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    10A 1000V TO220A Search Results

    10A 1000V TO220A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS60-010S Coilcraft Inc Current Sense Transformer, 10A Visit Coilcraft Inc Buy
    CS60-010L Coilcraft Inc Current Sense Transformer, 10A, ROHS COMPLIANT Visit Coilcraft Inc
    CS1050 Coilcraft Inc Current Sense Transformer, 10A, 1:50 Visit Coilcraft Inc Buy
    D1869 Coilcraft Inc Current Sense Transformer, 10A, 1:50, Visit Coilcraft Inc Buy
    CS4050V-01L Coilcraft Inc Current Sense Transformer, 10A, ROHS COMPLIANT Visit Coilcraft Inc

    10A 1000V TO220A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    scr 600V 10A

    Abstract: 10A SCR device scr 200a 1000v SCR 30A 400V JESD22-A101 JESD22-A102 scr 600v 12a TO-220 scr 20a E71639 teccor scr
    Text: Teccor brand Thyristors 10 Amp Sensitive & Standard SCRs Sxx10xSx & Sxx10x Series Description Excellent unidirectional switches for phase control and general switching applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps


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    PDF Sxx10xSx Sxx10x EIA-481-2 O-220AB O-251AA O-252AA Sxx10L O-220 scr 600V 10A 10A SCR device scr 200a 1000v SCR 30A 400V JESD22-A101 JESD22-A102 scr 600v 12a TO-220 scr 20a E71639 teccor scr

    scr 600v 12a TO-220

    Abstract: SCR 30A 400V SCR 30A 600V SCR 400V Igt 15mA JESD22-A101 JESD22-A102 Sxx10xyy s3500a SCR 20A 600V SCR TO251
    Text: Teccor brand Thyristors 10 Amp Sensitive & Standard SCRs Sxx10xSx & Sxx10x Series Description Excellent unidirectional switches for phase control and general switching applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps


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    PDF Sxx10xSx Sxx10x EIA-481-2 O-220AB O-251AA O-252AA Sxx10L O-220 scr 600v 12a TO-220 SCR 30A 400V SCR 30A 600V SCR 400V Igt 15mA JESD22-A101 JESD22-A102 Sxx10xyy s3500a SCR 20A 600V SCR TO251

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


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    PDF 5639A IRG4BC20SPbF O-220AB O-220AB I4BC20SPbF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


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    PDF 5639A IRG4BC20SPbF O-220AB O-220AB

    JESD22-A101

    Abstract: JESD22-A102 strobe SCR
    Text: Teccor brand Thyristors 10 Amp Sensitive & Standard SCRs Sxx10xSx & Sxx10x Series ® Description Excellent unidirectional switches for phase control and general switching applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps


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    PDF Sxx10xSx Sxx10x O-220AB O-251AA O-252AA Sxx10L Sxx10DS3 O-220 O-251 JESD22-A101 JESD22-A102 strobe SCR

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


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    PDF IRG4BC20SPbF O-220AB O-220AB O-220AB.

    SCR 30A 600V

    Abstract: DPAC JESD22-A101 JESD22-A102 teccor scr SCR 30A 400V Sxx10DSy
    Text: Teccor brand Thyristors 10 Amp Sensitive & Standard SCRs Sxx10xSx & Sxx10x Series Description Excellent unidirectional switches for phase control and general switching applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps


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    PDF Sxx10xSx Sxx10x O-220AB O-251AA O-252AA Sxx10L Sxx10DS3 O-220 SCR 30A 600V DPAC JESD22-A101 JESD22-A102 teccor scr SCR 30A 400V Sxx10DSy

    G03N1202

    Abstract: No abstract text available
    Text: IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    PDF IGP03N120H2 IGW03N120H2 PG-TO-247-3-1 O-247AC) PG-TO-220-3-1 O-220AB) G03N1202 PG-TO-247-3-1

    g03h1202

    Abstract: No abstract text available
    Text: IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    PDF IGP03N120H2 IGW03N120H2 PG-TO-247-3-21 PG-TO-220-3-1 15mances. g03h1202

    g03h1202

    Abstract: No abstract text available
    Text: IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    PDF IGP03N120H2 IGW03N120H2 PG-TO-220-3-1 PG-TO-247-3-21 G03H1202 PG-TO-247-3-21

    G03H1202

    Abstract: 1000v 1A smps
    Text: IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    PDF IGP03N120H2 IGW03N120H2 PG-TO-247-3-1 PG-TO-220-3-1 G03H1202 PG-TO-247-3-1 1000v 1A smps

    smps* ZVT

    Abstract: 1200v 3A 15v 60w smps Electronic ballast 40W IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 P-TO-247-3-1
    Text: IGP03N120H2, IGW03N120H2 IGB03N120H2 HighSpeed 2-Technology • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies C G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    PDF IGP03N120H2, IGW03N120H2 IGB03N120H2 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-247-3-1 O-247AC) smps* ZVT 1200v 3A 15v 60w smps Electronic ballast 40W IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 P-TO-247-3-1

    15v 60w smps

    Abstract: IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 smps* ZVT P-TO-247-3-1
    Text: IGP03N120H2, IGW03N120H2 IGB03N120H2 HighSpeed 2-Technology • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior


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    PDF IGP03N120H2, IGW03N120H2 IGB03N120H2 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-247-3-1 O-247AC) 15v 60w smps IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 smps* ZVT P-TO-247-3-1

    RG-2A Diode

    Abstract: PG-TO-247-3 K03N1202 3V10A
    Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    PDF IKP03N120H2 IKW03N120H2 K03N1202 PG-TO-247-3-1 O-247AC) PG-TO-220-3-1 O-220AB) RG-2A Diode PG-TO-247-3 3V10A

    K03H1202

    Abstract: 05852 k03h120 k03h12 15v 60w smps DIODE 3A 1000V IKW03N120H2 IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3-21
    Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    PDF IKP03N120H2 IKW03N120H2 PG-TO-247-3-21 PG-TO-220-3-1 K03H1202 05852 k03h120 k03h12 15v 60w smps DIODE 3A 1000V IKW03N120H2 IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3-21

    buw13a philips semiconductor

    Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
    Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A


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    PDF S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor mje13008 BUS12 BUS12A BUT12A BUS13 BUT18AF

    buw13a philips semiconductor

    Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V
    Text: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V


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    PDF bki53T31 BUT18 BUT18A O-220AB 180ns BUT18F BUT18AF OT-186 BUT12 buw13a philips semiconductor BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A


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    PDF 180ns OT-93 400ns BUV298AV BUV298V OT-227B1 -220AB BUT18F

    BU2506DF

    Abstract: 1500v 02xs t199 5A 800V BU508
    Text: 42 Power Devices High Speed, High Voltage Transistors in order of current rating (cont.) Package Outline V CE (sat) tf typ at lc lC(DC)<1> V CES V CEO max. at Iq/I b (Inductive Load) BUT12 BUT12A TO-220AB 8A 850V 1000V 400V 450V 1.5V at 6A/1.2A 1.5V at 5A/1 A


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    PDF BUT12 BUT12A O-220AB OT-93 OT-199 OT-186A OT-227B1 OT-227B1 200ns BU2506DF 1500v 02xs t199 5A 800V BU508

    diode 1000V 10a

    Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
    Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A


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    PDF O-220AB O-220AB 750ns BU407 BUV28 BUV28A BUV27 BUV27A diode 1000V 10a 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV

    BT145-500R

    Abstract: PHILIPS BT152-400R BTW38-600R 400v 50A Transistor BT148-400R SOT-186 600RU BTW38-600RU 600v BTW38
    Text: N AMER PHILIPS/DISCRETE 30 BSE D • b b S B ' m GOlbSQÖ 5 ■ T -Z S '-O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating PACKAGE OUTLINE AVERAGE ON-STATE CURRENT fT(RMS)m a x - lT (A V )m a x .< l> 2N5064 BT169B D E G TO-92 0.8A TO-92


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    PDF 2N5064 200iiA BT169B 200/iA BT148-400R -500R -600R OT-82 200juA C122F BT145-500R PHILIPS BT152-400R BTW38-600R 400v 50A Transistor SOT-186 600RU BTW38-600RU 600v BTW38

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE BSE D • bbSBTBl DOlbBOfl 5 ■ X - 2 S '- O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating * REPETITIVE N O N -R EP ETtT IV E PEAK PEAK ON-STATE R EVER SE VOLTAGE C U R R EN T lTsHmax.t2) V RHiyimax. RATE O F


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    PDF BT169B OT168. BRY39 50/uA BRY56

    BY359-1500

    Abstract: BYX4 9000V BYW96D
    Text: 32 Power Devices Double Diffused Rectifiers in o rd e r o f cu rre n t rating (cont.) Type No. Package Outline Average Forward Current Repetitive Peak Reverse Voltage Surge (NonRepetitive) Forward Current Reverse Recovery Time •f (AV) m ax.Cl ^RRNI max.


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    PDF BYV95A BYV96D BYW96D BY329-1000 OD-57 250ns OD-64 300ns 250ns BY359-1500 BYX4 9000V

    400v 20A ultra fast recovery diode

    Abstract: 400v 50A DIODE BYV54V50 BYV72E100/150/200 power Diode 200V 10A BYV72E-100 DIODE SMD 10A sod 81 50V 200A ultra fast diode 600v 2A ultra fast recovery diode
    Text: Power Devices Ultra Fast Recovery Epitaxial Rectifiers in o rd e r o f cu rre n t rating (cont.) Package Outline Average Forward Current Repetitive Peak Reverse Voltage NonRepetitive Reverse Avalanche Energy Surge (NonRepetitive) Forward Current ’ f |A V | m ax.(1)


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    PDF BYV72E-100 BYV44-300* BYV74-300* BYT230PIV-200< BYV54V-50* OT-93 O-220AB BYD31D BYD43-20 BYV98 400v 20A ultra fast recovery diode 400v 50A DIODE BYV54V50 BYV72E100/150/200 power Diode 200V 10A DIODE SMD 10A sod 81 50V 200A ultra fast diode 600v 2A ultra fast recovery diode