Untitled
Abstract: No abstract text available
Text: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-L59-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: V23990-P629-F73-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-F73-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L63-PM flow BOOST 0 1200V/50A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications
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V23990-P629-L63-PM
200V/50A
V23990-P629-L63
D7-D10
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L99-PM datasheet flow BOOST 0 1200V/40A Features flow 0 17mm housing ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications ● solar inverter
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V23990-P629-L99-PM
200V/40A
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V23990-P629
Abstract: V23990-P629-F62-PM
Text: V23990-P629-F62-PM / V23990-P629-F629-PM V23990-P629-F628Y-PM / V23990-P629-F629Y-PM flow BOOST 0 1200V/40A Features flow0 12mm and 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode
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V23990-P629-F62-PM
V23990-P629-F629-PM
V23990-P629-F628Y-PM
V23990-P629-F629Y-PM
200V/40A
V23990-P629-F62-PM
V23990-P629-F628Y-PM
V23990-P629
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Untitled
Abstract: No abstract text available
Text: MSiCST02120 Available Silicon Carbide Schottky Power Rectifier 2A, 1200V DESCRIPTION These 1200V silicon carbide Schottky rectifiers are in a hermetically sealed package with internal metallurgical bonds. Its very fast switching capabilities provide greater efficiency at
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MSiCST02120
T4-LDS-0110,
13xxxx)
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Untitled
Abstract: No abstract text available
Text: MSiCST02120 Available Silicon Carbide Schottky Power Rectifier 2A, 1200V DESCRIPTION These 1200V silicon carbide Schottky rectifiers are in a hermetically sealed package with internal metallurgical bonds. Its very fast switching capabilities provide greater efficiency at
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MSiCST02120
T4-LDS-0110,
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SIDC08D120F6
Abstract: No abstract text available
Text: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:
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SIDC08D120F6
Q67050-A4169A001
4355M,
SIDC08D120F6
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MIMMG100S120B6UN
Abstract: No abstract text available
Text: MIMMG100S120B6UN 1200V 100A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP 1200V NPT technology □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current
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MIMMG100S120B6UN
Figure10.
Figure11.
Figure12.
MIMMG100S120B6UN
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MIMMG150D120B6UN
Abstract: No abstract text available
Text: MIMMG150D120B6UN 1200V 150A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP 1200V NPT technology □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current
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MIMMG150D120B6UN
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Figure12.
MIMMG150D120B6UN
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SIDC06D120E6
Abstract: No abstract text available
Text: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:
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SIDC06D120E6
Q67050-A4122A001
4342P,
SIDC06D120E6
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SIDC03D120F6
Abstract: No abstract text available
Text: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:
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SIDC03D120F6
Q67050-A4168A001
4375M,
SIDC03D120F6
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SIDC03D120H6
Abstract: No abstract text available
Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:
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SIDC03D120H6
Q67050-A4156A001
4372S,
SIDC03D120H6
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MIMMG75S120B6UN
Abstract: No abstract text available
Text: MIMMG75S120B6UN 1200V 75A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP 1200V NPT technology □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current
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MIMMG75S120B6UN
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Figure12.
MIMMG75S120B6UN
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SIDC06D120E6
Abstract: No abstract text available
Text: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:
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SIDC06D120E6
Q67050-A4122A001
4342P,
SIDC06D120E6
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1200v 3A
Abstract: SIDC03D120H6
Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:
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SIDC03D120H6
Q67050-A4156A001
4372S,
1200v 3A
SIDC03D120H6
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SIDC06D120F6
Abstract: No abstract text available
Text: Preliminary SIDC06D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120F6 1200V IF C Applications:
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SIDC06D120F6
Q67050-A4183A001
4345M,
SIDC06D120F6
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SIDC03D120F6
Abstract: No abstract text available
Text: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:
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SIDC03D120F6
Q67050-A4168A001
4375M,
SIDC03D120F6
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SIDC08D120F6
Abstract: No abstract text available
Text: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:
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SIDC08D120F6
Q67050-A4169A001
4355M,
SIDC08D120F6
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MIMMG75HB120H6UN
Abstract: No abstract text available
Text: MIMMG75HB120H6UN 1200V 75A Four-Pack Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP 1200V NPT technology □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current
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MIMMG75HB120H6UN
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Figure13.
MIMMG75HB120H6UN
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MOSFET 1200v 3a
Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
Text: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with
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1000V 20A transistor
Abstract: fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery
Text: Powerex Fast Recovery Single Diode Modules 7/3/2003 500V 600V 600V 1000V 1200V CS340602 20A Ic A *click on the products for additional information 1200V 1400V 25A CS240650 QRS0620T30 250A 50A 100A CS241210 200A 35A RM35HG-34S CS240610 CS241020 QRS1220T30
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CS340602
CS341202
RM25HG-24S
CS241250
CS240650
CS240610
CS241210
QRS0620T30
CS241020
QRS1220T30
1000V 20A transistor
fast recovery diode 600v 1200A
500V 100A thyristors
diode 500A
diode
IC data book free download
600v
RM400HA-34S
DIODE 200A 600V
fast recovery
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4175M
Abstract: 4175
Text: Preliminary SIDC14D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC14D120F6 1200V IF 15A A This chip is used for:
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SIDC14D120F6
Q67050-A4170sawn
4175M,
4175M
4175
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SIDC01D120H6
Abstract: No abstract text available
Text: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:
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SIDC01D120H6
Q67050-A4171A001
4002S,
SIDC01D120H6
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