet Order Number: EC–QP98B–TE Revision/Update Information: This is a preliminary manual. It super- sedes the Digital Semiconductor 21164 Alpha Microprocessor Data Sheet EC–QP98A–TE . Preliminary
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QP98B
QP98A
co114
AXP 209 IC
BC13
HLO019
fB g19
74 ba05
AXP 202
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AV14
Abstract: BB14 HLO019 AXP 209 IC AXP 209
Text: Alpha 21164 Microprocessor Data Sheet Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences
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Untitled
Abstract: No abstract text available
Text: SBR25/35A SERIES REVERSE VOLTAGE SILICON PASSIVATED THREE PHASE BRIDGE RECTIFIERS FEATURES - 50 to 1600 Volts FORWARD CURRENT - 25/35 Ampreres METAL HEAT SINK SBR ●Diffused Junction .453 11.5 .413(10.5) ●Low Forward Voltage Drop ●High Current Capability
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SBR25/35A
MIL-STD-202
25-Jul-2012
25/35A
11-THERMAL
142K/W
SBR25â
12-THERMAL
SBR35â
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bb06 transistor
Abstract: Alpha 21164-600 BB04 1216 ap06 SVC 561 14 BC07 AJ-07 AXP 209 IC 21164 ba05
Text: 1 About This Data Sheet This data sheet provides a technical overview of the Alpha 21164 microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary • Privileged architecture library code (PALcode) instructions
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Untitled
Abstract: No abstract text available
Text: SBR25/35A SERIES SILICON PASSIVATED THREE PHASE REVERSE VOLTAGE BRIDGE RECTIFIERS FEATURES - 50 to 1600 Volts FORWARD CURRENT - 25/35 Ampreres METAL HEAT SINK SBR ●Diffused Junction .453 11.5 .413(10.5) ●Low Forward Voltage Drop ●High Current Capability
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SBR25/35A
MIL-STD-202
25-Dec-2011
25/35A
11-THERMAL
142K/W
SBR25â
12-THERMAL
SBR35â
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BB14
Abstract: HLO019 AT-02 101d motherboard CIRCUIT diagram equivalent transistor bc 102b
Text: Alpha 21164 Microprocessor Data Sheet Order Number: EC–QP98C–TE Revision/Update Information: This is a revised manual. It supersedes the Digital Semiconductor 21164 Alpha Microprocessor Data Sheet EC–QP98B–TE . Digital Equipment Corporation Maynard, Massachusetts
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QP98C
QP98B
BB14
HLO019
AT-02
101d motherboard CIRCUIT diagram
equivalent transistor bc 102b
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Untitled
Abstract: No abstract text available
Text: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary
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OCR Scan
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ib4142
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diode D83 004
Abstract: D83 - 004
Text: Bulletin 12081/A International S R e c tifie r s d 30on/ r s e r ie s STANDARD RECOVERY DIODES Stud Version Features • W id e c u rre n t ra n g e ■ H ig h v o lta g e ra tin g s up to 3 2 0 0 V ■ H ig h s u rg e c u r re n t c a p a b ilitie s ■ S tu d c a th o d e a n d s tu d a n o d e v e rs io n
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12081/A
SD300N/R
12-Thermal
diode D83 004
D83 - 004
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Untitled
Abstract: No abstract text available
Text: International S Rectifier Bulletin 120201 40HF R SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available Types up to 1600V VRRM
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12-Thermal
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D0203AB
Abstract: stud type diodes D0-203AB
Text: Bulletin 120202 International SRectrfier 7o h f R STANDARD RECOVERY DIODES s e r ie s Stud Version Features 70 A • High surge current capability ■ Designed for a wide range of applications ■ Stud cathode and stud anode version ■ Leaded version available
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12-Thermal
S54S2
D0203AB
stud type diodes
D0-203AB
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AXP 209 IC
Abstract: 1216 ap06 BA 92 transistor SAMSUNG semiconductor replacement OPC07 21164 samsung st BC03 21164a transistor ba09 ba21 transistor bb06 transistor
Text: 21164 Alpha Microprocessor Data Sheet Preliminary ELECTRONICS Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any conse
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