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    AN609

    Abstract: No abstract text available
    Text: Si5519DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si5519DU AN609 10-Oct-07

    AN609

    Abstract: SQ9945AEY
    Text: SQ9945AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF SQ9945AEY AN609 10-Oct-07

    4392

    Abstract: AN609 SUM70N03-09CP
    Text: SUM70N03-09CP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF SUM70N03-09CP AN609 10-Oct-07 4392

    AN609

    Abstract: SUM60N10-17
    Text: SUM60N10-17_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF SUM60N10-17 AN609 10-Oct-07

    3381

    Abstract: U 1560 AN609 Si7156DP 125-88-9
    Text: Si7156DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si7156DP AN609 10-Oct-07 3381 U 1560 125-88-9

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3600 MHz 3800 MHz Tuning Voltage: 0.5 4.5 VDC Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -2.0 +1.0 +4.0 dBm Supply Current: 15 25 Harmonic Suppression 2nd Harmonic : -15 Pushing:


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    PDF 10kHz 100kHz CVCO55XX CVCO55BH-3600-3800 10-Oct-07

    ASTM d792

    Abstract: ASTM d792-66
    Text: RHW Heat-Shrinkable, Heavy Wall, Polyolefin Tubing Table 1: Dimensions Minimum Expanded I.D. D Size 9/3 13/4 20/6 33/8 43/12 51/16 70/21 85/25 105/30 130/36 160/50 180/50 In. .354 .512 .787 1.299 1.693 2008 2.756 3.346 4.134 5.118 6.299 7.087 Maximum Recovered


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    PDF D2240 D2671 D2671, DI000 D1002 10-Oct-07 ASTM d792 ASTM d792-66

    Untitled

    Abstract: No abstract text available
    Text: IHLP-1616BZ-01 Vishay Dale Low Profile, High Current Inductor FEATURES • Shielded construction • Frequency range up to 5.0 MHz RoHS • Lowest DCR/µH, in this package size COMPLIANT • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction


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    PDF IHLP-1616BZ-01 25ded 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: MAX UNITS 225 MHz 6.5 VDC Upper Frequency: 425 Tuning Voltage: 0.5 Supply Voltage: 6.75 7.0 7.25 VDC +3.0 +6.0 dBm 5 15 Output Power: Supply Current: MHz mA Harmonic Suppression 2nd Harmonic : -15 Pushing:


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    PDF 10kHz 100kHz CVCO55XX CVCO55CL-0225-0425 10-Oct-07

    AN609

    Abstract: SUM60P05-11LT SUM60P05
    Text: SUM60P05-11LT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF SUM60P05-11LT AN609 10-Oct-07 SUM60P05

    sum65n20 datasheet

    Abstract: AN609 SUM65N20-30
    Text: SUM65N20-30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF SUM65N20-30 AN609 10-Oct-07 sum65n20 datasheet

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: MAX UNITS 640 MHz 4.7 VDC Upper Frequency: 690 Tuning Voltage: 0.3 MHz Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +5.0 dBm +6.5 +8.0 Supply Current: 15 25 Harmonic Suppression 2nd Harmonic : -12 Pushing:


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    PDF 10kHz 100kHz CVCO55XX CVCO55BE-0640-0690 10-Oct-07

    optocoupler 8178

    Abstract: DIL400-4 DIL300-8 DIL300-16 DIL300-4 DIL300-6 DIL400-6
    Text: Packages Vishay Semiconductors Packages DIL300-16, PACKAGE DIMENSIONS in millimeters < 20 3.6 ± 0.1 7.62 nom. 6.3 ± 0.1 3.3 4.4 ± 0.2 19.7 ± 0.2 5 0.25 ± 0.0 0.53 ± 0.05 9 ± 0.8 1.32 ± 0.05 2.54 nom. 7 x 2.54 = 17.78 16 15 14 13 12 11 10 9 Weight: ca. 1.08 g


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    PDF DIL300-16, DIL300-4, i178044 10-Oct-07 optocoupler 8178 DIL400-4 DIL300-8 DIL300-16 DIL300-4 DIL300-6 DIL400-6

    SUM75N04

    Abstract: 74257 AN609 SUM75N04-05L 37662
    Text: SUM75N04-05L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF SUM75N04-05L AN609 10-Oct-07 SUM75N04 74257 37662

    marking A97

    Abstract: AN 1515 AN1515 AN-1515 A Comprehensive Study of the Howland Current AN1515 Howland National
    Text: LMV841/LMV842/LMV844 CMOS Input, RRIO, Wide Supply Range Operational Amplifiers General Description Features The LMV841/LMV842/LMV844 are low-voltage and low-power operational amplifiers that operate with supply voltages ranging from 2.7V to 12V and have rail-to-rail input and output


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    PDF LMV841 LMV842 LMV844 LMV841/LMV842/LMV844 14-Pin marking A97 AN 1515 AN1515 AN-1515 A Comprehensive Study of the Howland Current AN1515 Howland National

    TSOT-23

    Abstract: TSOT23
    Text: CAT6221 300mA CMOS Dual LDO Regulator FEATURES DESCRIPTION „ Two outputs with guaranteed 300mA peak output current The 300mA CMOS Dual LDO CAT6221 combines in a single TSOT-23 6-lead package two low dropout regulators LDO , each with its own enable pin.


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    PDF CAT6221 300mA 210mV 300mA TSOT-23 CAT6221 300mA. TSOT23

    CAT5419

    Abstract: CAT5419WI-10-T1 CAT5419WI-25-T1 CAT5419YI-25-T2 MS-013
    Text: CAT5419 Dual Digitally Programmable Potentiometers DPP with 64 Taps and 2-wire Interface FEATURES DESCRIPTION „ Two linear-taper digital potentiometers The CAT5419 is two Digitally Programmable Potentiometers (DPP™) integrated with control logic and 16 bytes of NVRAM memory.


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    PDF CAT5419 CAT5419 MD-2115 CAT5419WI-10-T1 CAT5419WI-25-T1 CAT5419YI-25-T2 MS-013

    Frequency Control Products

    Abstract: CB2V
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book FREQUENCY CONTROL PRODUCTS vishay DALE vsE-db0020-1012 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vsE-db0020-1012 Frequency Control Products CB2V

    SUM70N04-07L

    Abstract: AN609
    Text: SUM70N04-07L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF SUM70N04-07L AN609 10-Oct-07

    8843

    Abstract: 2103 datasheet AN609 Si4448DY 150342
    Text: Si4448DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4448DY AN609 10-Oct-07 8843 2103 datasheet 150342

    TSOT-23

    Abstract: TSOT23
    Text: CAT6221 300mA CMOS Dual LDO Regulator FEATURES DESCRIPTION „ Two outputs with guaranteed 300mA peak output current The 300mA CMOS Dual LDO CAT6221 combines in a single TSOT-23 6-lead package two low dropout regulators LDO , each with its own enable pin.


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    PDF CAT6221 300mA 210mV 300mA TSOT-23 CAT6221 300mA. TSOT23

    IHLP-1616BZ-11

    Abstract: No abstract text available
    Text: IHLP-1616BZ-11 Vishay Dale Low Profile, High Current Inductor FEATURES • Shielded construction • Frequency range up to 1.0 MHz RoHS • Lowest DCR/µH, in this package size COMPLIANT • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction


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    PDF IHLP-1616BZ-11 25ded 08-Apr-05 IHLP-1616BZ-11

    353830-1

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2007 APR .2007. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC ALL RIGHTS RESERVED. REVISIONS J DESCRIPTION LTR C1 ADDED - 7 ECR—0 7 —024059 DATE DWN APVD 10OCT07 TS KB 4-PLC D D <> TOP 0. i+


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    PDF 10OCT07 31MAR2000 353830-1

    Untitled

    Abstract: No abstract text available
    Text: | TH IS DRAWING IS UN PU B LISH ED. c COPYRIGHT 200 7 APR .2M7. RELEASED FOR PUBUCATlflN a l l R i6 h TS RESERvEt. REVISIONS p BY TYCO ELECTRONICS CORPORATION. LTR C1 D ESC RIPTIO N ADDED - 7 ECR—0 7 —024059 DATE DWN APVD 10OCT07 TS KB (4PLC) T O P OF P O S T


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    PDF 10OCT07