10HZTO15 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CXT5551 SOT-89 Transistor NPN 1. BASE 1 2. COLLECTOR SOT-89 3. EMITTER Features 4.6 4.4 1.8 1.4 1.6 1.4 B Switching and amplification in high voltage 2.6 4.25 2.4 3.75 Applications such as telephony 0.8 MIN Low current(max. 600mA) 0.44 0.37 High voltage(max.180v)	Original	PDF	CXT5551 OT-89 OT-89 600mA) 100MHz 10Hzto15
RS10100 Abstract: CZT5401 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT5401 SOT-223 TRANSISTOR PNP FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current ICM: -0.6 A Collector-base voltage	Original	PDF	OT-223 CZT5401 OT-223 -100V -10mA -50mA -10mA -50mA RS10100 CZT5401
CZT5401 Abstract: No abstract text available Text: CZT5401 CZT5401 SOT-223 TRANSISTOR PNP FEATURES Power dissipation 1. BASE PCM: 1 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current A ICM: -0.6 Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃	Original	PDF	CZT5401 OT-223 -100V -10mA -50mA -10mA -50mA CZT5401
CZT5551 Abstract: No abstract text available Text: CZT5551 CZT5551 SOT-223 TRANSISTOR NPN FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current A ICM: 0.6 Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃	Original	PDF	CZT5551 OT-223 -10mA 100MHz 10Hzto15 CZT5551
switching and amplification Abstract: CXT5551 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors CXT5551 SOT-89 TRANSISTOR NPN FEATURES Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180v)	Original	PDF	OT-89 CXT5551 OT-89 600mA) 100MHz 10Hzto15 switching and amplification CXT5551
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors CXT5551 SOT-89-3L TRANSISTOR NPN FEATURES Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180V)	Original	PDF	OT-89-3L CXT5551 OT-89-3L 600mA) 100MHz 10Hzto15
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT5551 SOT-223 TRANSISTOR NPN FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current ICM: 0.6 A Collector-base voltage	Original	PDF	OT-223 CZT5551 OT-223 -10mA 100MHz 10Hzto15
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors CXT5551 SOT-89 TRANSISTOR NPN FEATURES 1 Switching and amplification in high voltage z 1. BASE Applications such as telephony z Low current(max. 600mA) z High voltage(max.180v)	Original	PDF	OT-89 CXT5551 OT-89 600mA) 100MHz 10Hzto15
BSS67 Abstract: No abstract text available Text: BSS66 SOT23 NPN SILICON PLANAR M E D IU M POW ER SW ITCHING T R A N SIST O R S ISSUE 2 - SEPTEMBER 1995 Q PARTMARKING DETAILS — BSS66 BSS67 - RQQ«7 M6 M7 BSS66R- M8 BSS67R- M9 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE	OCR Scan	PDF	BSS66 BSS67 BSS66 BSS66R- BSS67R- Emitter100m BSS67 100kHz
Untitled Abstract: No abstract text available Text: BSS69 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS R Q Q 7 ÌÌ ISSU E 2 - SEPTEM BER 1995 Q PARTMARKING DETAILS — BSS69 BSS70 BSS69RBSS70R- L2 L3 L6 L7 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V V CBO	OCR Scan	PDF	BSS69 BSS70 BSS69RBSS70RL2 BSS69 -50mA* -100mA* BSS70 100MHz 100kHz