617 connector
Abstract: EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 EIA-364-52
Text: 108-1985 Product Specification 12Dec05 Rev A Z-DOK* and Z-DOK*+ Connectors 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for Z-DOK* and Z-DOK*+ Connectors. These right angle board-to-board solder through hole connectors are designed to
|
Original
|
12Dec05
617 connector
EIA-364-20
EIA-364-21
EIA-364-27
EIA-364-28
EIA-364-52
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET
|
Original
|
Si8435DB
08-Apr-05
|
PDF
|
Si6435ADQ
Abstract: No abstract text available
Text: SPICE Device Model Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si6435ADQ
S-52526Rev.
12-Dec-05
|
PDF
|
marking L42
Abstract: No abstract text available
Text: BAT54 / 54A / 54C / 54S Vishay Semiconductors Small Signal Schottky Diodes, Single & Dual Features • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN e3 junction guard ring against excessive voltage, such as electrostatic discharges
|
Original
|
BAT54
2002/95/EC
2002/96/EC
BAT54
BAT54A
OT-23
BAT54C
BAT54S
BAT54A
marking L42
|
PDF
|
VH102Z
Abstract: RNC90Z VHZ555 Z201
Text: VHZ Hermetic Vishay Foil Resistors Bulk Metal Foil Technology Hermetically Sealed Resistors, Aerospace FEATURES • VH102Z Series Nominal Temperature Coefficient of Resistance: ± 0.2ppm/°C MIL Range see table 2 Product may not be to scale • VHZ555 Temperature Coefficient of Resistance:
|
Original
|
VH102Z
VHZ555
VHZ555)
VH102Z:
VHZ555:
18-Jul-08
RNC90Z
Z201
|
PDF
|
Si5447DC
Abstract: No abstract text available
Text: SPICE Device Model Si5447DC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si5447DC
18-Jul-08
|
PDF
|
SI5435BDC
Abstract: No abstract text available
Text: SPICE Device Model Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si5435BDC
18-Jul-08
|
PDF
|
Si8415DB
Abstract: No abstract text available
Text: SPICE Device Model Si8415DB Vishay Siliconix P-Channel 12V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si8415DB
18-Jul-08
|
PDF
|
Si5443DC
Abstract: No abstract text available
Text: SPICE Device Model Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si5443DC
18-Jul-08
|
PDF
|
Si7485DP
Abstract: No abstract text available
Text: SPICE Device Model Si7485DP Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si7485DP
18-Jul-08
|
PDF
|
Si6433BDQ
Abstract: No abstract text available
Text: SPICE Device Model Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si6433BDQ
18-Jul-08
|
PDF
|
Si6463BDQ
Abstract: No abstract text available
Text: SPICE Device Model Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si6463BDQ
18-Jul-08
|
PDF
|
Si5473DC
Abstract: No abstract text available
Text: SPICE Device Model Si5473DC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si5473DC
18-Jul-08
|
PDF
|
Si6435ADQ
Abstract: No abstract text available
Text: SPICE Device Model Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si6435ADQ
18-Jul-08
|
PDF
|
|
|
Si7423DN
Abstract: No abstract text available
Text: SPICE Device Model Si7423DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si7423DN
S-52519Rev.
12-Dec-05
|
PDF
|
Si6433BDQ
Abstract: No abstract text available
Text: SPICE Device Model Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si6433BDQ
S-52526Rev.
12-Dec-05
|
PDF
|
Si5435DC
Abstract: No abstract text available
Text: SPICE Device Model Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si5435DC
S-52525Rev.
12-Dec-05
|
PDF
|
Si7491DP
Abstract: 18A52 TR 104 a5246
Text: SPICE Device Model Si7491DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si7491DP
S-52519Rev.
12-Dec-05
18A52
TR 104
a5246
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR P CONTAC DESCRIPTION REV PER EC 0S 12 - 0 3 0 4 - 0 5 DATE DWN APVD 12DEC05 BC GS CONTACT LAYOU
|
OCR Scan
|
12DEC05
31MAR2000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. REVISIONS DESCRIPTION APVD INITIAL REVISION 12DEC05 04DEC09 ECR-09-026519 STRIPPING HAND TOOL FOR SOLAR CABLES FOR SOLAR- WIRE WITH WIRE SIZES/ Für Solar- Kabel mit Drahtguerschnitten: 1.5mm2 , 2.5mm2, 4mm2, 6mm1 REPLACEMENT BLADES:
|
OCR Scan
|
12DEC05
ECR-09-026519
04DEC09
13DEC05
13DEC05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S LTR K DESCRIPTION 0G 3C —0 2 1 6 —05 DATE DWN APVD 12DEC05 RB JG A A A —I © i > .0 1 5 © CL <
|
OCR Scan
|
12DEC05
31MAR2000
|
PDF
|
lz 2 1068
Abstract: RTI 820 board
Text: THIS DRAWING IS UNPUBLISHED. LOC DIST AD 00 R E VIS IO N S LTR D TYP AT HOLD-DOWN TIPS DESCRIPTION EC 0G3C 0 8 0 0 DATE 04 12DEC05 DWN APVD BSV JLG 11 PACKAGE: CIRCUIT IDENTIFICATION DETAIL FOR 2 POSITION HOUSING ONLY CIRCUIT IDENTIFICATION DETAIL FOR 3 AND 4 POSITION HOUSING ONLY
|
OCR Scan
|
260CT99
lz 2 1068
RTI 820 board
|
PDF
|
02VA
Abstract: alco switch alco alco electronics
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION — 2 - LO C ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. AD DIST R E V IS IO N S 00 LTR A DESCRIPTION DRAWING CREATED DATE DWN 12DEC05 MKC APVD D MATERIALS C O M PO N E N T NAME
|
OCR Scan
|
200/jVAC
31MAR2000
02VA
alco switch
alco
alco electronics
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 R E V IS IO N S LTR B CONTAC DESCRIPTION REV PER EC 0S 12 - 0 3 0 2 - 0 5 DATE DWN APVD 12DEC05 BC GS SCALE 5:1
|
OCR Scan
|
12DEC05
31MAR2000
|
PDF
|