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    12N80 Search Results

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    12N80 Price and Stock

    Susumu Co Ltd RG2012N-8061-W-T5

    RES SMD 8.06KOHM 0.05% 1/8W 0805
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    DigiKey RG2012N-8061-W-T5 Cut Tape 4,986 1
    • 1 $0.88
    • 10 $0.62
    • 100 $0.423
    • 1000 $0.275
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    RG2012N-8061-W-T5 Digi-Reel 4,986 1
    • 1 $0.88
    • 10 $0.62
    • 100 $0.423
    • 1000 $0.275
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    Mouser Electronics RG2012N-8061-W-T5 4,995
    • 1 $0.88
    • 10 $0.62
    • 100 $0.423
    • 1000 $0.275
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    Newark RG2012N-8061-W-T5 Reel 5,000
    • 1 -
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    • 10000 $0.35
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    JW Winco Inc 12N80M84

    STEEL LEVELING FEET
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    DigiKey 12N80M84 Box 1
    • 1 $24.67
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    JW Winco Inc 12N80A03K

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    DigiKey 12N80A03K Box 1
    • 1 $8.65
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    JW Winco Inc 12N80F35K

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    DigiKey 12N80F35K Box 1
    • 1 $7.13
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    JW Winco Inc 12N80A05K

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    DigiKey 12N80A05K Box 1
    • 1 $16.31
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    • 100 $16.31
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    12N80 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    12N80 O-220 12N80 O-220F1 O-220F2 QW-R502-594 PDF

    12n80

    Abstract: 12N80P
    Text: PolarHVTM HiPerFET Power MOSFET IXFA 12N80P IXFH 12N80P IXFP 12N80P = = ≤ ≤ VDSS ID25 RDS on trr 800 V 12 A 1.1 Ω 250 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    12N80P 12N80P O-263 O-247 O-220 405B2 12n80 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    12N80 12N80 QW-R502-594 PDF

    "12n80"

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    12N80 12N80 QW-R502-594 "12n80" PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in


    Original
    12N80 O-220 12N80 O-220F1 QW-R502-594 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    12N80 12N80 QW-R502-594 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    12N80 12N80 12N80L-T47-T QW-R502-594 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 12N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 7 A Ω ≤ 0.93 mΩ ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol


    Original
    ISOPLUS220TM 12N80P E153432 -55ved PDF

    12n80

    Abstract: "12n80"
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in


    Original
    12N80 O-220 12N80 O-220F1 O-220 QW-R502-594 "12n80" PDF

    12n80

    Abstract: 12n80p
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 12N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 7 A ≤ 0.93 mΩ Ω ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol


    Original
    ISOPLUS220TM 12N80P E153432 12n80 12n80p PDF

    12n80

    Abstract: "12n80" PSPICE thyristor triac pspice AN3003
    Text: 12N80 12N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool


    Original
    FKPF12N80 O-220F FKPF12N80 O-220F-3 AN-3003: MOC3011 FKPF12N80YDTU 12n80 "12n80" PSPICE thyristor triac pspice AN3003 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF