113 SOT Search Results

113 SOT Result Highlights (5)

Part	Manufacturer	Description
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)

113 SOT Price and Stock

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Linear Integrated Systems SST113-SOT-23-3L-ROHS JFET N-CH 35V SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SST113-SOT-23-3L-ROHS	Cut Tape	7,194		1	1 $3.4 10 $2.344 100 $3.4 1000 $1.3875 10000 $1.3875	Buy Now
	SST113-SOT-23-3L-ROHS	Digi-Reel	7,194		1	1 $3.4 10 $2.344 100 $3.4 1000 $1.3875 10000 $1.3875	Buy Now
	SST113-SOT-23-3L-ROHS	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.3875	Buy Now
Renesas Electronics Corporation ISL28113SOT23EVAL1Z EVALUATION BOARD FOR ISL28113
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL28113SOT23EVAL1Z	Box			1	1 $68.75 10 $68.75 100 $68.75 1000 $68.75 10000 $68.75	Buy Now
Avnet Americas	ISL28113SOT23EVAL1Z	Box		18 Weeks	1	1 $61.11111 10 $61.11111 100 $61.11111 1000 $61.11111 10000 $61.11111	Buy Now
Mouser Electronics	ISL28113SOT23EVAL1Z					1 $69.43 10 $69.43 100 $69.43 1000 $69.43 10000 $69.43	Get Quote
Linear Integrated Systems SST113-SOT-23 N-CH JFET Switches
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NAC	SST113-SOT-23	Reel	14,540		1	1 $1.62 10 $1.62 100 $1.54 1000 $1.47 10000 $1.47	Buy Now

113 SOT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
copper bonding wire Abstract: No abstract text available Text: PCN #: 113 Notification Date: 25 May 2010 mailto:[email protected] http://www.centralsemi.com/processchange Process Change Notice Parts Affected: All discrete semiconductor devices manufactured in the SOD-123, SOT-23, and SOT-323 packages. Extent of Change:	Original	PDF	OD-123, OT-23, OT-323 copper bonding wire
Untitled Abstract: No abstract text available Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4	Original	PDF	MMBT1815 150mA MMBT1015 OT-113 QW-R210-004
Untitled Abstract: No abstract text available Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High Hfe linearity Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR	Original	PDF	MMBT1015 150mA MMBT1815 OT-113 QW-R210-003
MMBT1015 Abstract: MMBT1815 Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4	Original	PDF	MMBT1815 150mA MMBT1015 OT-113 QW-R210-004 MMBT1015
Untitled Abstract: No abstract text available Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High Hfe linearity Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR	Original	PDF	MMBT1015 150mA MMBT1815 OT-113 QW-R210-003
SMD IC sot23-5 5K Abstract: No abstract text available Text: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz PIN CONNECTIONS top view LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE	Original	PDF	TSH110-111-112-113-114 100MHz OT23-5, TSH110 OT23-5 TSH111 TSH110 TSH111, TSH112, TSH113 SMD IC sot23-5 5K
TSH110 Abstract: TSH111 TSH112 TSH113 TSH114 TSSOP14 TSH110-TSH111-TSH112-TSH113-TSH114 Text: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz PIN CONNECTIONS top view LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE	Original	PDF	TSH110-111-112-113-114 100MHz TSH110 OT23-5 OT23-5, TSH111 TSH110 TSH111, TSH112, TSH113 TSH111 TSH112 TSH114 TSSOP14 TSH110-TSH111-TSH112-TSH113-TSH114
PHP18NQ10T Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341 Text: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America	Original	PDF	M3D306 O220AB O220AC O22OAB 30EX-150 BYQ30EX-200 BYV32EX-150 BYV42EX-150 BYV32EX-200 BYV42EX-200 PHP18NQ10T PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
identification code c3 SOT23-5 Abstract: TSH110 TSH111 TSH112 TSH113 TSH114 TSSOP14 Text: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE SLEW-RATE: 450V/µs	Original	PDF	TSH110-111-112-113-114 100MHz TSH110 OT23-5 OT23-5, TSH111 TSH110 TSH111, TSH112, TSH113 identification code c3 SOT23-5 TSH111 TSH112 TSH114 TSSOP14
BT148 Abstract: thyristor 12V it 1A BT148-400 Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company THYRISTOR BT148- 400 TO-126 Plastic Package For use in General Purpose Switching and Phase Control Applications ABSOLUTE MAXIMUM RATINGS PARAMETER VALUE UNIT 400 V half sine wave, Tmb < 113ºC	Original	PDF	ISO/TS16949 BT148- O-126 C-120 Rev150404E BT148 thyristor 12V it 1A BT148-400
IEC-870-5-103 Abstract: MSTB 2.5 -5.08 084-CA MINIATURE CIRCUIT BREAKER Breaking capacity abb Text: 3URWHFW,7 %UHDNHU SURWHFWLRQ DQG FRQWURO WHUPLQDO 5 % & 1MRK 505 113-BEN Page 1 Revision: – Issued: October 2003 Data subject to change without notice HDWXUHV • Pre-configured protection terminal for costeffective engineering and commissioning	Original	PDF	113-BEN 114-UEN 115-UEN 116-UEN 117-UEN 009-BEN 112-BEN SE-721 IEC-870-5-103 MSTB 2.5 -5.08 084-CA MINIATURE CIRCUIT BREAKER Breaking capacity abb
SOT23-6 Abstract: 02 SOT23-6 Text: SOT23-6 Thermal Resistance and Derating Information SOT23-6 1.1W devices j-a=113°C/W Maximum Mounted on a FR4 p.c.b. of 50mm x 50mm 2"x2" connected using 25mm x 0.5mm copper wire 100 80 60 D=0.5 40 D=0.2 Single Pulse 20 D=0.05 D=0.1 100µ 1m 10m 100m 1	Original	PDF	OT23-6 OT23-6 SOT23-6 02 SOT23-6
newark Abstract: L054BT26 15KV LR052BT14 Text: E L E C T R O N I C ESD Protector Application Friday, 18 July 2008 Sirectifier Global Corp., Delaware, U.S.A. Sales Representatives: U.S.A. 113 Barksdale Professional Center in the City of Newark, County of New Castle, Delaware e-mail: [email protected] China Room 320, Building Chaohui,	Original	PDF	L054BT26 newark L054BT26 15KV LR052BT14
Untitled Abstract: No abstract text available Text: LF PA K 56 BUK7Y113-100E N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101	Original	PDF	BUK7Y113-100E LFPAK56

Untitled Abstract: No abstract text available Text: LF PA K 56 BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use	Original	PDF	BUK9Y113-100E LFPAK56
BTS 129 Abstract: BTS 240 tle 4214 BSP 452 bts 550 BTS 721-L1 BTS 740 s2 bts555p bts 2 2 2 N1 5226 Text: Overview Low Side Switches in Smart SIPMOS or Smart Power Technology RON mΩ 1 Channel 2 Channel 4 Channel 2 x 800 4 x 8000 500 TLE 5212 G BSP 75 400 TLE 5216 G 2 x 350 2 x 200 TLE 5226 G TLE 5227 G 250 TLE 4224-2 200 BTS 110 170 150 BTS 113 A BTS 112 A	Original	PDF	410x2 432x2 442x2 BTS 129 BTS 240 tle 4214 BSP 452 bts 550 BTS 721-L1 BTS 740 s2 bts555p bts 2 2 2 N1 5226
SKH122 Abstract: SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v Text: INDEX Order Code Description Manufacturer 688-113 688-125 688-405 688-137 688-149 688-101 743-471 548-613 548-625 — — — — — — 795-987 670-820 — — — — — 663-335 663-293 795-331 687-625 794-788 794-776 796-413 795-422 795-410 795-483 796-300	Original	PDF	SAB-C505C-LM: SAB-C515C-LM: SAB-C167CR-LM: 16-bit SAE81C90-N: SAE81C91-N: SAB-C504-LM: BTS149: BSP350: BSP452: SKH122 SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v
transistor fp 1016 Abstract: BFQ34T ON4497 FP 801 UBB361 Text: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The	OCR Scan	PDF	ON4497) BFQ34T transistor fp 1016 BFQ34T ON4497 FP 801 UBB361
Untitled Abstract: No abstract text available Text: 113 Surface M ount Devices Zener Diodes, SOT-23 350mW , Pinout H (cont.) Zener Impedance ^Z (Nom)* @ IZT lR (Max) Temperature Coefficient Zzk (Max) Zr t (Max) *ZK= 0-25mA @VR Type (V) @ <z (mA) ft (mA) (ft) 0vz (Max) (%/°C) (txA) (V) PMBZ5241B PMBZ5242B	OCR Scan	PDF	OT-23 350mW) 0-25mA PMBZ5241B PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B
apx transistor Abstract: No abstract text available Text: • bbS3T31 00Z353T 113 ■ APX Philips Semiconductors_ N APIER PHILIPS/ DISCR ETE b?E D BF545A; BF545B; BF545C N-channel silicon junction field-effect transistor FEATURES Product specification QUICK R EFER EN CE DATA MAX. UNIT “ 30 V BF545A	OCR Scan	PDF	bbS3T31 00Z353T BF545A; BF545B; BF545C BF545A BF545B apx transistor
digital countdown timer Abstract: countdown timer programmable timer for appliances digital count up and countdown timer 4-digit lcd 6.4mm Text: SÌ R Neuu Series' Of LCD Digital Countdoujn/Countup Timers For Multi-applications Model: TR 119 LCD Countdown/ Countup Timers Clock Model: TRI 18 2 Channel Jumbo display Timer Clock Specifications: M O DEL TR 112/TR 113 • 4-digit display countdown timer	OCR Scan	PDF	112/TR 70mmx73mmx digital countdown timer countdown timer programmable timer for appliances digital count up and countdown timer 4-digit lcd 6.4mm
Untitled Abstract: No abstract text available Text: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.	OCR Scan	PDF	Q0EMS73 bbS3031 003457b
Untitled Abstract: No abstract text available Text: PART NUMBER REV. LDD —S M C 3 0 0 8 R I —SOTR B UNCONTROLLED DOCUMENT 3,75 [0,148] — 000.90 [00,035] 20 PLS. 20 REV. A B 0,80 [0,032] 11 m V m m m m m m m t h E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #113 39 & 11373. E.C.N. #11446. DATE 12.04.06.	OCR Scan	PDF	LDD-SMC3008RI-SOTR 100juA
BB453 Abstract: BF5458 D103D BF545A BF545B BF545C MSB003 UBB467 SFs SOT23 dk transistor Text: • P h i l i p bb53T31 002355^ 113 ■ APX p Product specification N-channel silicon junction field-effect transistor FEATURES N AriER b «>■£/« BF545Aî BF545Bî BF545C QUICK REFERENCE DATA • Low leakage level typ. 500 fA • High gain ±vDS • Low cut-off voltage (max. 2.2 V	OCR Scan	PDF	BF545Ai BF545B5 BF545C BF545A) BF545A BF545A BF545B MBB471 BB453 BF5458 D103D BF545C MSB003 UBB467 SFs SOT23 dk transistor

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113 SOT Search Results

113 SOT Result Highlights (5)

113 SOT Price and Stock

Linear Integrated Systems SST113-SOT-23-3L-ROHS

Renesas Electronics Corporation ISL28113SOT23EVAL1Z

Linear Integrated Systems SST113-SOT-23

113 SOT Datasheets Context Search

copper bonding wire

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Untitled

MMBT1015

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SMD IC sot23-5 5K

TSH110

PHP18NQ10T

identification code c3 SOT23-5

BT148

IEC-870-5-103

SOT23-6

newark

Untitled

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BTS 129

SKH122

transistor fp 1016

Untitled

apx transistor

digital countdown timer

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Untitled

BB453