Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION DATE APVD A4 REVISED PER ECO-12-004531 06MAR2012 DLD DCS A5 REVISED PER ECO-13-019501 12DEC2013 DD DS 1 ACCEPTS #4 SELF TAPPING THREAD FORMING SCREWS OR
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ECO-12-004531
06MAR2012
ECO-13-019501
12DEC2013
04FEB2010
22MAR2010
27APR2010
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Untitled
Abstract: No abstract text available
Text: M24SR64-Y Dynamic NFC/RFID tag IC with 64-Kbit EEPROM, NFC Forum Type 4 Tag and I²C interface Datasheet - production data Package • 8-lead small-outline package SO8 ECOPACK 2 SO8 (MN) UFDFPN8 (MC) TSSOP8 (DW) • TSSOP8 ECOPACK®2 • UFDFPN8 ECOPACK®2
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M24SR64-Y
64-Kbit
SB12I)
M24SR64-Y
DocID023790
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Untitled
Abstract: No abstract text available
Text: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 1/4 12-Dec-2013 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage
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2SC2712
OT-23
12-Dec-2013
10Vdc,
10mAdc)
OT-23
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Untitled
Abstract: No abstract text available
Text: UCC27524A-Q1 www.ti.com SLVSCC1 – NOVEMBER 2013 Dual 5-A, High-Speed, Low-Side Gate Driver With Negative Input Voltage Capability FEATURES APPLICATIONS • • • • • • • 2 • • • • • • • • • • • • • • • • • Qualified for Automotive Applications
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UCC27524A-Q1
AEC-Q100
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Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P D 770669-2 & 1-770669-2 770669-4 KEY LOCATION SCALE 2:1 & 1-770669-4 770669-5 KEY LOCATION SCALE 2:1 KEY LOCATION SCALE 2:1 19.3
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ECO-13-001836
14FEB2013
ECO-13-019565
12DEC2013
31DEC2002
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Untitled
Abstract: No abstract text available
Text: EMIF05-AUD02F3 EMI filter and ESD protection for audio interface Datasheet - production data Description The EMIF05-AUD02F3 chip is a highly integrated audio filter device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference.
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EMIF05-AUD02F3
EMIF05-AUD02F3
DocID025579
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marking code RAD SMD Transistor npn
Abstract: JS55
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
marking code RAD SMD Transistor npn
JS55
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Untitled
Abstract: No abstract text available
Text: STW70N60M2 N-channel 600 V, 0.03 Ω typ., 68 A MDmesh II Plus low Qg Power MOSFET in a TO-247 package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STW70N60M2 650 V 0.040 Ω 68 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation
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STW70N60M2
O-247
O-247
DocID024327
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Untitled
Abstract: No abstract text available
Text: M95512-A125 M95512-A145 Automotive 512-Kbit serial SPI bus EEPROMs with high-speed clock Datasheet - production data Features • Compatible with the Serial Peripheral Interface SPI bus SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width WFDFPN8 (MF) 2 x 3 mm
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M95512-A125
M95512-A145
512-Kbit
DocID022682
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Abstract: No abstract text available
Text: LMK00338 www.ti.com SNAS636 – DECEMBER 2013 LMK00338 8-Output Differential Clock Buffer/Level Translator Check for Samples: LMK00338 FEATURES APPLICATIONS • • 1 2 • • • • • • • • 3:1 Input Multiplexer – Two Universal Inputs Operate up to 400
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LMK00338
SNAS636
LMK00338
100MHz:
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RAD SMD MARKING CODE
Abstract: 2N5551RUB
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate UB Description
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
RAD SMD MARKING CODE
2N5551RUB
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P 60.8 1 4X ( 2.17 ) ( 19.25 ) ( 15 ) 2X ( 2 ) DWN APVD C7 REVISED PER ECO-12-016002 05SEP2012 DD DS C8 REVISED PER ECO-13-019565
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ECO-12-016002
05SEP2012
ECO-13-019565
12DEC2013
05MAR2010
22MAR2010
27APR2010
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Untitled
Abstract: No abstract text available
Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics
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2N5153HR
O-257
2N5153HR
O-257
DocID15386
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Untitled
Abstract: No abstract text available
Text: M24SR64-Y Dynamic NFC/RFID tag IC with 64-Kbit EEPROM, NFC Forum Type 4 Tag and I²C interface Datasheet - production data Package • 8-lead small-outline package SO8 ECOPACK 2 SO8 (MN) UFDFPN8 (MC) TSSOP8 (DW) • TSSOP8 ECOPACK®2 • UFDFPN8 ECOPACK®2
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M24SR64-Y
64-Kbit
SB12I)
M24SR64-Y
DocID023790
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Untitled
Abstract: No abstract text available
Text: Customer Specific Datasheet KOR-001 3D RADAR TRANSCEIVER For technology information only Features • This is not an RFbeam Standard product 24 GHz K-band Superhet Transceiver Highest Sensitivity Receiver Measure of Speed, Distance and Angle
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KOR-001
20dBm
100MHz)
125MHz)
22-Nov-2013
12-Dec-2013
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Untitled
Abstract: No abstract text available
Text: L6480 cSPIN : microstepping motor controller with motion engine and SPI Datasheet - production data Applications • Bipolar stepper motor Description The L6480 device, realized in analog mixed signal technology, is an advanced fully integrated solution suitable for driving two-phase bipolar
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L6480
L6480
HTSSOP38
DocID023278
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Untitled
Abstract: No abstract text available
Text: STL110N10F7 N-channel 100 V, 0.005 Ω typ., 107 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 Order code VDS STL110N10F7 100 V RDS on max ID PTOT 0.006 Ω 107 A 136 W (VGS= 10 V) • Ultra low on-resistance
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STL110N10F7
DocID024004
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Untitled
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Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P 19.3 ( 8.00 ) 7.75 7.30 ( 0.75 ) GASKET D DATE DWN APVD E7 REVISED PER ECO-13-001836 14FEB2013 DD DS E8 REVISED PER ECO-13-019565
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ECO-13-019565
12DEC2013
31DEC2002
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Untitled
Abstract: No abstract text available
Text: TMS320C6203B FIXEDĆPOINT DIGITAL SIGNAL PROCESSOR SPRS086N − JANUARY 1999 − REVISED JULY 2006 D High-Performance Fixed-Point Digital D D D D D D Signal Processor DSP − TMS320C62x − 4-, 3.33-ns Instruction Cycle Time − 250-, 300-MHz Clock Rate
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TMS320C6203B
SPRS086N
TMS320C62xï
33-ns
300-MHz
32-Bit
C6203B
C6202
C6204
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Untitled
Abstract: No abstract text available
Text: TPS65276V www.ti.com SLVSBW0A – FEBRUARY 2013 – REVISED JUNE 2013 4.5-V TO 18-V INPUT VOLTAGE, 6-A/3.5-A DUAL SYNCHRONOUS STEP-DOWN CONVERTER WITH I2C CONTROLLED VID Check for Samples: TPS65276V FEATURES 1 • • • • • • • • • 4.5-V to 18-V Wide Input Voltage Range
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TPS65276V
10-mV
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Abstract: No abstract text available
Text: TMS320F28377D, TMS320F28376D www.ti.com SPRS880 – DECEMBER 2013 TMS320F2837xD Dual-Core Delfino Microcontrollers Check for Samples: TMS320F28377D, TMS320F28376D 1 TMS320F2837xD Dual-Core Delfino MCUs 1.1 Features • Dual-Core Architecture – Two TMS320C28x™ 32-Bit CPUs
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TMS320F28377D,
TMS320F28376D
SPRS880
TMS320F2837xD
TMS320C28xâ
32-Bit
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Untitled
Abstract: No abstract text available
Text: STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh II Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order codes TAB VDS @ Tjmax RDS on max. ID 650 V 0.9 Ω 5A STB7ANM60N TAB STD7ANM60N 2 • Designed for automotive applications and
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STB7ANM60N,
STD7ANM60N
STB7ANM60N
AEC-Q101
DocID023350
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Untitled
Abstract: No abstract text available
Text: STL110N10F7 N-channel 100 V, 0.005 Ω typ., 21 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 Order code VDSS RDS on max ID PTOT STL110N10F7 100 V 0.006 Ω 21 A 4.8 W (VGS= 10 V) • Ultra low on-resistance
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STL110N10F7
DocID024004
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Untitled
Abstract: No abstract text available
Text: BAV99T Surface Mount Switching Diodes SWITCHING DIODES 75 mAMPERES 85 VOLTS P b Lead Pb -Free Features: * Ultra-Small Surface Mount Package * Fast switching Speed * For General Purpose Switching Applications * High Conductance 3 1 2 Mechanical Data: SOT-523(SC-75)
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BAV99T
OT-523
SC-75)
MIL-STD-202,
SC-75
12-Dec-2013
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