GL9L156
Abstract: GL9P156 GL9L15 GL8L156 GL9H156 8D156 GL9E156 AL156 c26f GL8D
Text: 14 I I d A mm mm GL90 156/GL8D 156 Series Numeric LEDs GL9U156 / GL8C!156 • Absolute Maximum Ratings Parameter Power dissipation Continuous forward current X lper digit X I per digit IF 140 105 140 140 105 mA %2 IF 20 15 20 20 15 mA X2 lF\i 100 50 50 50
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156/GL8D
GL9U156
GL9L1561GL9P156
GL9D1561GL9s1561
GL9E1561
GL8L1561GL8P156
IGL8D156
IGL8E156
GL9T1561
GL9H1561GL9K156
GL9L156
GL9P156
GL9L15
GL8L156
GL9H156
8D156
GL9E156
AL156
c26f
GL8D
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KTN2222AS
Abstract: KTN2222S KTN2222AS SOT-23
Text: SEMICONDUCTOR TECHNICAL DATA KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.
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KTN2222S/AS
15QmA,
KTN2907S/2907AS.
KTN2222S
KTN2222AS
10x8x0
KTN2222AS
KTN2222AS SOT-23
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1799D
Abstract: 30aA 2SC3576
Text: O rde rin g n u m b e r: EN 1799D _ 2SC3576 N0.1799D NPN Epitaxial Planar Silicon Transistor SANYO i High hpE, Low-Frequency General-Purpose Amp Applications Applications . LF general-purpose amplifiers, various drivers, muting circuit Features
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1799D
2SC3576
1799D
30aA
2SC3576
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KTN2369AU
Abstract: KTN2369U
Text: SEMICONDUCTOR TECHNICAL DATA KTN2369U/AU EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics. -Œ MAXIMUM RATINGS (Ta=25°C)
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KTN2369U/AU
500MHz
100MHz,
KTN2369AU
KTN2369U
100mA,
100MHz
KTN2369AU
KTN2369U
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KTN2369
Abstract: KTN2369A
Text: SEMICONDUCTOR TECHNICAL DATA KTN2369/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics. • KTN2369/2369A Electrically Similar to 2N2369/2369A.
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KTN2369/A
500MHz
100MHz,
KTN2369/2369A
2N2369/2369A.
KTN2369
KTN2369A
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HEMT marking P
Abstract: No abstract text available
Text: SA NY O S E M I C O N D U C T O R CORP T W O T b SEE D OOObTOO 3 T-3Ì - IS 2SK1240-1243 HEMT Series 2072 2073 N-Channel AIGaAs/GaAs Hetero Junction FET X-Band Very Low-l\loise Amp Applications 3186 Features • Very low noise & ' High associated gain
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2SK1240-1243
2SK1241
2SK1243
HEMT marking P
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTN2369U/AU EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics. MAXIMUM RATINGS (Ta=25°C)
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KTN2369U/AU
500MHz
100MHz,
KTN2369U
KTN2369AU
100MHz
100mA,
10iiiA,
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KIA431A equivalent
Abstract: kla431 KIA431A KIA431B SOT-89 marking 3b kia431 KIA431AF KIA431F equivalent kia431a KIA431BF
Text: KIA43 l/F /A/AF/B/BF SEMICONDUCTOR BIPOLAR LINEAR INTEGRATED CIRCUIT TECHNICAL DATA PROGRAMMABLE PRECISION REFERENCES T he KIA431/F/A/AF/B/BF integrated circuits are threeterminal programmable shunt regulator diodes. These monolithic IC voltage reference operate as a low temperature coefficient zener
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KIA431/F/A/AF/B/BF
KlA431/F/A/AF/B/BF
100mA
OT-89
KIA431A equivalent
kla431
KIA431A
KIA431B
SOT-89 marking 3b
kia431
KIA431AF
KIA431F
equivalent kia431a
KIA431BF
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KTD525
Abstract: KTB595
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL D A T A KTD525 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage :VcE sat =2.0V(Max.). • Complementary to KTB595. MILLIMETERS MAXIMUM RATINGS (Ta=25°C)
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KTD525
KTB595.
220AB
KTD525
KTB595
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TNY 176 PN EQUIVALENT
Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
Text: 1977 DATA CATALOG f m ELECTRONICS G E N E R A L I N S T R U M E N T C O R P O R A T I O N » M IC R O E L E C T R O N I C S r I' i i INDEX/GENERAL INFORMATION. CALCULATORS. CLOCKS.
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LM150A
Abstract: OM7637SM OMA7637SM
Text: OM7637SM SURFACE MOUNT POSITIVE ADJUSTABLE 3.0 AMP VOLTAGE REGULATOR Isolated Hermetic Surface Mount Package 3.0 Amp, Positive Adjustable Voltage Regulator FEATURES • • • • • • Isolated Hermetic Surface Mount Package Reference Voltage Set To ± 2 % ±1% Available
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OM7637SM
LM150A
1CI37
LM150A
OM7637SM
OMA7637SM
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A7102
Abstract: AD8659 FLP-16
Text: SEMICONDUCTOR TECHNICAL DATA KIA7102AP/AF BIPOLAR LINEAR INTEGRATED CIRCUIT Under Development DUAL OPERATIONAL AMPLIFIER-DUAL COMPARATOR ADJUSTABLE VOLTAGE REFERENCE The KIA7102AP/AF is a monolithic IC that includes two OP-Amps, two Comparators and a precision voltage
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KIA7102AP/AF
FLP-16
10hiA
10ijA
ul11c1
jcl111cu
A7102
AD8659
FLP-16
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a431 ic
Abstract: A431 Programmable Voltage Reference KIA431A equivalent A431 KIA431A A431 sot89 a431 equivalent kla431 KIA431F KIA431B
Text: KIA43 l/F /A/AF/B/BF SEMICONDUCTOR BIPOLAR LINEAR INTEGRATED CIRCUIT TECHNICAL DATA PROGRAMMABLE PRECISION REFERENCES T he KIA431/F/A/AF/B/BF integrated circuits are threeterminal programmable shunt regulator diodes. These monolithic IC voltage reference operate as a low temperature coefficient zener
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KIA431/F/A/AF/B/BF
KlA431/F/A/AF/B/BF
100mA
OT-89
a431 ic
A431 Programmable Voltage Reference
KIA431A equivalent
A431
KIA431A
A431 sot89
a431 equivalent
kla431
KIA431F
KIA431B
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KTH2369
Abstract: KTH2369A pta40
Text: SEMICONDUCTOR TECHNICAL DATA KTH2369/A e p it a x ia l p la n a r npn t r a n s i s t o r HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (Vce=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics.
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KTH2369/A
500MHz
100MHz,
KTH2369
KTH2369A
pta40
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1SS317
Abstract: No abstract text available
Text: II ^ iil § • 1S S 2 6 5 till Ax O-A T O : VHF/UHF f c i t / W f l H » ? ? TV ¥f& :IB i i iS W 'S l 'o M3. • 1S S 2 6 8 M iÊ :V H F # S : a * î / J 'ÿ V 'o S : I B B W A ’M i . ' o Vr V !æ! a fê S tS ffi 35 9. i f f i É : VHF + i #  : g  * î/ h è l,'o
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10hiA
100MHz
1SS317
100mA
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KTA1038
Abstract: KTC2018
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL D A T A KTC2018 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : V c e o = 1 0 0 V . • Low Collector Saturation Voltage :VcE sat =2.0V(Max.). • Complementary to KTA1038.
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KTC2018
KTA1038.
220AB
KTA1038
KTC2018
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marking EE
Abstract: KN2222AS KN2222S SOT-23 type name HJ 13002
Text: SEMICONDUCTOR TECHNICAL DATA KN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM A B : Ic E x -1 0 n A M a x . ; V ce - 6 0 V , V e b (off )-3 V . • Low Saturation Voltage
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KN2222S/AS
150mA,
KN2907S/2907AS.
KN2222S
KN2222AS
10x8x0
marking EE
KN2222AS
SOT-23 type name
HJ 13002
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