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    10N60C5 Search Results

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    10N60C5 Price and Stock

    IXYS Corporation IXKP10N60C5

    MOSFET N-CH 600V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXKP10N60C5 Tube 50
    • 1 -
    • 10 -
    • 100 $1.8528
    • 1000 $1.8528
    • 10000 $1.8528
    		Buy Now

    IXYS Corporation IXKP10N60C5M

    MOSFET N-CH 600V 5.4A TO220ABFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXKP10N60C5M Tube 50
    • 1 -
    • 10 -
    • 100 $1.8528
    • 1000 $1.8528
    • 10000 $1.8528
    		Buy Now

    IXYS Integrated Circuits Division IXKP10N60C5

    MOSFET DIS.10A 600V N-CH TO220AB COOLMOS THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXKP10N60C5
    • 1 $1.47356
    • 10 $1.47356
    • 100 $1.3396
    • 1000 $1.3396
    • 10000 $1.3396
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    IXYS Integrated Circuits Division IXKP10N60C5M

    MOSFET DIS.5.4A 600V N-CH PLUS220FP COOLMOS THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXKP10N60C5M
    • 1 $1.49732
    • 10 $1.49732
    • 100 $1.3612
    • 1000 $1.3612
    • 10000 $1.3612
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    10N60C5 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10N60C5M IXYS CoolMOS Power MOSFET Original PDF

    10N60C5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		10N60C5 O-220 PDF

    10N60C

    Abstract: IXKP10N60C5
    Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		10N60C5 O-220 20080523b 10N60C IXKP10N60C5 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		10N60C5M O-220 20090209d PDF

    10N60C

    Abstract: GS54
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET


    Original     		10N60C5M O-220 20070704a9 10N60C GS54 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5 COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		10N60C5 O-220 20080310a PDF

    10N60C

    Abstract: c16tj 10N60C5M
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		10N60C5M O-220 20080523c 10N60C c16tj 10N60C5M PDF

    10N60C

    Abstract: No abstract text available
    Text: IXKP 10N60C5 Advanced Technical Information ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		10N60C5 O-220 10N60C PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5M COOLMOS * Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		10N60C5M O-220 20080310b PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		10N60C5 O-220 20090209c PDF

    10N60C5M

    Abstract: kw0649 IGBT GS c16tj 10N60C
    Text: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions


    Original     		10N60C5M O-220 10N60C5M kw0649 IGBT GS c16tj 10N60C PDF

    10N60C

    Abstract: C3525
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET


    Original     		10N60C5M O-220 10N60C C3525 PDF

    10N60C

    Abstract: No abstract text available
    Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		10N60C5 O-220 10N60C PDF

    10N60C

    Abstract: 10N60C5M
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		10N60C5M O-220 20090209d 10N60C 10N60C5M PDF

    10N60C

    Abstract: No abstract text available
    Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		10N60C5 O-220 20090209c 10N60C PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF