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    107 NPN Search Results

    107 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    107 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    220V Automatic Voltage Regulator

    Abstract: PORTABLE SOLAR MOBILE CHARGER 220V 5A Automatic Voltage Regulator 6 pin TRANSISTOR SMD CODE XI 8550 NPN Transistor 220V Automatic Voltage Regulator circuit 220v to 24v switching regulator circuits 110v ac mobile charger SOLAR MOBILE CHARGER 220v ac to 3.7v dc converter
    Text: @ Your Convenience! Visit our web site www.sii-ic.com Contents POWER SUPPLY ICs . 8 MEMORY ICs . 96 SENSORS . 107 MINI ANALOG ICs . 115


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    TIP102

    Abstract: TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP100/101/102 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS


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    TIP100/101/102 O-220C TIP105/106/107 TIP100 TIP101 TIP102 TIP102 TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn PDF

    MPQ6700

    Abstract: 2N3904 die 2N3906 die CP192-CMPT3904-CT CP592-2N3251-CT MPQ3904 2N3904 2n3904 surface mount 2N3904 geometry MPQ6700 equivalent
    Text: PCN # 107 Notification Date: 29 June 2006 mailto:[email protected] http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip processes CP192V NPN and CP592V(PNP), small signal discrete semiconductors, wafers, and die in chip form.


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    CP192V CP592V CP392V CP792V 2N3904 CMPT3904 CMST3904 CMUT3904 MPQ6700 2N3904 die 2N3906 die CP192-CMPT3904-CT CP592-2N3251-CT MPQ3904 2N3904 2n3904 surface mount 2N3904 geometry MPQ6700 equivalent PDF

    TIP107

    Abstract: TIP102 of transistors npn pnp
    Text: TIP102, 107 Power Darlington Transistors Features: • NPN and PNP Plastic Power Darlington Transistors for Linear and Switching Applications. • TIP102 type NPN. • TIP107 type PNP. TO-220 Plastic Package Pin Configuration Dimensions Minimum Maximum A 14.42


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    TIP102, TIP102 TIP107 O-220 of transistors npn pnp PDF

    NPN Transistor 8A

    Abstract: TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107


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    TIP100/101/102 O-220 TIP105/106/107 TIP100 TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor PDF

    ic 4001 datasheet

    Abstract: ic 4001 MDR5100-18000
    Text: PHASE LOCKED OSCILLATOR MODEL MDR5100-18000 18 GHz Features ! ! ! ! Low Phase Noise: -107 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical Internal Reference Design Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (GHz)2 Mechanical Tuning


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    MDR5100-18000 20log ic 4001 datasheet ic 4001 MDR5100-18000 PDF

    TIP100

    Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP100, 101, 102 TIP105, 106, 107 TIP100, TIP101, TIP102 TIP105, TIP106, 107 NPN PLASTIC POWER TRANSISTORS


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    O-220 TIP100, TIP105, TIP101, TIP102 TIP106, TIP107 C-120 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 PDF

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    Abstract: No abstract text available
    Text: PHASE LOCKED OSCILLATOR MODEL MDR6100-18000 18 GHz Features ! ! ! ! Low Phase Noise: -107 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical External Reference Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (GHz)2 Mechanical Tuning


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    MDR6100-18000 20log PDF

    Untitled

    Abstract: No abstract text available
    Text: PHASE LOCKED OSCILLATOR MODEL MDR5100-18000 18 GHz Features ! ! ! ! Low Phase Noise: -107 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical Internal Reference Design Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (GHz)2 Mechanical Tuning


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    MDR5100-18000 MDR5100 PDF

    123AP

    Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
    Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge


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    123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130 PDF

    digital triggering scr

    Abstract: zener diode A36 regulated bipolar power supply connection 12V SCR FAST SWITCHING TO 48 SCR FAST SWITCHING design of mosfet based power supply detailed circuit on high voltage off scr High power SCR power supply 12v, 7v, 5v mosfet power supply
    Text:  Application Note MSAN-107 Understanding and Eliminating Latch-Up in CMOS Applications ISSUE 1 Contents • Semiconductor Device Considerations • Background on SCR’s • Parasitic Bipolar Structures in the ISO-CMOS Topology • Output SCR Structures


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    MSAN-107 digital triggering scr zener diode A36 regulated bipolar power supply connection 12V SCR FAST SWITCHING TO 48 SCR FAST SWITCHING design of mosfet based power supply detailed circuit on high voltage off scr High power SCR power supply 12v, 7v, 5v mosfet power supply PDF

    2N9303

    Abstract: cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc
    Text: NPN Silicon Transistors NPN Silicon Planar Transistors for low-level audio applications Common maximum ratings Type b v CFO V BVCSO V b v ebo PN PN PN PN PN PN PN PN PN PN - BC 107 BC 107 A BC 107 B BC 108 BC 108 A BC 108 B BC 108 C BC 1092 BC 109 B2 BC 109 C2


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    300mW 200mW V/10uA) 10mA/0 2N9303 2N24832 2N24843 cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc PDF

    TRANSISTOR BC 137

    Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
    Text: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case


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    23SbG5 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A Q60203-X108-B Q60203-X108-C 60203-X109 Q60203-X109-B TRANSISTOR BC 137 BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107 PDF

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


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    square wave tone generator

    Abstract: FX-207 sequential logic circuit experiments rs 307 FX-107 FX-307 1803 FX FX107
    Text: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATIOM SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only ’07 SERIES FX-107 GENERAL DESCRIPTION The FX -107, FX-207 and FX-307 are a powerful and flexible family of high performance monolithic signalling devices,


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    FX-107 FX-107, FX-207 FX-307 FX-207, FX-307, C-073 C-073 FX-307) square wave tone generator sequential logic circuit experiments rs 307 FX-107 1803 FX FX107 PDF

    BC109

    Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.


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    BC109 BC178 BC179. 100mA Jun108 bc107 BC 107 BC108 bc 230 BC179 bc 750 BC-1096 bc audio transistors PDF

    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


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    023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107 PDF

    T1P102

    Abstract: TIP-101
    Text: COE TIPIOO, 101,102 TIPI05, 106, 107 TIP100, TIP101, T1P102 TIP105, TIP106, 107 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications MIN MAX 14,42 9,63 3,56 16,51 10,67 4,83 0.90 1,40 3,88 2.79


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    TIPI05, TIP100, TIP101, T1P102 TIP105, TIP106, TIP107 TIP-101 PDF

    TLP100

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP105/106/107


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    TIP100/101/102 TIP105/106/107 TIP100 TIP101 TIP102 TLP100 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP100/101/102 TIP105/106/107 SGS-THOMSON POWER DARLINGTONS DESCRIPTIO N The TIP100, TIP101 and TIP102 are silicon epi­ taxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package, intended for use in power linear and swit­


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    TIP100/101/102 TIP105/106/107 TIP100, TIP101 TIP102 O-220 TIP105, TIP106 TIP107 100-T PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


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    TIP100/101/102 TIP101 TIP102 TIP100 PDF

    TIP100

    Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


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    TIP100/101 TIP105/106/107 O-220 TIP100 TIP101 TIP102 900MA TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor PDF

    09874

    Abstract: panasonic fk PN107F PN108CL PN108F 60N40 0F83 JW Electronic Systems
    Text: - PANASONIC INDL/ELEK-CSEMI} 72C D | 1,132054 0001073 3 6932852 PANASONIC INDLtELECTRONIC VOT'JWX ?2C 09873 * PN107F, PN108F PN 107F, PN108F '> U zi y NPN 7^ h Y =7 T-4I-W / S i NPN Phototransistors &SBfc$üffll$H!§ffl,/For Optical Control Systems • PN 107 F


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    b13Sfl54 0Dmfl73 PN107F, PN108F PN107F PN108F 75max 09874 panasonic fk PN107F PN108CL 60N40 0F83 JW Electronic Systems PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS


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    TIP100/101/102 TIP105 TIP106 TIP107 PDF