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    Hoyt Electrical Instrument Works Inc CK-910-10/0/10MADC

    DC Milliammeter, 1.5in Disp, 2-5% Accur, 1/4in Quick Tab, 10/0/10 mA Range/Scale | Hoyt Electrical Instrument Works CK-910-10/0/10MADC
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    RS CK-910-10/0/10MADC Bulk 19 1
    • 1 $30.02
    • 10 $28.52
    • 100 $24.02
    • 1000 $24.02
    • 10000 $24.02
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    Murata Manufacturing Co Ltd DCA-20PC-3-DC1-RL-C

    Digital Panel Meters 0-19.99MA INPUT
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    TTI DCA-20PC-3-DC1-RL-C Bulk 2 1
    • 1 $62.37
    • 10 $52.55
    • 100 $46.08
    • 1000 $46.08
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    Murata Manufacturing Co Ltd DCA5-20PC-2-DC1-RL-C

    Digital Panel Meters 5-40VDC NON-ISOLATED LOW POWER
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    TTI DCA5-20PC-2-DC1-RL-C Bulk 1
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    Murata Manufacturing Co Ltd DCA5-20PC-1-DC1-RL-C

    Digital Panel Meters DC AMMETER 5/50/500A EXT.SHUNT
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    TTI DCA5-20PC-1-DC1-RL-C Bulk 12
    • 1 -
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    • 100 $45.27
    • 1000 $42.66
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    Murata Manufacturing Co Ltd DCA-20PC-6-DC1-RL-C

    Digital Panel Meters DC AMMETER 20A 5-40V PWR
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    TTI DCA-20PC-6-DC1-RL-C Bulk 12
    • 1 -
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    • 100 $46.08
    • 1000 $46.08
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    10MADC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		PDF MMBT3904 OT-23 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC IEC61249 OT-23,

    MMBT3904

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC IEC61249 OT-23 OT-23, MMBT3904

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750,

    "marking s1a" sot-23

    Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750, "marking s1a" sot-23 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a

    K1010

    Abstract: FB0803 e 420 DCK-1010
    Text: FB0803 扩散硅型压力变送器 一技术指标 使用对象 液体、气体或蒸汽 表压：0～5KPa～3.5MPa , 密封表压：0～7MPa～120MPa 测量范围 绝压： 0～20KPa～120Mpa ， 负压：-100KPa～700KPa 输出 4～20mADC，可提供 0-10mADC,0-5VDC,1-5VDC 等形式


    Original     		PDF FB0803 05KPa3 07MPa120MPa 020KPa120Mpa -100KPa700KPa 420mADC 0-10mADC 1530VDC( 420mADC 20-200Hz K1010 FB0803 e 420 DCK-1010

    Untitled

    Abstract: No abstract text available
    Text: AM7203 Diodes Matched Configuration Diode Semiconductor MaterialSilicon Package StyleBR-2w Mounting StyleT DescriptionPair;PIV 100V;trr 50ns;If 50mA;C 4.0pf;If match 5.0mA-10mAdc.


    Original     		PDF AM7203 0mA-10mAdc.

    Untitled

    Abstract: No abstract text available
    Text: AM7208 Diodes Matched Configuration Diode Semiconductor MaterialSilicon Package StyleBR-2w Mounting StyleT DescriptionQuad;PIV 100V;trr 50ns;If 50mA;C 4.0pf;If match 5.0mA-10mAdc.


    Original     		PDF AM7208 0mA-10mAdc.

    2N2907 application notes

    Abstract: 2N2907 a TRANSISTOR
    Text: MCC 2N2907 2N2907A   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates


    Original     		PDF 2N2907 2N2907A 600mA) 2N2907A 2N2907 application notes 2N2907 a TRANSISTOR

    2N4403 noise figure

    Abstract: No abstract text available
    Text: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range


    Original     		PDF 2N4403 -55OC 150OC MIL-STD-202E 583-2N4403 2N4403 noise figure

    2N2484UA

    Abstract: 2N2484 2N2484UB 50VDC 2N2484UBC
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA 2N2484UB 2N2484UBC * JAN


    Original     		PDF MIL-PRF-19500/376 2N2484UA 2N2484UB 2N2484UBC 500Adc, 30MHz 100kHz T4-LDS-0058 2N2484UA 2N2484 2N2484UB 50VDC 2N2484UBC

    2N2907A

    Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB


    Original     		PDF MIL-PRF-19500/291 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907A 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB

    pressure vessel

    Abstract: NEGATIVE Pressure TranSMITTER 4 WIRE Pressure transmitter 4 WIRE LD500 M12X1 M20X1 DIAPHRAGM PUMP pressure oil gauge sensor wheatstone bridge in pressure sensor anti-lighting
    Text: LD500 pressure transmitter Description LD500 pressure transmitter adopts the high accurate and stable isolation sensors from USA, which combine solid-state integration technique with isolation diaphragm technique. The product preserves high sensitivity, linearity and stability even


    Original     		PDF LD500 420mADC 15VDC range01reakdown. LD500 M20X1 M12X1 pressure vessel NEGATIVE Pressure TranSMITTER 4 WIRE Pressure transmitter 4 WIRE M12X1 DIAPHRAGM PUMP pressure oil gauge sensor wheatstone bridge in pressure sensor anti-lighting

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Schottky Barrier Diode BAT54X List List. 1 Package outline. 2 Features. 2


    Original     		PDF BAT54X MIL-STD-750D METHOD-1051 1000hrs. METHOD-1038 METHOD-1031 METHOD-1056

    Untitled

    Abstract: No abstract text available
    Text: SPD48 thru SPD51 Solid State Devices, Inc. Series 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 200 mAMP 50-125 Volts 5 nsec Part Number / Ordering Information 1/


    Original     		PDF SPD48 SPD51 10mADC 100mADC RH0085G

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N4401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


    Original     		PDF 2N4401 600mWatts -55oC 150oC

    MSD7000

    Abstract: MSD700 LMBT6520LT1G
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor We declare that the material of product compliance with RoHS requirements. LMBT6520LT1G Ordering Information Device Marking Shipping LMBT6520LT1G 2Z 3000/Tape&Reel LMBT6520LT3G 2Z 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS


    Original     		PDF LMBT6520LT1G 3000/Tape LMBT6520LT3G 10000/Tape OT-23 MSD7000 MSD700 LMBT6520LT1G

    SC-89

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE LMBT3904TT1G ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION 3 Device Marking Shipping LMBT3904TT1G MA


    Original     		PDF LMBT3904TT1G 3000/Tape LMBT3904TT3G 10000/Tape SC-89 463C-01 463C-02. SC-89

    MMBL914H

    Abstract: No abstract text available
    Text: MMBL914H SOD-323 1 WEITRON http://www.weitron.com.tw MMBL914H Maximum Ratings Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM Surge 500 mAdc Symbol Max Unit Total Device Dissipation FR-5 Board TA=25 C Derate Above 25 C


    Original     		PDF MMBL914H OD-323 MMBL914H

    125OC

    Abstract: MMBT2907LT1
    Text: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range


    Original     		PDF MMBT2907LT1 OT-23 -55OCto 150OC OT-23 MIL-STD-202E CHARA10 125OC MMBT2907LT1

    MMBT6427

    Abstract: No abstract text available
    Text: MMBT6427 NPN Transistors Darlington Amplifier COLLECTOR 3 * We declare that the material of product compliance with RoHS requirements. BASE 1 P b Lead Pb -Free EMITTER 2 MAXIMUM RATINGS Rating Symbol V alue Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage


    Original     		PDF MMBT6427 OT-23 21-Dec-07 OT-23 MMBT6427

    MMBT2222AGH

    Abstract: 1N914
    Text: Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 MMBT2222AGH BASE 1 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO


    Original     		PDF MMBT2222AGH OT-23 MMBT2222AGH 1N914

    MARKING IY SOT

    Abstract: No abstract text available
    Text: WTA8921 PNP Silicon Transistors COLLECTOR * “G” Lead Pb -Free 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value


    Original     		PDF WTA8921 OT-23 WTA8921 -20mAdc) -10Vdc, -10mAdc, 30MHz) OT-23 MARKING IY SOT

    MD986

    Abstract: MD986F MD966 508 die 610-A03
    Text: MD9 8 6 silicon MD9 8 6 F NPN/PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as switches, dual general-purpose amplifiers, front end detectors and in temperature compensation applications. • Low Collector-Emitter Saturation Voltage -V cE(sat) ~ 0.3 Vdc (Max) @ I q = 10mAdc


    OCR Scan     		PDF MD986 MD986F 10MAdc, MD986F 300ms. MD986 MD966 508 die 610-A03

    MMBTH10

    Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
    Text: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter


    OCR Scan     		PDF MPSW92 bS01130 0Q37273 r-31-n MMBTA92 TL/G/10100-1 O-226AE O-236 OT-23) TL/G/10100-5 MMBTH10 t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national