Germanium itt
Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
Text: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470
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Original
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P-100
N-1500
N-2200
Germanium itt
thyratron pl 21
Mallory Vibrator Data Book
National Electronics ignitrons
bat CR Li Mn lab test result
Helipot POTENTIOMETER
Bendix Transistors
selenium rectifier westinghouse
5000W AUDIO AMPLIFIER
6cl6
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PDF
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r2a3
Abstract: r1a10 M1367 M4589
Text: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.
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THMY728010BEG-80L
THMY728010BEG
608-word
72-bit
TC59S6408BFTL
72-bit
r2a3
r1a10
M1367
M4589
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PDF
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TLV2272
Abstract: 17PM K011 04V 709 operational amplifier MO-200 TLV2262 TLV2262A TLV2262AID TLV2262AIP TLV2262AIPWLE TLV2262ID
Text: TLV2262, TLV2262A, TLV2262Y Advanced LinCMOS RAIL-TO-RAIL DUAL OPERATIONAL AMPLIFIERS • • • • Output Swing Includes Both Supply Rails Low N oise. . . 12 nV/VHz Typ at f = 1 kHz Low Input Bias C urrent. . . 1 pA Typ
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TLV2262,
TLV2262A,
TLV2262Y
SLOS129B-AUGUST
TLV2262
TLV2262A
-10E6
83E-6
34E-9
TLV2272
17PM K011 04V
709 operational amplifier
MO-200
TLV2262AID
TLV2262AIP
TLV2262AIPWLE
TLV2262ID
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PDF
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AP10A
Abstract: No abstract text available
Text: AN ALO G DEVICES Dual Matched Instrumentation Operational Amplifier 0P-10 FEATURES • • • • • • • • • • • Extremely Tight Matching Excellent Individual Amplifier Parameters Offset Voltage M a tc h .0.18mV Max
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0P-10
114dB
100dB
200Gn
AP10A
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PDF
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p68 SMD
Abstract: ICP-01
Text: PRELIMINARY DATA SHEET ISG1000 5 V CATV MODEM RF RECEIVER stN M m m FEATURES DESCRIPTION AND APPLICATIONS • MCNS COMPLIANT: The ISG1000 is a complete RF receiver designed for use cable modem applications. The receiver integrates a diplex filter, triple conversion receiver and incorporates RF path for exter
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ISG1000
ISG1000
950S4-1817
24-Hour
p68 SMD
ICP-01
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PDF
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ace dm he tv
Abstract: tda 1047 NS16550A TL16C450 TL16C550B
Text: TL16C550B ASYNCHRONOUS COMMUNICATIONS ELEMENT SLLS136A-JANUARY 1994- REVISED MARCH 1996 Capable of Running With All Existing TL16C450 Software After Reset, All Registers Are Identical to the TL16C450 Register Set In the FIFO Mode, Transmitter and Receiver
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TL16C550B
SLLS136A
TL16C450
16-Byte
Tbl724
ace dm he tv
tda 1047
NS16550A
TL16C550B
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PDF
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INTEL I7 microprocessor circuit diagram
Abstract: burndy ms 8255 intel microprocessor architecture burndy N28F020
Text: in t e i, ¡SM002FLKA 2 MBYTE 1024K x 16 CMOS FLASH SIMM • High-Performance — 150 ns Maximum Access Time — 13.3 M B/s Read Transfer Rate ■ Standard 80-Pln Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/
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SM002FLKA
1024K
80-Pln
ISM002FLKA
80-PIN
SM002FLKA-150
ER-20,
ER-24,
INTEL I7 microprocessor circuit diagram
burndy ms
8255 intel microprocessor architecture
burndy
N28F020
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PDF
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Untitled
Abstract: No abstract text available
Text: KM416S1120D CMOS SDRAM 1Mx 16 SDRAM 512 K x 16bit X 2 Banks Synchronous DRAM LVTTL Revision 1.2 March 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 Mar. 1999 ELECTRONiCS KM416S1120D CMOS SDRAM Revision History
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KM416S1120D
16bit
KM416S1120D-Z
125MHz
KM416S1120D-7/8@
416S1120D-6
416S1120D-7
50-TSOP2-400F
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PDF
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LT1086H
Abstract: LT1086CT12 LT1086-5 ct LT1086CT5 12V 20A isolated regulators LT1086IT LT1083 CT t039 package transistor pin mount dual 1038 Transistor LT1086-5
Text: r r w m _ LT1086 Series TECHNOLOGY i,5 A Low D ro p o u t Positive R egulators A d ju s ta b le a n d Fixed 2.85V, 3.3V, 3.6V, 5V, 12V KOTURCS D C S C R IP T IO n • 3-Terminal Adjustable or Fixed 2.85V, 3.3V, 3.6V, 5V, 12V ■ Output Current of 1.5A, 0.5A for LT1086H
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LT1086
LT1086H)
O-220
LT1528
LT1587
434-0507-TELEX:
1086fe
LT1086H
LT1086CT12
LT1086-5 ct
LT1086CT5
12V 20A isolated regulators
LT1086IT
LT1083 CT
t039 package transistor pin mount
dual 1038 Transistor
LT1086-5
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SH IBA THM65V4075BTG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V4075BTG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5165165BFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM65V4075BTG-4
304-WORD
64-BIT
THM65V4075BTG
TC5165165BFT
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PDF
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Untitled
Abstract: No abstract text available
Text: AQZ262,264 PhotoMOS RELAYS POWER PhotoMOS RELAYS High capacity type hi A | S UL File No.: E43149 CSA File No.: LR26550 Max. 9.0 Max. 32.0 mm inch FEATURES 1. High capacity type power photoMOS relay. Can switch a wide range of currents and voltages. Can control various types of
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AQZ262
E43149
LR26550
AQZ262)
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PDF
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Untitled
Abstract: No abstract text available
Text: M OSEL VITELIC V54C316162VA HIGH PERFORMANCE 3.3 VOLT 1 M X 16 SYNCHRONOUS DRAM 2 BANKS X 512Kbit X 16 C AS Latency = 3 PRELIMINARY 8 10 12 System Frequency fCK 125 MHz 100 MHz 83 MHz Clock Cycle Tim e (tcK 3 ) 8 ns 10 ns 12 ns Clock Access Tim e (tAC3)
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V54C316162VA
512Kbit
V54C316162VA
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V54C32816G4VC HIGH PERFORMANCE 166/143 MHz 3.3 V 0 L T 8 M X 16 ENHANCED GRAPHICS SDRAM 4 BANKS X 2M bit X 16 PRELIMINARY 6 7 System Frequency fCK 166 MHz 143 MHz Clock Cycle Tim e (tcK 3 ) 6 ns 7 ns Clock Access Tim e (tAC3) CAS Latency = 3
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V54C32816G4VC
V54C32816G4VC
54-Pin
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PDF
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GPR circuit schematic diagram full
Abstract: SIEMENS 3 TB 40 17 - 0B Siemens Halbleiter Siemens HE 8011 siemens b 58 468 la intel 80 Siemens SAB-C501
Text: Contents General Information Summary of Types incl. Ordering Codes 8-Bit Single-Chip Microcontrollers 16-Bit Single-Chip Microcontrollers Application Notes Instruction Set Summary Hexadecimal Order Package Outlines Summary of Types in Alphanumerical Order
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16-Bit
Ausgabe10
MarketingKommu7-49
GPR circuit schematic diagram full
SIEMENS 3 TB 40 17 - 0B
Siemens Halbleiter
Siemens HE 8011
siemens b 58 468 la intel 80
Siemens SAB-C501
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2sd 209 l
Abstract: semikron skt 513 SKT300 B331 SKT300-08C SKT250 semikron skt 300 B3-28 TO-209 b327
Text: S1E D Ö13bb71 DOOBMfib a 77 s e m ik r g n SEMIKRON INC V rsm Itrm s V rrm iV-dt i/o r V drm maximum values for continuous operation 450 A I 550 A (sin. 180; Tease “ . .°C) 285 A (77 °C) 350 A (85 °C) Ita v V V V/ns 500 400 200 SKT250/04 C SKT300/04 C
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ai3bb71
SKT250/04
SKT250/12
SKT300/04
SKT300/08
B3-30
SKT250
O-209
O-118)
B3-31
2sd 209 l
semikron skt 513
SKT300
B331
SKT300-08C
semikron skt 300
B3-28
TO-209
b327
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2sd 5200
Abstract: SKT300 skt 2500 semikron skt 450 semikron skt 24 SKT250 to-209ad C450A M24-P 2sd 209 l
Text: S1E D Ö13bb71 DOOBMfib a 77 s e m ik r g n SEMIKRON INC V rsm Itrm s V rrm iV-dt i/or V drm maximum values for continuous operation 450 A I 550 A (sin. 180; Tease “ . .°C) 285 A (77 °C) 350 A (85 °C) Ita v V V V/ns 500 400 200 SKT250/04 C SKT300/04 C
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ai3bb71
SKT250/04
SKT250/12
SKT300/04
SKT300/08
2sd 5200
SKT300
skt 2500 semikron
skt 450
semikron skt 24
SKT250
to-209ad
C450A
M24-P
2sd 209 l
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PDF
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RCA-6939
Abstract: rca 6939 TWIN POWER pentode twin pentode tempilaq 6939 6939 tube
Text: 6939 TWIN POWER PENTODE Internally Neutralized for Push-Pull Ampi ifierService RCA-6939 i s a t w i n power p e n t o d e o f t h e 9 - p i n m i n i a t u r e t y p e i n t e n d e d f o r use a s a p u s h - p u l I r f - p o w e r - a m p I i f i e r t u b e o r as a f r e q u e n c y m u i t i p l i e r t u b e in c o m m u n i c a t i o n s e q u i p m e n t
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RCA-6939
rca 6939
TWIN POWER pentode
twin pentode
tempilaq
6939
6939 tube
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM65V4095BTG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V4095BTG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5164165BFT DRAMs on a printed circuit board. This module is optimized for applications which
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OCR Scan
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THM65V4095BTG-4
304-WORD
64-BIT
THM65V4095BTG
TC5164165BFT
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PDF
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VICTOREEN resistor mox 3
Abstract: VICTOREEN MOX ad705j "VICTOREEN" 705J VICTOREEN resistor VICTOREEN AD705 D705B AD705T
Text: A N A LO G D E V IC E S FEATURES DC PERFORMANCE 25 |*V max Offset Voltage AD705T 0.6 |aV/°C max Drift (AD70SK/T) 100 pA max Input Bias Current (AD705K) 250 pA max lB Over MIL Temperature Range (AD705T) 114 dB min CMRR (AD705K/T) 114 dB min PSRR (AD705T)
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AD705T)
AD70SK/T)
AD705K)
AD705K/T)
EIA-481A
MIL-STD-883B
AD706
AD704
VICTOREEN resistor mox 3
VICTOREEN MOX
ad705j
"VICTOREEN"
705J
VICTOREEN resistor
VICTOREEN
AD705
D705B
AD705T
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PDF
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