2SA1201
Abstract: 2SC2881
Text: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage
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2SC2881
120MHz
2SA1201
100mA
500mA
2SA1201
2SC2881
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EL2444
Abstract: LT1229 equivalent EL2444CS-T7 AD827 EL2044 EL2244 EL2244CN EL2244CS EL2244CS-T7
Text: EL2244, EL2444 Data Sheet August 16, 2002 Dual/Quad Low-Power 120MHz Unity-Gain Stable Op Amp The EL2244 and EL2444 are dual and quad versions of the popular EL2044. They are high speed, low power, low cost monolithic operational amplifiers built on Elantec's
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EL2244,
EL2444
120MHz
EL2244
EL2444
EL2044.
EL2244
FN7059
LT1229 equivalent
EL2444CS-T7
AD827
EL2044
EL2244CN
EL2244CS
EL2244CS-T7
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Untitled
Abstract: No abstract text available
Text: Fixed Inductors 固定インダクタ 10RB Inductance Range: 1.0~120mH DIMENSIONS／外形寸法図 φ10.8Max. 14.0Max. 4.0 5.0 φ0.7 Unit: mm FEATURES／特 長 • Magnetically shielded construction. • Suitable for large current. • RoHS compliant.
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120mH
YHP-4343Bå
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cgr0118z
Abstract: 100C
Text: CGR-0118Z Dual CATV 5MHz to 120MHz CATV Amp IC CGR-0118Z Preliminary DUAL CATV 5MHz to 120MHz CATV AMP IC RFMD Green, RoHS Compliant, and Pb-Free Product Package: SOIC 8 Product Description Features RFMD’s CGR-0118Z is a high performance 75Ω push-pull GaAs HBT
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CGR-0118Z
120MHz
CGR-0118Z
XFM-0201-1WH
PS-103KLB
DS090120
cgr0118z
100C
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PDF
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2SC2881L
Abstract: 032 b
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 SOT-89 RDERING INFORMATION
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2SC2881
120MHz
2SA1201
OT-89
2SC2881L-x-AB3-R
2SC2881G-x-AB3-R
OT-89
QW-R204-032
QW-R208-032
2SC2881L
032 b
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KSC2881
Abstract: hFE CLASSIFICATION Marking
Text: Transistors SMD Type NPN Epitaxial Silicon Transistor KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter
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KSC2881
120MHz
250mm2X0
100mA
500mA,
500mA
KSC2881
hFE CLASSIFICATION Marking
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors Transistor T SMD Type Product specification KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter
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KSC2881
120MHz
250mm2X0
100mA
500mA,
500mA
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PDF
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DSP56854
Abstract: 56800E DSP56800E DSP56800ERM DSP56854E
Text: 56854 Data Sheet Technical Data 56800E 16-bit Digital Signal Controllers DSP56854 Rev. 6 01/2007 freescale.com 56854 General Description • 120 MIPS at 120MHz • Serial Port Interface SPI • 16K x 16-bit Program SRAM • 8-bit Parallel Host Interface
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56800E
16-bit
DSP56854
120MHz
DSP56854
56800E
DSP56800E
DSP56800ERM
DSP56854E
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PDF
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mitsumi variable coil
Abstract: No abstract text available
Text: MITSUMI Adjustable Coils SMD Type M Series Coils, Transformers M5-N Specifications 1 0.03~130µH (2) 3~200MHz (3) F:±2% L:±4% (4) (5) 30~80 Features SMD 1,000pcs./Reel M5-NP 4-1 5.6±0.3 Specifications Features (1) 56~120nH SMD (2) 1~120MHz 1,000pcs./Reel
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200MHz
000pcs
120nH
120MHz
mitsumi variable coil
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PDF
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HA2-5147-2
Abstract: HA3-5147-5 HA2-5147-5 op07 ic metal package datasheet HA-5147 HA-5147A OP06 OP07 OP25 OP27
Text: HA-5147, HA-5147A S E M I C O N D U C T O R 120MHz, Ultra-Low Noise Precision Operational Amplifiers July 1997 Features Description • Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V/µs The HA-5147 operational amplifier features an unparalleled
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HA-5147,
HA-5147A
120MHz,
HA-5147
120MHz
1-800-4-HARRIS
HA2-5147-2
HA3-5147-5
HA2-5147-5
op07 ic metal package datasheet
HA-5147A
OP06
OP07
OP25
OP27
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor
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KSC2881
120MHz
KSA1201
OT-89
250mm2x0
KSC2881YTF
KSC2881OTF
OT-89
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PDF
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blu-ray OPTICAL PICK-UP
Abstract: blue optical pickup head PDIC blue blu-ray pick-up bluray opu blu-ray PDIC a/S3C9004/P9004/C9014/PDIC dvd cd
Text: MLX75012 10-Channel High-Speed Universal PDIC Features Triple wavelength 405nm, 650nm and 780nm 120MHz bandwidth high speed RF-Channels 8 selectable gain modes, sleep mode Tristate inputs for gain mode selection Two PD-pattern design Low noise design Integrated test mode for easy pick-up
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MLX75012
10-Channel
405nm,
650nm
780nm
120MHz
20-pin
49Bit
MLX75012
ISO14001
blu-ray OPTICAL PICK-UP
blue optical pickup head
PDIC blue
blu-ray pick-up
bluray opu
blu-ray PDIC
a/S3C9004/P9004/C9014/PDIC dvd cd
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PDF
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Untitled
Abstract: No abstract text available
Text: 120MHz SAW Filter 15MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBT12043 www.sipatsaw.com Features For IF SAW filter High attenuation Single-ended operation Dual In-line Package
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120MHz
15MHz
LBT12043
2002/95/EC)
U50ns/Div
10deg/Div
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PDF
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KTA1661
Abstract: KTC4373 Vceo-120V
Text: SEMICONDUCTOR KTC4373 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES A High Voltage : VCEO=120V. C H High Transition Frequency : fT=120MHz Typ. . G J B E 1W(Monunted on Ceramic Substrate). Small Flat Package. DIM A B C D
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KTC4373
120MHz
KTA1661.
100mA
500mA,
500mA
KTA1661
KTC4373
Vceo-120V
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PDF
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KTC3206
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC3206 TO-92L TRANSISTOR NPN 1. EMITTER FEATURE z High Breakdown Voltage : VCEO=150V(Min.) z Low Output Capacitance : Cob=5.0pF(Max.) z High Transition Frequency : fT=120MHz(Typ.).
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O-92L
KTC3206
O-92L
120MHz
KTC3206
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC2881 Unit in mm POWER AMPLIFIER APPLICATIONS. 4.6 MAX. FEATURES: 1.7 MAX. . High Voltage J 3 = : V c e q =120V . High Transition Frequency : fT=120MHz . Pc=l ~ 2 W Mounted on Ceramic Substrate . Small Flat Package + CL08 Q45 — Q.05
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OCR Scan
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2SC2881
120MHz
2SA1201
0L4-Q05
100mA
500mA,
500mA
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PDF
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telonic
Abstract: CV7478 Logarithmic Amplifier detector "logarithmic amplifier" SL521 SL523 SL523AC log amplifier
Text: SL523AC 120MHz DUAL WIDEBAND LOG AMPLIFIER CONFORMS TO MIL-STD-883C CLASS B T he SL523AC is a w id e b a n d a m p lifie r fo r use in successive d e te c tio n lo g a rith m ic IF s trip s o p e ra tin g a t c e n tre fre q u e n cie s betw een 10 and 100MHz. It is p in -co m p a tib le
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OCR Scan
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SL523AC
120MHz
MIL-STD-883C
SL523AC
100MHz.
SL521
SL523s
SL521,
SL521s
telonic
CV7478
Logarithmic Amplifier detector
"logarithmic amplifier"
SL523
log amplifier
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PDF
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Tri-State Buffer CMOS
Abstract: NJU6342 NJU6342H NJU6342XC NJU6342XE 780Q
Text: N J TR I-STATE Series PACKAGE OUTLINE O NJU6342XC NJU6342XE PIN CONFIGURATION/PAD LOCATION 4.0~6.0V 120MHz equivalent 2 1 8 □ □ □ CONT C x t 1 C 2 8 □ V| D 7 unc + D □ 3 4 a 5 NCC 3 6 D V "C 5 D F o. t CHIP/EMP 8 LINE-UP TABLE VERSION 2 BUFFER GENERAL DESCRIPTION
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OCR Scan
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NJU6342
120MHz
45-55X
NJU6342H
NJU6342XC
NJU6342XE
120MHz
NJU6342
Tri-State Buffer CMOS
NJU6342XC
NJU6342XE
780Q
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PDF
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AD640
Abstract: No abstract text available
Text: □ ANALOG DEVICES FEATU R ES DC Coupled Demodulating 120MHz Logarithmic Amplifier AD640 FUNCTIONAL BLOCK DIAGRAM Complete, Fully Calibrated Monolithic System Five Stages, Each Having 10dB Gain, 350MHz BW Direct Coupled Fully Differential Signal Path Logarithmic Slope, Intercept and AC Response are
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OCR Scan
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120MHz
AD640
350MHz
220mW
120MHz
-82dBV
AD640
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1201 TOSHIBA 2 SA 1 2 0 1 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS High Voltage :V C E O = —120V High Transition Frequency : fr = 120MHz(Typ.) P q = 1—2W (Mounted on Ceramic Substrate) Small Flat Package
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OCR Scan
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2SA1201
120MHz
2SC2881
250mm2
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 1.6MAX. High Voltage : VCEO = 150V High Transition Frequency : fp = 120MHz P q = 0.8—2W (Mounted on Ceramic Substrate)
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OCR Scan
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2SC2880
120MHz
2SA1200
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PDF
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S500M
Abstract: No abstract text available
Text: TOSHIBA 2SA1200 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. 4.6MAX. High Voltage 1.7MAX. : V q e o - - 150V 0.4 ±0.05 High Transition Frequency : fx = 120MHz (Typ.) P q = 1 ~ 2W (Mounted on Ceramic Substrate)
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OCR Scan
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2SA1200
120MHz
2SC2880
S500M
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PDF
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Untitled
Abstract: No abstract text available
Text: 1. M echanical D im ensions: 2 . S c h e m a tic : X □ o- 01 3. E le c tric a l S p e c ific a tio n : INDUCTANCE: 3.3uH ±20% @100KHz 0.1V DCR: 0 ,0 5 5 Ohms Max Q: 40 @200KHz SRF: 120MHz Typ Isat: 0.75Adc Based on 30% drop in OCL 0 .0 5 5 T .4 0 Notes:
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OCR Scan
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100KHz
200KHz
120MHz
75Adc
MIL-STD-202G,
UL34Vâ
E151556
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PDF
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Untitled
Abstract: No abstract text available
Text: TRI-STATE HCMOS PROGRAMMABLE CLOCK OSCILLATOR F6053A OSCILLATORS The F6053A is a user-programmable tri-state clock oscillator which provides frequency selection between 360kHz - 120MHz at the point o f application. The use o f the "MUXREF" function allows a glitchfree "on the fly" change in frequency. For some specific applications,
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OCR Scan
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F6053A
F6053A
360kHz
120MHz
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PDF
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