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    11N60S5 Search Results

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    11N60S5 Price and Stock

    Rochester Electronics LLC SPW11N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPW11N60S5 Bulk 160
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    Rochester Electronics LLC SPI11N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPI11N60S5 Bulk 260
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    Infineon Technologies AG SPI11N60S5BKSA1

    MOSFET N-CH 600V 11A TO262-3
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    DigiKey SPI11N60S5BKSA1 Tube 500
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    Infineon Technologies AG SPP11N60S5HKSA1

    MOSFET N-CH 650V 11A TO220-3
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    DigiKey SPP11N60S5HKSA1 Tube 500
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    Infineon Technologies AG SPP11N60S5XKSA1

    LOW POWER_LEGACY
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    11N60S5 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF

    11N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11N60S5

    Abstract: SPI11N60S5
    Text: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


    Original     		PDF SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5

    11N60S5 equivalent

    Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
    Text: 11N60S5, 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760

    SPW11N60S5

    Abstract: 06161L 11N60S5 equivalent 11N60S5
    Text: 11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38


    Original     		PDF SPW11N60S5 P-TO247 SPWx2N60S5 Q67040-S4239 11N60S5 SPW11N60S5 06161L 11N60S5 equivalent 11N60S5

    11N60S5

    Abstract: SPW11N60S5
    Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5

    AR1010

    Abstract: No abstract text available
    Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 AR1010

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW11N60S5 P-TO247 Q67040-S4239 11N60S5

    11N60S5 equivalent

    Abstract: 11N60S5 SPW11N60S5
    Text: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPW11N60S5 PG-TO247 Q67040-S4239 11N60S5 11N60S5 equivalent 11N60S5 SPW11N60S5

    11N60S5

    Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5
    Text: 11N60S5 11N60S5, 11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances


    Original     		PDF SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5

    11n60s

    Abstract: 11n60 SMD CASE footprint
    Text: 11N60S5 11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 11N60S5 Q67040-S4198 11n60s 11n60 SMD CASE footprint

    IXAN0040

    Abstract: 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES
    Text: COVER STORY IXAN0040 GaAs and SiC devices will find more and more use The IGBT3 technology which combines the trench cell and the field stop concept is successfully GaAs power devices were mainly used up to 300V, while 600V applications like PFC were regarded to be perfectly served by SiC devices. A new generation of 600V GaAs power


    Original     		PDF IXAN0040 D-10997 IXAN0040 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances ID


    Original     		PDF SPW11N60S5 P-TO247 Q67040-S4239 11N60S5

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5, 11N60S5 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262 VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 P-TO220-3-1

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB11N60S5 P-TO263-3-2 SPB11N60S5 Q67040-S4199 11N60S5

    11N60

    Abstract: 11N60S5 SPW11N60S5 Q67040-S4239 11n6 marking code 68W 70
    Text: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


    Original     		PDF SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 11N60 11N60S5 Q67040-S4239 11n6 marking code 68W 70

    11N60S5 equivalent

    Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095
    Text: 11N60S5 Preliminary data 11N60S5, 11N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·


    Original     		PDF SPI11N60S5 SPP11N60S5, SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 equivalent 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06
    Text: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06

    siemens 350 98

    Abstract: 11N60S5 SPW11N60S5
    Text: 11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 siemens 350 98 11N60S5

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge PG-TO262 • Periodic avalanche rated PG-TO220 2 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5
    Text: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPB11N60S5 PG-TO263 Q67040-S4199 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5

    CTX16-16926

    Abstract: FA2443-ALC CTX16-17298 TL1431QDBZ ctx16 SLUU256A FA2443-AL HPA126 panasonic TV flyback transformer Phoenix Passive Components
    Text: UCC28600 120-W Evaluation Module User's Guide October 2006 Power Supply MAN SLUU256A UCC28600 120-W Evaluation Module User's Guide Literature Number: SLUU256A August 2006 – Revised October 2006 User's Guide SLUU256A – August 2006 – Revised October 2006


    Original     		PDF UCC28600 SLUU256A UCC28051 EIC61000-3-2 CTX16-16926 FA2443-ALC CTX16-17298 TL1431QDBZ ctx16 SLUU256A FA2443-AL HPA126 panasonic TV flyback transformer Phoenix Passive Components

    11n60s5

    Abstract: No abstract text available
    Text: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262-3 • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 P-TO220-3-1 PG-TO262-3 PG-TO220-3-1 SPI11N60S5 PG-TO220-3-1 Q67040-S4198 PG-TO262-3 11n60s5

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 P-TO220-3-1 PG-TO262 PG-TO220-3-1 SPI11N60S5 PG-TO220-3-1 Q67040-S4198 PG-TO262

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 11N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/df rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		PDF SPW11N60S5 SPWx2N60S5 11N60S5 P-T0247 11N60S5 Q67040-S4239