Untitled
Abstract: No abstract text available
Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D
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SUM110P04-05
O-263
SUM110P04-05-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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sum75n06
Abstract: No abstract text available
Text: SUM75N06-09L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0093 at VGS = 10 V 90 0.0135 at VGS = 4.5 V 62 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT
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SUM75N06-09L
O-263
SUM75N06-09L-E3
10trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sum75n06
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SUM110P06-07L
Abstract: SUM110P06-07L-E3
Text: SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0069 at VGS = - 10 V - 110 0.0088 at VGS = - 4.5 V - 110 VDS (V) - 60 • TrenchFET Power MOSFET • Package with Low Thermal Resistance Available
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SUM110P06-07L
O-263
SUM110P06-07L-E3
08-Apr-05
SUM110P06-07L
SUM110P06-07L-E3
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SUM18N25-165
Abstract: SUM18N25-165-E3
Text: SUM18N25-165 Vishay Siliconix N-Channel 250-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 250 0.165 at VGS = 10 V 18 • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package RoHS COMPLIANT
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SUM18N25-165
O-263
SUM18N25-165-E3
08-Apr-05
SUM18N25-165
SUM18N25-165-E3
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SUM75N06-09L
Abstract: SUM75N06-09L-E3
Text: SUM75N06-09L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0093 at VGS = 10 V 90 0.0135 at VGS = 4.5 V 62 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT
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SUM75N06-09L
O-263
SUM75N06-09L-E3
08-Apr-05
SUM75N06-09L
SUM75N06-09L-E3
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Untitled
Abstract: No abstract text available
Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D
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SUM110P04-05
O-263
SUM110P04-05-E3
25electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM50N03-13LC Vishay Siliconix N-Channel 30-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 50a 0.017 at VGS = 4.5 V 48a • TrenchFET Power MOSFET Plus Current Sensing Diode • Low Thermal Resistance Package
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SUM50N03-13LC
SUM50N03-13LC-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: PBT FLAMMABILITY RATING UL94-V0 COLOUR: PURPLE AND GREEN CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 1500 MATING CYCLES
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UL94-V0
E323964
631-Dual
20-SEP-11
10-AUG-10
19-NOV-09
11-MAR-09
11-FEB-08
05-DEC-07
20-NOV-
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Untitled
Abstract: No abstract text available
Text: SUM110N06-3m4L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0034 at VGS = 10 V 60 0.0041 at VGS = 4.5 V ID (A) • TrenchFET Power MOSFET • 100 % Rg Tested 110a RoHS COMPLIANT D TO-263 G G D S
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O-263
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11-Mar-11
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SUM110N04-05H
Abstract: SUM110N04-05H-E3 73131
Text: SUM110N04-05H Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0053 at VGS = 10 V 110 95 • TrenchFET Power MOSFET • 175 °C Junction Temperature • High Threshold Voltage at High Temperature
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O-263
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08-Apr-05
SUM110N04-05H
SUM110N04-05H-E3
73131
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SUM47N10-24L
Abstract: SUM47N10-24L-E3
Text: SUM47N10-24L Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 47 0.027 at VGS = 4.5 V 44 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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O-263
SUM47N10-24L-E3
08-Apr-05
SUM47N10-24L
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Untitled
Abstract: No abstract text available
Text: SUM75N06-09L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0093 at VGS = 10 V 90 0.0135 at VGS = 4.5 V 62 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT
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SUM75N06-09L
O-263
SUM75N06-09L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM70N04-07L Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0074 at VGS = 10 V 70a 0.011 at VGS = 4.5 V 67 • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Threshold
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SUM70N04-07L
O-263
SUM70N04-07L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM50N03-13LC Vishay Siliconix N-Channel 30-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 50a 0.017 at VGS = 4.5 V 48a • TrenchFET Power MOSFET Plus Current Sensing Diode • Low Thermal Resistance Package
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SUM50N03-13LC-E3
08-Apr-05
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SUM70N04-07L
Abstract: SUM70N04-07L-E3
Text: SUM70N04-07L Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0074 at VGS = 10 V 70a 0.011 at VGS = 4.5 V 67 • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Threshold
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O-263
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18-Jul-08
SUM70N04-07L
SUM70N04-07L-E3
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SUB60N04-15LT
Abstract: LMV321 LMV331 SUM60N04-12LT A2005V
Text: SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic
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SUM60N04-12LT
200lectual
18-Jul-08
SUB60N04-15LT
LMV321
LMV331
A2005V
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2300 MHz 4.5 VDC 2450 Tuning Voltage: MHz 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +2.0 +4.0 +6.0 dBm 29 mA Pushing: 4.0 MHz/V
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10kHz
100kHz
CVCO55BE-2300-2450
11-Feb-08
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Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2650 MHz 4.6 VDC 2800 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -3.0 +3.0 dBm 25 mA Supply Current: nd
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100kHz
CVCO55BE-2650-2800
11-Feb-08
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SUM60N06-15
Abstract: SUM60N06-15-E3
Text: SUM60N06-15 Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 60 0.015 at VGS = 10 V 60a • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Industrial
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O-263
SUM60N06-15-E3
18-Jul-08
SUM60N06-15
SUM60N06-15-E3
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2270 MHz 20.0 VDC 3180 Tuning Voltage: MHz 1.0 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +3.0 +5.0 +7.0 dBm 35 mA Pushing: 10.0
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100kHz
Temperature02)
CVCO55BE-2270-3180
11-Feb-08
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2200 MHz 4.5 VDC 2285 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 25 35 mA Output Power: Supply Current:
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100kHz
CVCO55BE-2200-2285
11-Feb-08
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Untitled
Abstract: No abstract text available
Text: SUM55P06-19L Vishay Siliconix P-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.019 at VGS = - 10 V - 55 0.025 at VGS = - 4.5 V - 48 VDS (V) - 60 Qg (Typ.) • TrenchFET Power MOSFET Available RoHS* 76 COMPLIANT S TO-263
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O-263
SUM55P06-19L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM110N04-2m3L Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0023 at VGS = 10 V 40 0.003 at VGS = 4.5 V ID (A) • TrenchFET Power MOSFET • 100 % Rg Tested 110a RoHS COMPLIANT D TO-263 G G D S
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SUM110N04-2m3L
O-263
SUM110N04-2m3L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM18N25-165 Vishay Siliconix N-Channel 250-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 250 0.165 at VGS = 10 V 18 • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package RoHS COMPLIANT
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SUM18N25-165
O-263
SUM18N25-165-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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