62256P
Abstract: 62256F 62256L 622568 M62256FP I77777 62256-10 62256-15
Text: HM62256 Series 32768-word x 8-bit High Speed CMOS Static RAM • FEATURES • • H M 622S6P Series High Speed: Fast Access Time 85/100/120/150ns max. Low Power Standby and Low Power Operation; Standby: 200fjW (typ)/10jiW <typ) (L-version), • • Operation: 40mW (typ.)
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HM62256
32768-word
85/100/120/150ns
200fjW
/10jiW
622S6P
62256P
62256F
62256L
622568
M62256FP
I77777
62256-10
62256-15
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Untitled
Abstract: No abstract text available
Text: • { H Y U N D A HY62V256 Series I 32K X 8-bit CMOS SRAM DESCRIPTION The HV62V256 is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that guarantees
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HY62V256
HV62V256
55/70/85/100ns
100/120/150ns
1DC03-11-MAY95
HY62V256LP
HY62V256LJ
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Untitled
Abstract: No abstract text available
Text: 0 OPTEK Product Bulletin OPC922 June 1993 Dual Element Silicon PN Photodiode Type OPC922 Features Absolute Maximum Ratings*1* (Ta = 25°C unless otherwise noted • 25 mil x 50 mil PN photodiode elements • Silicon nitride passivation • Anti-reflective coating
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OPC922
OPC922
150mW
100hA
10jiW,
935nm,
OPC922TP
OPC922WP
OPC922SP
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EL15 diode
Abstract: 47903 LSC2110 LSC3300 LSC2300 monitor photodiode
Text: “ , U TECHNOLOGIES 4SE D • iH S D H Qppoo^ t HBTDT B r tM i T$'ocom & DuPont T E C H N O L O G I E S LSC1300 MINIATURE LASER MODULE Features Applications I Miniature 6 pin hermetic package includes laser, monitor photodiode, single mode fiber pigtail, and
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LSC1300
LSC3300
EL15 diode
47903
LSC2110
LSC3300
LSC2300
monitor photodiode
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33A1S
Abstract: HY628400LG-I
Text: HY628400-I Series •HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628400-I
512KX
1DE02-11-MAY95
HY628400LP-I
HY628400LLP-I
HY628400LG-I
33A1S
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D739A
Abstract: PD739A13
Text: MITSUBIS]HI ELECTR] C CORPORATION * DATE: SPECIFICATION -SHEET July 20,’00 PREPARED BY: S.Funaba CHECKED BY: S.Minamihara Y.Tanaka APPROVED BY: A.Takemoto 1. TYPE : PD739A13 2. APPLICATOIN : OPTICAL COMMUNICATION 3. STRUCTURE : <>20 \im InGaAs PIN PHOTODIODE with PRE-AMPLIFIER
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PD739A13
G480698
739A13
54GHz
D739A
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Untitled
Abstract: No abstract text available
Text: □PM DPV27C101 Dense-Pac Microsystems, Inc. O 128KX8 UVPROM MONOLITHIC DESCRIPTION: The DPV27C101 is a high-speed 128K X 8 UV erasable, electrically programmable read only memory EPROM . It is especially well suited for applications where low-power consumption is important
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DPV27C101
128KX8
DPV27C101
32-pin
32-pad
27C\0\.
125-C
200ns
250ns
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TO1C
Abstract: ASC ROIC HYUNDAI HY62256B-I Series Y622
Text: HY62256B-I Series HYUNDAI 3 2 K x 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY62256B-I
HY62256B-I
4b75QÃ
1DC05-11-MAY95
HY62256BLP-I
HY62256BLLP-I
HY62256BU-I
TO1C
ASC ROIC
HYUNDAI HY62256B-I Series
Y622
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Untitled
Abstract: No abstract text available
Text: g g jg X dt) 3.3V CMOS 16-BIT BIDIRECTIONAL TRANSCEIVERS IDT54/74FCT163245/A/C Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology The IDT54/74FCT163245/A/C 16-bit transceivers are built using advanced dual metal CMOS technology. These high
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16-BIT
IDT54/74FCT163245/A/C
IDT54/74FCT163245/A/C
16-bit
MIL-STD-883,
S048-1)
S048-2)
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74HC04U
Abstract: No abstract text available
Text: — A 1» X I A 1 +5V, Low -Pow er, 12-Bit S eria l A D C s _ Features ♦ 12-Bit Resolution _ Applications Portable Data Logging Remote Digital Signal Processing Isolated Data Acquisition ♦ ±54 L S B Integrai Nonlinearity MAXI87A/MAX189A
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MAX187/MAX189
12-bit
75ksps
MAX187
MAX189
MAX189
74HC04U
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Untitled
Abstract: No abstract text available
Text: HM6117LP-3, HM6117LP-4 — Preliminary— 2048-word x 8-bit High Speed Static CMOS RAM •FEATURES • • • • • • • • Single 5V Supply and High Density 24 Pin Package. High Speed: Fast Access Time 150ns/200ns max. Low Power Standby and Low Power Operation;
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HM6117LP-3,
HM6117LP-4
2048-word
150ns/200ns
10jiW
180mW
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MSM8128SXLMB10
Abstract: msm8128sxlmb
Text: MSM8128S/K/VAV/JX-85/10/12 Issue 1.0 : August 1989 MSM8128S/K/V/W/JX ,28K*8MonoU,hlcCM0SSRAW I ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS High Speed Static RAM Features Pin Definition Package Type:'S',’K','V' Fast Access Times of 85,100,120 nS ASIC JEDEC 1Megabit Module Pinout
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MSM8128S/K/VAV/JX-85/10/12
MSM8128S/K/V/W/JX
10jiW
MIL-STD-883B
MSM8128SXLMB-10
MIL-STD-883B
MSM8128S/K/V/W/JX-85/10/12
MSM8128SXLMB10
msm8128sxlmb
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Untitled
Abstract: No abstract text available
Text: MSM8128S/K/V/W/J-85/10/12 Issue 1.0 : August 1989 MSM8128S/K/V/W/J l28Kx8Monoli,hicCM0SSRAM ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS High Speed Static RAM Features Pin Definition Package Type: 'S’,'K',’V' Fast Access Times of 85,100,120 nS JEDEC Standard 32 pin DIL Footprint
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MSM8128S/K/V/W/J-85/10/12
MSM8128S/K/V/W/J
10jiW
MIL-STD-883B
MSM8128S
MB-10
MIL-STD-883B
128S/K/V
/W/J-85/10/12
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Untitled
Abstract: No abstract text available
Text: PPJEK Product Bulletin OPC911 June 1993 PN Photodiodes Type OPC9XXX D I M E N S I O N S A R E IN I N C H E S K I L L I H E T E R S Features Absolute Maximum Ratings*1* (T a = 25°C unless otherwise noted) • • Operating Tem perature.
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OPC911
935nm,
OPC910
OPC915
OPC925
OPC9013
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Untitled
Abstract: No abstract text available
Text: OPTEK Product Bulletin OMF432TX/TXV April 1993 High Reliability Fiber Optic High Speed PIN Photodiode Type OMF432TX, OMF432TXV in ST* Compatible Receptacle Features • Component pre-mounted and ready for use • Pre-tested with fiber to assure performance
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OMF432TX/TXV
OMF432TX,
OMF432TXV
MIL-S-19500
100VDC
200mW
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