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Littelfuse Inc IXFA10N60P-TRL MOSFET N-CH 600V 10A D2-PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFA10N60P-TRL	Cut Tape	700		1	1 $4.4 10 $3.06 100 $4.4 1000 $4.4 10000 $4.4	Buy Now
	IXFA10N60P-TRL	Digi-Reel	700		1	1 $4.4 10 $3.06 100 $4.4 1000 $4.4 10000 $4.4	Buy Now
	IXFA10N60P-TRL	Reel			800	1 - 10 - 100 - 1000 $1.93563 10000 $1.93563	Buy Now
Newark	IXFA10N60P-TRL	Reel			800	1 $2.56 10 $2.56 100 $2.56 1000 $2.56 10000 $2.11	Buy Now
RS	IXFA10N60P-TRL	Bulk		8 Weeks	800	1 - 10 - 100 - 1000 $2.99 10000 $2.99	Get Quote
Littelfuse Inc IXFN110N60P3 MOSFET N-CH 600V 90A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN110N60P3	Tube	583		1	1 $38.08 10 $29.341 100 $38.08 1000 $38.08 10000 $38.08	Buy Now
Newark	IXFN110N60P3	Bulk	10		1	1 $27.25 10 $27.25 100 $27.25 1000 $27.25 10000 $27.25	Buy Now
RS	IXFN110N60P3	Bulk		8 Weeks	10	1 - 10 $44.77 100 $44.77 1000 $44.77 10000 $44.77	Get Quote
Littelfuse Inc IXFP10N60P MOSFET N-CH 600V 10A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFP10N60P	Tube	366		1	1 $4.12 10 $4.12 100 $4.12 1000 $4.12 10000 $4.12	Buy Now
Newark	IXFP10N60P	Bulk			300	1 - 10 - 100 $2.65 1000 $2.13 10000 $1.98	Buy Now
RS	IXFP10N60P	Bulk		8 Weeks	50	1 - 10 - 100 $2.88 1000 $2.88 10000 $2.88	Get Quote
Littelfuse Inc IXFB110N60P3 MOSFET N-CH 600V 110A PLUS264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFB110N60P3	Tube	118		1	1 $22.73 10 $22.73 100 $22.73 1000 $22.73 10000 $22.73	Buy Now
RS	IXFB110N60P3	Bulk		8 Weeks	25	1 - 10 - 100 $23.83 1000 $23.83 10000 $23.83	Get Quote
IXYS Corporation IXTI10N60P MOSFET N-CH 600V 10A TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTI10N60P	Tube			50	1 - 10 - 100 $1.5284 1000 $1.5284 10000 $1.5284	Buy Now

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10N60P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
10n60p Abstract: d 1065 Text: PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A ≤ 740 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V	Original	PDF	10N60P O-220 O-263 O-263) O-263 10n60p d 1065
MOSFET IXYS TO-263 Abstract: No abstract text available Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	10N60P 10N60P O-220 O-263 405B2 MOSFET IXYS TO-263
10N60P Abstract: UA740 Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A Ω RDS on ≤ 740 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS	Original	PDF	10N60P 10N60P UA740
Untitled Abstract: No abstract text available Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	10N60P 10N60P O-263 O-220 405B2
10N60PM Abstract: IXTP10N60PM Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C	Original	PDF	10N60PM O-220 405B2 10N60PM IXTP10N60PM
10n60p Abstract: No abstract text available Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	10N60P 10N60P O-263 O-220
10N60P Abstract: No abstract text available Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	10N60P O-263 O-263) O-220 O-263 10N60P
IXTP10N60PM Abstract: No abstract text available Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C	Original	PDF	10N60PM O-220 405B2 IXTP10N60PM
10N60P Abstract: g 10N60 TJM 10 Text: PolarHVTM HiPerFET Power MOSFET IXFA 10N60P IXFP 10N60P VDSS = 600 V = 10 A ID25 Ω RDS on ≤ 740 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	10N60P 10N60P g 10N60 TJM 10
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	PDF	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

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10N60P Price and Stock

Littelfuse Inc IXFA10N60P-TRL

Littelfuse Inc IXFN110N60P3

Littelfuse Inc IXFP10N60P

Littelfuse Inc IXFB110N60P3

IXYS Corporation IXTI10N60P

10N60P Datasheets Context Search

10n60p

MOSFET IXYS TO-263

10N60P

Untitled

10N60PM

10n60p

10N60P

IXTP10N60PM

10N60P

2n60p

7N60B equivalent

STW20N60