Untitled
Abstract: No abstract text available
Text: TFDU6102 VISHAY Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.7 V to 5.5 V Operation Description Features • Supply voltage 2.7 V to 5.5 V, Operating idle current (receive mode) < 3 mA, Shutdown current < 5 µA over full temperature range
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TFDU6102
D-74025
11-Aug-03
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rc6 protocol
Abstract: TSOPxxxx
Text: TSOP41.SP1 VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP41.SP1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP41.
D-74025
11-Aug-03
rc6 protocol
TSOPxxxx
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DG300A
Abstract: DG300B DG301A DG302A
Text: DG300A_MIL/301A_MIL/302A_MIL Vishay Siliconix CMOS Analog Switches Obsolete for non-hermetic. Use DG300B Series as pin-for-pin replacements. FEATURES BENEFITS APPLICATIONS D D D D D D D Full Rail-to-Rail Analog Signal Range D Low Signal Error D Low Power Dissipation
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DG300A
MIL/301A
MIL/302A
DG300B
MIL/DG301A
MIL/DG302A
S-31622--Rev.
11-Aug-03
DG301A
DG302A
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3161
Abstract: Si7921DN Si7921DN-T1
Text: Si7921DN New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.063 @ VGS = - 10 V - 5.1 0.110 @ VGS = - 4.5 V - 3.8 - 30 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package
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Si7921DN
Si7921DN-T1
S-31613--Rev.
11-Aug-03
3161
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3161
Abstract: Si7911DN Si7911DN-T1
Text: Si7911DN New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKr Package rDS(on) (W) ID (A) 0.051 @ VGS = - 4.5 V - 5.7 APPLICATIONS
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Si7911DN
Si7911DN-T1
S-31612--Rev.
11-Aug-03
3161
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Si7944DP
Abstract: TAG D2 72358
Text: Si7944DP New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V
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Si7944DP
07-mm
Si7944DP-T1
S-31609--Rev.
11-Aug-03
TAG D2
72358
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diode 101a
Abstract: Si7947DP
Text: SPICE Device Model Si7947DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7947DP
0-to-10V
11-Aug-03
diode 101a
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BZX384
Abstract: BZX384B3V6 BZX384C12 D5 VISHAY WL ZENER BZX384C2V4 BZX384C2V7 BZX384C3 BZX384C3V3 BZX384C3V6 BZX384C3V9
Text: BZX384 Series VISHAY Vishay Semiconductors Zener Diodes Features • Silicon Planar Power Zener Diodes • The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance. Other voltage tolerances and
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BZX384
OD-323
30k/box
D-74025
11-Aug-03
BZX384B3V6
BZX384C12 D5
VISHAY WL ZENER
BZX384C2V4
BZX384C2V7
BZX384C3
BZX384C3V3
BZX384C3V6
BZX384C3V9
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Untitled
Abstract: No abstract text available
Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.087 @ VGS = - 4.5 V - 2.7 0.120 @ VGS = - 2.5 V - 2.3 0.165 @ VGS = - 1.8 V - 1.5 D TrenchFETr Power MOSFETS APPLICATIONS D Portable
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Si3973DV
Si3973DV-T1
S-31670--Rev.
11-Aug-03
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Untitled
Abstract: No abstract text available
Text: Si7944DP New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V
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Si7944DP
07-mm
Si7944DP-T1
08-Apr-05
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293D
Abstract: EN60825-1 IEC60825-1 IEC825 TFDU4100 TFDU4100-TR3 TFDU4100-TT3 2t transistor smd
Text: TFDU4100 VISHAY Vishay Semiconductors Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation Description The TFDU4100 is a low - current consumption infrared transceiver module compliant with the IrDA standard for serial infrared SIR data communication,
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TFDU4100
TFDU4100
D-74025
11-Aug-03
293D
EN60825-1
IEC60825-1
IEC825
TFDU4100-TR3
TFDU4100-TT3
2t transistor smd
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CNC CIRCUIT DIAGRAM
Abstract: DG2016DQ DG2026DQ HP4192A MSOP-10 s3157
Text: DG2016/DG2026 New Product Vishay Siliconix High-Bandwidth, Low Voltage, Dual SPDT Analog Switchs FEATURES BENEFITS APPLICATIONS D Single Supply 1.8 V to 5.5 V D Low On-Resistance - rON: 2.4 W D Crosstalk and Off Isolation: -81 dB @ 1 MHz D MSOP-10 Package
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DG2016/DG2026
MSOP-10
DG2016/DG2026
DG201ed
08-Apr-05
CNC CIRCUIT DIAGRAM
DG2016DQ
DG2026DQ
HP4192A
s3157
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SUV90N06-05
Abstract: 3161
Text: SUV90N06-05 New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0052 @ VGS = 10 V 60 90 a 0.0072 @ VGS = 4.5 V APPLICATIONS D Isolated DC/DC Converters - Primary-Side Switch D Automotive - Fan Motors
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SUV90N06-05
O-262
S-31618--Rev.
11-Aug-03
SUV90N06-05
3161
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3161
Abstract: Si7981DP
Text: Si7981DP New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.020 @ VGS = - 4.5 V - 10.9 0.024 @ VGS = - 2.5 V - 10.0 0.033 @ VGS = - 1.8 V - 3.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package
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Si7981DP
07-mm
Si7981DP-T1
S-31611--Rev.
11-Aug-03
3161
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3161
Abstract: Si7971DP
Text: Si7971DP New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) - 12 ID (A) 0.018 @ VGS = - 4.5 V - 11.7 0.022 @ VGS = - 2.5 V - 10.6 0.029 @ VGS = - 1.8 V - 3.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package
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Si7971DP
07-mm
Si7971DP-T1
S-31610--Rev.
11-Aug-03
3161
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3161
Abstract: 5452V SUM70N04-07L
Text: SUM70N04-07L New Product Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0074 @ VGS = 10 V 70 a 0.011 @ VGS = 4.5 V 67 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Low Threshold APPLICATIONS
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SUM70N04-07L
O-263
S-31617--Rev.
11-Aug-03
3161
5452V
SUM70N04-07L
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Untitled
Abstract: No abstract text available
Text: TSOP48.ZC1 VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP48.ZC1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP48.
D-74025
11-Aug-03
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fscm 57489
Abstract: No abstract text available
Text: E/H Vishay Thin Film QPL MIL-PRF-55342 Qualified Thin Film Resistor Chips FEATURES SURFACE MOUNT SURFACE MOUNT CHIPS • Established reliability, “R” failure rate level • High purity alumina substrate for high power Actual Size M55342/02 • Wraparound termination featuring a tenacious adhesion
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MIL-PRF-55342
M55342/02
M55342K06B5E60R
11-Aug-03
fscm 57489
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tpro
Abstract: No abstract text available
Text: TFDU5107 VISHAY Vishay Semiconductors Low Profile Transceiver Module for Telecom Applications 9.6 kbit/s to 1.152 Mbit/s Data Transmission Rate Description The miniaturized TFDU5107 in the well-known Baby Face package is an ideal transceiver for applications
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TFDU5107
TFDU5107
D-74025
11-Aug-03
tpro
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418B
Abstract: 15-V DG417B DG417BDJ DG417BDY DG418B DG418BDJ DG419B DG419BDQ
Text: DG417B/418B/419B New Product Vishay Siliconix Precision CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D "15-V Analog Signal Range On-Resistance—rDS on : 15 W Fast Switching Action—tON: 100 ns TTL and CMOS Compatible
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DG417B/418B/419B
DG417B/418B/419B
S-31538--Rev.
11-Aug-03
DG417B/418B
HP4192A
DG419B
418B
15-V
DG417B
DG417BDJ
DG417BDY
DG418B
DG418BDJ
DG419B
DG419BDQ
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DG300A
Abstract: DG300B DG301A DG302A
Text: DG300A_MIL/301A_MIL/302A_MIL Vishay Siliconix CMOS Analog Switches Obsolete for non-hermetic. Use DG300B Series as pin-for-pin replacements. FEATURES BENEFITS APPLICATIONS D D D D D D D Full Rail-to-Rail Analog Signal Range D Low Signal Error D Low Power Dissipation
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DG300A
MIL/301A
MIL/302A
DG300B
MIL/DG301A
MIL/DG302A
08-Apr-05
DG301A
DG302A
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Untitled
Abstract: No abstract text available
Text: Si1433DH New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.150 @ VGS = - 10 V - 2.2 0.260 @ VGS = - 4.5 V - 1.6 APPLICATIONS
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Si1433DH
SC-70
OT-363
SC-70
Si1433DH-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: 4 3 2 1 S DRAWING IS UNPUBLISHED. CM 00 0 ELECTRONICS CORPORATION. DESCRIPTION REV PER ECN 0 G 3 B -0 5 0 6 - 0 3 11AUG03 SC CJ 0 . 0 0 0 7 6 1 . 0 0 0 0 3 0 ] MI N G O L D. AT P O I N T OF M E A S U R E M E N T IN T H E L 0 C A L IJZ 2 ED GOL D PL ATE A R E A , 0 . 0 0 1 2 7 [ . 0 0 0 0 5 0 ] MI N T I N - L E A D IN
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0G3B-0506-03
11AUG03
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Untitled
Abstract: No abstract text available
Text: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — 2 - LOC ALL RIGHTS RESERVED. CM DIST R E V IS IO N S 00 LTR K DESCRIPTION DATE 22SEP05 EC 0G3B 0215 05 DWN APVD BSV RCJ 0 . 0 0 0 7 6 [ . 0 0 0 0 3 0 ] MI N G O L D A T P O I N T O F
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22SEP05
11AUG03
31MAR2000
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