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    110A 55V Search Results

    110A 55V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP109N055PUK-E2-AY Renesas Electronics Corporation Nch Single Power MOSFET 55V 110A 2.2mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation
    NP109N055PUK-E1-AY Renesas Electronics Corporation Nch Single Power MOSFET 55V 110A 2.2mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation
    NP110N055PUK-E2-AY Renesas Electronics Corporation Nch Single Power MOSFET 55V 110A 1.75mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation
    NP110N055PUK-E1-AY Renesas Electronics Corporation Nch Single Power MOSFET 55V 110A 1.75mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation
    TK110A65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 24 A, 0.11 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    110A 55V Price and Stock

    TE Connectivity V23050-A1110-A542

    Safety Relays 4-NO 2-NC 110VDC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics V23050-A1110-A542 242
    • 1 $27.81
    • 10 $22.46
    • 100 $21.44
    • 1000 $21.44
    • 10000 $21.44
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    TE Connectivity V23050-A1110-A533

    Safety Relays SCHRACK RELAY
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    Mouser Electronics V23050-A1110-A533 125
    • 1 $30.43
    • 10 $26.37
    • 100 $22.2
    • 1000 $20.84
    • 10000 $20.84
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    TE Connectivity V23047-A1110-A501

    Safety Relays V23047-A1110-A501 RELAYS
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    Mouser Electronics V23047-A1110-A501 119
    • 1 $19.47
    • 10 $18.76
    • 100 $13.99
    • 1000 $10.76
    • 10000 $10.76
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    TE Connectivity V23050-A1110-A551

    Safety Relays SCHRACK RELAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics V23050-A1110-A551 14
    • 1 $22.84
    • 10 $22.17
    • 100 $20.6
    • 1000 $20.6
    • 10000 $20.6
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    TE Connectivity V23047-A1110-A511

    Safety Relays V23047-A1110-A511
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics V23047-A1110-A511 8
    • 1 $16.7
    • 10 $16.27
    • 100 $12.18
    • 1000 $10.76
    • 10000 $10.76
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    110A 55V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA110N055T2 IXTP110N055T2 VDSS ID25 = 55V = 110A Ω ≤ 6.6mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55


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    IXTA110N055T2 IXTP110N055T2 O-263 110N055T2 PDF

    UF3205L

    Abstract: 110A 55V
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial


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    UF3205 UF3205 146nC UF3205L-TA3-T UF3205G-TA3-T UF3205L-TQ2-T UF3205G-TQ2-T UF3205L-TQ2-R UF32ues QW-R502-304 UF3205L 110A 55V PDF

    IRF1010

    Abstract: IRF3205P
    Text: PD-94791B IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description


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    PD-94791B IRF3205PbF O-220 O-220AB IRF1010 IRF3205P PDF

    uf3205

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial applications at power


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    UF3205 UF3205 146nC UF3205L-TA3-T UF3205G-TA3-Tat QW-R502-304 PDF

    AN-994

    Abstract: IRF3205 IRF3205L
    Text: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†


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    1304B IRF3205S/L IRF32305S) IRF3205L) AN-994 IRF3205 IRF3205L PDF

    IRF3205 equivalent

    Abstract: IRF3205 application datasheet for IRF3205 IRF3205 ups IRF3205 irf3205 DRIVER irf3205 mosfet transistor marking F53 AN-994 IRF3205L
    Text: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†


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    1304B IRF3205S/L IRF32305S) IRF3205L) IRF3205 equivalent IRF3205 application datasheet for IRF3205 IRF3205 ups IRF3205 irf3205 DRIVER irf3205 mosfet transistor marking F53 AN-994 IRF3205L PDF

    IRF3205S

    Abstract: IRF3205 irf 146 transistor 107A equivalent irf320 AN-994 IRF3205L IRF530S
    Text: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description


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    4149A IRF3205S IRF3205L EIA-418. IRF3205S IRF3205 irf 146 transistor 107A equivalent irf320 AN-994 IRF3205L IRF530S PDF

    AN-994

    Abstract: IRF3205L IRF3205S IRF530S
    Text: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description


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    4149A IRF3205S IRF3205L EIA-418. AN-994 IRF3205L IRF3205S IRF530S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description


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    4149A IRF3205S IRF3205L EIA-418. PDF

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 55V / 110A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY110N06T 55V, RDS(ON)=5.5mW@VGS=10V, ID=30A


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    HY110N06T O-220AB 2002/95/EC O-220AB 250mA 125oC -55oC 11-May-2012 PDF

    IRF3205 application

    Abstract: irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2
    Text: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†


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    1304B IRF3205S/L IRF32305S) IRF3205L) IRF3205 application irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2 PDF

    IRF3205

    Abstract: IRF3205 IR IRF3205 E irf737
    Text: PD - 9.1279D IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A… S Description Fifth Generation HEXFETs from International Rectifier


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    1279D IRF3205 O-220 IRF1010 IRF3205 IRF3205 IR IRF3205 E irf737 PDF

    irf3205 DRIVER

    Abstract: No abstract text available
    Text: PD-91279E IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International


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    PD-91279E IRF3205 O-220 irf3205 DRIVER PDF

    f1010e

    Abstract: IRFP064N
    Text: PD - 9.1383A IRFP064N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A† S Description Fifth Generation HEXFETs from International Rectifier


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    IRFP064N O-247 f1010e IRFP064N PDF

    IRF3205SPBF

    Abstract: AN-994 IRF3205L IRL3103L IRF3205LPbF
    Text: PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A…


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    IRF3205SPbF IRF3205LPbF EIA-418. IRF3205SPBF AN-994 IRF3205L IRL3103L IRF3205LPbF PDF

    irf3205pbf

    Abstract: IRF3205#PBF IRF32
    Text: PD-94791A IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description


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    PD-94791A IRF3205PbF O-220 irf3205pbf IRF3205#PBF IRF32 PDF

    IRF1010

    Abstract: No abstract text available
    Text: PD-94791 IRF3205PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A S Description Advanced HEXFET® Power MOSFETs from International


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    PD-94791 IRF3205PbF O-220 O-220AB IRF1010 IRF1010 PDF

    SSF*5508

    Abstract: SSF5508 57AVDD pn junction diode 110A 55V 68A diode N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
    Text: SSF5508 Feathers: ID =110A „ Advanced trench process technology BV=55V „ Ultra low Rdson, typical 6mohm Rdson=4.5 mΩ typ. „ High avalanche energy, 100% test „ Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high


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    SSF5508 SSF5508 SSF*5508 57AVDD pn junction diode 110A 55V 68A diode N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFETÆ Power MOSFET D VDSS = 55V RDS on = 8.0m! G ID = 110A…


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    IRF3205SPbF IRF3205LPbF moun00 EIA-418. PDF

    MTN3205E3

    Abstract: marking 66a IAS-100 N3205
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN3205E3 Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 1/8 BVDSS RDSON Max ID 55V 8 mΩ 110A Description The MTN3205E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best


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    MTN3205E3 C444E3 MTN3205E3 O-220 O-220e UL94V-0 marking 66a IAS-100 N3205 PDF

    mosfet 3205

    Abstract: 3205 MOSFET lbf 3205 mosfet vds25v ID 62A vds25v ID 62A
    Text: E HEXFET Advanced Process Technology 3205 Power MOSFET VDSS = 54 V Ultra Low On-Resistance Dynamic dv/dt Rating ID25 = 110A 175°C Operating Temperature Fast Switching Fully Avalanche Rated RDS ON = 0.009 Ω Description Advanced HEXFET® Power MOSFETs from International


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    O-220 07A/s, mosfet 3205 3205 MOSFET lbf 3205 mosfet vds25v ID 62A vds25v ID 62A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94791B IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description


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    PD-94791B IRF3205PbF O-220 O-220AB PDF

    UMOS-4

    Abstract: 25V 55A to-252
    Text: NP Series Super-Low-RDS ON MOSFETs Description With innovative fabrication process and advanced packaging, the NP Series MOSFETs feature super-low on-resistance—among the lowest in the industry in their class. With VDSS rated at 30, 40 and 55V, along with a current spec of 110A, the three members of


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    PDF

    f1010e

    Abstract: IRFP064N irf3205 DRIVER for IRF3205 IRF3205 IRF3205 equivalent IRFP064N equivalent 11V16 Mosfet IRFP064N
    Text: PD - 9.1383A IRFP064N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A† S Description Fifth Generation HEXFETs from International Rectifier


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    IRFP064N O-247 f1010e IRFP064N irf3205 DRIVER for IRF3205 IRF3205 IRF3205 equivalent IRFP064N equivalent 11V16 Mosfet IRFP064N PDF