SAMSUNG MCP
Abstract: MCP NAND
Text: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die
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K5P2881BCM
16Mx8)
512Kx16)
69-Ball
SAMSUNG MCP
MCP NAND
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K9K1G08X0B
Abstract: K9K1G08U0B K9K1G08B0B K9K1G08R0B ci 4093
Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.
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K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
K9K1G08X0B
K9K1G08U0B
K9K1G08B0B
K9K1G08R0B
ci 4093
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K9K1G08U0B
Abstract: K9K1G08B0B K9K1G08R0B 528-byte 3310H
Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B Advance FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.
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K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
K9K1G08U0B
K9K1G08B0B
K9K1G08R0B
528-byte
3310H
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K9K1G08U0B
Abstract: No abstract text available
Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B Preliminary FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.
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K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
K9K1G08U0B
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Untitled
Abstract: No abstract text available
Text: ADVANCED DATASHEET IS34MC01GA08/16 IS34MC01GA08/16 3.3V 1Gb SLC NAND Flash Memory Specification and Technical Notes Page 1 IS34MC01GA08 IS34MC01GA16 128M x 8bit / 64M x 16bit NAND Flash Memory PRODUCT LIST Part Number VCC Range Organization IS34MC01GA08 IS34MC01GA16
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IS34MC01GA08/16
IS34MC01GA08
IS34MC01GA16
16bit
48-TSOP
63-BGA
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Untitled
Abstract: No abstract text available
Text: ESM T F59L1G81A Operation Temperature Condition -40 C~85 C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59L1G81A
200us
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Untitled
Abstract: No abstract text available
Text: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes
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F59L1G81A
200us
it/528
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F59D1G81A
Abstract: 1G NAND flash Elite Semiconductor Memory Technology nand
Text: ESMT F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES z z z z z z z Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte
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F59D1G81A
1bit/528Byte
F59D1G81A
1G NAND flash
Elite Semiconductor Memory Technology nand
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Untitled
Abstract: No abstract text available
Text: ESM T F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
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F59D1G81A
250us
1bit/528Byte
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Untitled
Abstract: No abstract text available
Text: IS34MC01GA08/16 A D VA N C ED D A TA SH IS34MC01GA08/16 3.3V 1Gb SLC NAND Flash Memory Specification and Technical Notes EE T ADVANCED DATASHEET Page 1 IS34MC01GA08 IS34MC01GA16 128M x 8bit / 64M x 16bit NAND Flash Memory PRODUCT LIST Part Number VCC Range
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IS34MC01GA08/16
IS34MC01GA08
IS34MC01GA16
16bit
48-TSOP
63-BGA
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NAND Flash
Abstract: No abstract text available
Text: ESMT F59D2G81A / F59D2G161A Flash 2 Gbit 256M x 8 / 128M x 16 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit
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F59D2G81A
F59D2G161A
16bit
NAND Flash
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Untitled
Abstract: No abstract text available
Text: ESMT F59L1G81MA 2Y Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte
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F59L1G81MA
300us
4bit/512Byte,
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1G NAND flash
Abstract: F59L1G81A F59L
Text: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
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F59L1G81A
200us
1G NAND flash
F59L1G81A
F59L
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NAND Flash
Abstract: No abstract text available
Text: ESMT F59D1G81A / F59D1G161A Flash 1 Gbit 128M x 8/ 64M x 16 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit
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F59D1G81A
F59D1G161A
16bit
NAND Flash
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NAND Flash
Abstract: F59L1G81A
Text: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes
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F59L1G81A
200us
it/528
NAND Flash
F59L1G81A
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F59L1G81A
Abstract: No abstract text available
Text: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes
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F59L1G81A
200us
F59L1G81A
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SAMSUNG MCP
Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
Text: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0
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KBE00D002M-F407
16Mx16)
2Mx16x4Banks)
128Mb
137-Ball
80x14
SAMSUNG MCP
F407
KBE00D002M-F407
samsung "nor flash" sensing
UtRAM Density
137FBGA
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SAMSUNG MCP
Abstract: MCP MEMORY MCP 256M nand 128M mobile sdram UtRAM Density samsung nor nand ddr mcp samsung mcp ka Kal00 nand sdram mcp
Text: Preliminary MCP MEMORY KAL00B00BM-FGV X V(X) Document Title Multi-Chip Package MEMORY 256M Bit (16Mx16) Nand Flash / 128M Bit (4Mx8x4Banks) Mobile SDRAM*2 Revision History Revision No. History 0.0 0.1 Draft Date Remark Initial draft. - 256Mb NAND C-Die_Ver 2.6
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KAL00B00BM-FGV
16Mx16)
256Mb
127-Ball
80x12
08MAX
SAMSUNG MCP
MCP MEMORY
MCP 256M nand 128M mobile sdram
UtRAM Density
samsung nor nand ddr mcp
samsung mcp ka
Kal00
nand sdram mcp
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KBB0XA300M
Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary
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KBB0xA300M
8Mx8/4Mx16)
8Mx16)
2Mx16)
80-Ball
80x12
transistor ba47
SAMSUNG MCP
BA108
BA102
BA99
NAND FLASH BGA
BGA34
BGA22
t402
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SAMSUNG 256Mb NAND Flash Qualification Reliability
Abstract: K9T1G08B0M-FCB0
Text: Preliminary FLASH MEMORY K9T1G08B0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 8th 2004 Advanced 0.1 1.Program/Erase characteristics note1 is added 2.Technical note is changed
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K9T1G08B0M
SAMSUNG 256Mb NAND Flash Qualification Reliability
K9T1G08B0M-FCB0
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K9K2G08U0M-YCB0
Abstract: 128Mx16bit
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G16Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9K2G08U0M-VCB0,VIB0 Advance FLASH MEMORY K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9K2G08Q0M-YCB0
K9K2G16Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16U0M-YCB0
K9K2G08U0M-VCB0
128Mx16bit
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SAMSUNG 4gb NAND Flash Qualification Report
Abstract: samsung 2GB X16 Nand flash samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report LA14
Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9F1G08Q0M-YCB0
K9F1G08U0M-YCB0
K9F1G16Q0M-YCB0
K9F1G16U0M-YCB0
K9F1G08U0M-VCB0
SAMSUNG 4gb NAND Flash Qualification Report
samsung 2GB X16 Nand flash
samsung 2GB X8 Nand flash
SAMSUNG NAND Flash Qualification Report
LA14
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K9F2G08U0M-YCB0
Abstract: K9F2G16U0M-Y
Text: K9F2G08Q0M-YCB0,YIB0 K9F2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9F2G16Q0M-YCB0,YIB0 K9F2G16U0M-YCB0,YIB0 Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001
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K9F2G08Q0M-YCB0
K9F2G08U0M-YCB0
K9F2G16Q0M-YCB0
K9F2G16U0M-YCB0
K9F2G08Q0M
K9F2G16U0M-Y
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Untitled
Abstract: No abstract text available
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 30.2001
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K9K2G08Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16Q0M-YCB0
K9K2G16U0M-YCB0
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