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    10A 100V BIPOLAR TRANSISTOR Search Results

    10A 100V BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    10A 100V BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JANS2N2484

    Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
    Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930


    Original     		JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2484 JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373 PDF

    200w AUDIO AMPLIFIER

    Abstract: transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a
    Text: BDX68A BDX68A BDX68B BDX68C SEME LAB PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		BDX68A BDX68B BDX68C BDX69, BDX69A, BDX69B, BDX69C. 25ime 300ms, 200w AUDIO AMPLIFIER transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a PDF

    200W TRANSISTOR AUDIO AMPLIFIER

    Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
    Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, BDX69" 200W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier PDF

    IRGPH20S

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1138 IRGPH20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve


    Original     		IRGPH20S 400Hz) O-247AC IRGPH20S PDF

    IRGPH20S

    Abstract: C41-C41
    Text: PD - 9.1138 IRGPH20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 1200V VCE(sat) ≤ 3.3V


    Original     		IRGPH20S 400Hz) O-247AC IRGPH20S C41-C41 PDF

    IRGPH20S

    Abstract: No abstract text available
    Text: PD - 9.1138 IRGPH20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 1200V VCE(sat) ≤ 3.3V


    Original     		IRGPH20S 400Hz) O-247AC IRGPH20S PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		BDS12N1A, BDS12N1B O-276AA) BDS12N1B-JQRS PDF

    BDS12M2A

    Abstract: EG marking Q217
    Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		BDS12M2A O-257AB BDS12M2A-JQRS BDS12M2A EG marking Q217 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		BDS12N1A, BDS12N1B O-276AA) BDS12N1B-JQRS PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		BDS12M2A O-257AB BDS12M2A-JQRS PDF

    IGBT DRIVER ignition coil automotive

    Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
    Text: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of


    Original     		HUF75639P3, HUF75639S3S HUF75637P3, HUF75637S3S HUF75631P3 HUF75623P3 FN4477 FN4721 FN4720 FN4804 IGBT DRIVER ignition coil automotive mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA16N170AHV IXBT16N170AHV VCES = 1700V IC25 = 16A VCE sat  6.0V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700


    Original     		IXBA16N170AHV IXBT16N170AHV O-263HV 338B2 PDF

    mosfet 10a 600v

    Abstract: IRGBC20S IGBT D-12 IRGBC20S
    Text: PD - 9.687A IRGBC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.4V


    Original     		IRGBC20S O-220AB mosfet 10a 600v IRGBC20S IGBT D-12 IRGBC20S PDF

    zvn4306

    Abstract: ZTX Zetex ZTX108 ZTX504 analog switch circuit using mosfet analog switch circuit using mosfet to control zetex transistors TO92 ZETEX DN2 ZTX855 ZTX955
    Text: Design Note 2 Issue 2 June 1995 Sonar Transducer Driver using TO92 Style Bipolar Transistors Design Note 3 Issue 2 June 1995 High Current High Voltage Analog Switches + 100V R7 C4 Input ZVN4306 ZVN4306 Output R6 ZTX 855 C2 R8 VR1 ZTX 108 Output R9 R1 R4 Control


    Original     		ZVN4306 2N7000 200mA. ZVN4106F zvn4306 ZTX Zetex ZTX108 ZTX504 analog switch circuit using mosfet analog switch circuit using mosfet to control zetex transistors TO92 ZETEX DN2 ZTX855 ZTX955 PDF

    100MHZ

    Abstract: FMMT491
    Text: RECTRON FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range


    Original     		FMMT491 OT-23 OT-23 MIL-STD-202E 100MHZ FMMT491 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT591 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : -1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range


    Original     		FMMT591 OT-23 -55OC 150OC OT-23 MIL-STD-202E 012different PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range


    Original     		FMMT491 OT-23 OT-23 MIL-STD-202E PDF

    100MHZ

    Abstract: FMMT591
    Text: RECTRON FMMT591 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : -1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range


    Original     		FMMT591 OT-23 -55OC 150OC OT-23 MIL-STD-202E 100MHZ FMMT591 PDF

    BR 9014 transistor

    Abstract: AN-946B FD9014 BR 9014 C TRANSISTOR Pelly high power class d
    Text: AP P LIC A TIO N NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X F E T is t h e t r a d e m a r k t o r I n t e r n a t i o n a l R e c t i f i e r P o w e r M O S F E T s By S. C L E M E N T E , B. PELLY, R. R U T T O N S H A , B. TAYLO R


    OCR Scan     		25kHz AN-946B BR 9014 transistor AN-946B FD9014 BR 9014 C TRANSISTOR Pelly high power class d PDF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 PDF

    TL494 full bridge inverter

    Abstract: dc motor speed control tl494 switching power supply TL494 WELDING TL494 full bridge IR2N6547 Speed control of dc motor using TL494 Ruttonsha make Power diode ratings ir in4007 full bridge TL494 946b
    Text: APPLICATION NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X FE T is the tra dem ark fo r In te rn a tio n a l R e c tifie r P ow er M O S FETs By S. CLEM EN TE, a . PELLY, R. R U T T O N S H A , B. TAYLOR


    OCR Scan     		25kHz AN-946B TL494 full bridge inverter dc motor speed control tl494 switching power supply TL494 WELDING TL494 full bridge IR2N6547 Speed control of dc motor using TL494 Ruttonsha make Power diode ratings ir in4007 full bridge TL494 946b PDF

    IRGBC20S

    Abstract: IRGBC20S IGBT
    Text: International BggRectifier IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.687A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		IRGBC20S TQ-220AB IRGBC20S IRGBC20S IGBT PDF

    Q405

    Abstract: vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e
    Text: INTERNATIONAL RECTIFIER EbE D 4055455 00105=11 7 • Data Sheet No. PD-9.669 T-3Ì-03 International Usi Rectifier INSULATED GATE BIPOLAR TRANSISTOR IRGBCS6 600V, 19A FEATURES 600V, 19A, TO-220AB IGBT International Rectifier’s IR G series o f Insulated Gate


    OCR Scan     		Q01QS11 O-220AB Q405 vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e PDF

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N PDF