AO4705
Abstract: AO4705L
Text: AO4705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4705 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC
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AO4705
AO4705
AO4705L
AO4705L
0E-01
0E-02
0E-03
0E-04
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GF4810
Abstract: MOSFET with Schottky Diode
Text: GF4810 N-Channel MOSFET & Schottky Diode MOSFET: VDS 30V RDS ON 13.5mΩ ID 10A Schottky: VR 30V VF 0.53V IF 4.0A SO-8 0.197 (5.00) 0.189 (4.80) 5 8 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 4 1 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) H C N TREENFET oduct
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GF4810
GF4810
MOSFET with Schottky Diode
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Alpha Products
Abstract: ao4703 10A Schottky mosfet with schottky body diode
Text: AO4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4703 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC
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AO4703
AO4703
AO4703L
AO4703L
Alpha Products
10A Schottky
mosfet with schottky body diode
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Untitled
Abstract: No abstract text available
Text: AP6950GMT-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE D1 ▼ Simple Drive Requirement ▼ Easy for Synchronous Buck CH-1 G1 Converter Application ▼ RoHS Compliant & Halogen-Free D2/S1 CH-2 G2 Description
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AP6950GMT-HF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT4810D Power MOSFET N-CHANNEL 30-V D-S MOSFET WITH SCHOTTKY DIODE DESCRIPTION SOP-8 As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge features. And it can be used in such applications:
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UT4810D
UT4810D
UT4810DG-S08-R
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AP-692
Abstract: AP6923
Text: AP6923GMT-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE D1 ▼ Simple Drive Requirement ▼ Easy for Synchronous Buck CH-1 G1 Converter Application ▼ RoHS Compliant & Halogen-Free D2/S1 CH-2 G2 Description
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AP6923GMT-HF
AP-692
AP6923
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Untitled
Abstract: No abstract text available
Text: AP6923GMT-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE D1 Simple Drive Requirement Easy for Synchronous Buck CH-1 G1 Converter Application RoHS Compliant & Halogen-Free D2/S1 CH-2 G2 Description S2 Advanced Power MOSFETs from APEC provide
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AP6923GMT-HF
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ap4810
Abstract: No abstract text available
Text: AP4810GSM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement D D ▼ Good Recovery Time D D G S 30V RDS ON 13.5mΩ ID ▼ Fast Switching Performance SO-8 BVDSS 11A S S D Description Advanced Power MOSFETs from APEC provide the
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AP4810GSM
100us
100ms
ap4810
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ap4810
Abstract: No abstract text available
Text: AP4810GSM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE Simple Drive Requirement BVDSS D D Good Recovery Time RDS ON D D Fast Switching Performance ID G SO-8 S 30V 13.5m 11A S S D Description Advanced Power MOSFETs from APEC provide the
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AP4810GSM
ap4810
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Si4810DY
Abstract: No abstract text available
Text: SPICE Device Model Si4810DY N-Channel 30-V D-S Rated MOSFET + Schottky Diode Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range
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Si4810DY
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ap4810
Abstract: AP4810GSM
Text: AP4810GSM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement D D ▼ Good Recovery Time D D G S 30V RDS ON 13.5mΩ ID ▼ Fast Switching Performance SO-8 BVDSS 11A S S D Description Advanced Power MOSFETs from APEC provide the
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AP4810GSM
4810GSM
ap4810
AP4810GSM
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AON7704
Abstract: Design with PIN diode alpha 30v 10a smps diode fr 202 DSA0021
Text: AON7704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON7704/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AON7704
AON7704/L
AON7704
Design with PIN diode alpha
30v 10a smps
diode fr 202
DSA0021
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static characteristics of mosfet
Abstract: MOSFET dynamic parameters 5V GATE TO SOURCE VOLTAGE MOSFET mosfet with schottky body diode power mosfet 500 A POWER MOSFET Rise Time 1 ns schottky diode 100A 10A Schottky all mosfet equivalent book ut4810d-s08-r
Text: UNISONIC TECHNOLOGIES CO., LTD UT4810D Power MOSFET N-CHANNEL 30-V D-S MOSFET WITH SCHOTTKY DIODE DESCRIPTION SOP-8 As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge features. And it can be used in such applications:
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UT4810D
UT4810D
UT4810DL
UT4810DG
UT4810D-S08-R
UT4810D-S08-T
UT4810DL-S08-R
UT4810DL-S08-T
QW-R502-252
static characteristics of mosfet
MOSFET dynamic parameters
5V GATE TO SOURCE VOLTAGE MOSFET
mosfet with schottky body diode
power mosfet 500 A
POWER MOSFET Rise Time 1 ns
schottky diode 100A
10A Schottky
all mosfet equivalent book
ut4810d-s08-r
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FDS6690AS equivalent
Abstract: FDS6690AS FDS6690A Schottky
Text: FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690AS
FDS6690AS
FDS6690A
FDS6690AS equivalent
Schottky
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Untitled
Abstract: No abstract text available
Text: FDS6690AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690AS
FDS6690AS
FDS6690A
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FDS6690AS
Abstract: FDS6690AS equivalent FDS6690A 10a45
Text: tm FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690AS
FDS6690AS
FDS6690A
FDS6690AS equivalent
10a45
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Untitled
Abstract: No abstract text available
Text: tm FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690AS
FDS6690AS
FDS6690A
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Untitled
Abstract: No abstract text available
Text: PD- 95272 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output • Low Conduction Losses Co-Packaged • Low Switching Losses • Low Vf Schottky Rectifier • Lead-Free IRF7335D1PbF
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IRF7335D1PbF
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IRF7335D1
Abstract: No abstract text available
Text: PD- 94546 IRF7335D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode
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IRF7335D1
IRF7335D1
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FDS6690AS equivalent
Abstract: fds6690as diode MARKING A1 FDS6690AS-NL
Text: tm FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690AS
FDS6690AS
FDS6690A
FDS6690AS equivalent
diode MARKING A1
FDS6690AS-NL
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st 95160
Abstract: No abstract text available
Text: PD- 95160 IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free Description FETKY MOSFET & Schottky Diode 1 8 K A 2 7 K S
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IRF5803D2PbF
EIA-481
EIA-541.
st 95160
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Untitled
Abstract: No abstract text available
Text: PD- 95160A IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4
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5160A
IRF5803D2PbF
EIA-481
EIA-541.
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IRF7807D1
Abstract: No abstract text available
Text: PD- 95160A IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4
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5160A
IRF5803D2PbF
EIA-481
EIA-541.
IRF7807D1
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nc10g
Abstract: No abstract text available
Text: v G eneral S e m ic o n d u c t o r _ GF4810 N-Channel MOSFET & Schottky Diode MOSFET:Vd s 30V RdS ON 13.5mQ Id 10A Schottky: V r 30V V f 0.53V If 4.0A • # SO-8 ft R 0.189 (4.80) u_o 0.157(3.99,1 0.150 0.244 (6.2P) 0.228 (5.79) I HTU -u r s it i Dim ensions in inches
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GF4810
nc10g
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