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Abstract: No abstract text available
Text: PRODUCT CHANGE NOTICE Contact Date: July 1, 2006 Implementation Date: July 8, 2006 DCS/PCN-1047 Alert Category: Alert Type: PCN #: Analog Semiconductor Product Termination PCN #: 1047 TITLE VFD Product Production Termination IMPACT AD6315, AD6312, AD6311, and AD7312 will not be available after July 30, 2006.
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DCS/PCN-1047
AD6315,
AD6312,
AD6311,
AD7312
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ssr schematic circuit
Abstract: HOW TO DRIVE SSR USING MOSFET DRIVER HSSR-7110 5V ssr MIL-STD-704A SSR schematics ac ssr 2N2906 54ACT00 74S05
Text: Low On-Resistance Solid-State Relays for High-Reliability Applications Application Note 1047 Introduction In military, aerospace, and commercial applications, the high performance, long lifetime, and immunity to shock and vibration give solid-state relays distinct advantages
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HSSR-7110
ssr schematic circuit
HOW TO DRIVE SSR USING MOSFET DRIVER
5V ssr
MIL-STD-704A
SSR schematics
ac ssr
2N2906
54ACT00
74S05
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HOW TO DRIVE SSR USING MOSFET DRIVER
Abstract: RCA Solid State 7110 resistor 330 Ohm resistor led specification sheet HEWLETT-PACKARD 1036 HSSR-7110 military ssr
Text: Low On-Resistance Solid-State Relays For High-Reliability Applications Application Note 1047 8 7 6 5 Introduction In military, aerospace, and commercial applications, the high performance, long lifetime, and immunity to shock and vibration give solidstate relays distinct advantages over electromechanical relays. The
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HSSR-7110
5091-4502E
HOW TO DRIVE SSR USING MOSFET DRIVER
RCA Solid State
7110
resistor 330 Ohm resistor led specification sheet
HEWLETT-PACKARD 1036
military ssr
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JDSU laser power supply
Abstract: m110 M110 laser IR switch diode 1321 Directed Energy TEM00 M110-1047-100 JDSU laser diode JDSU pump laser
Text: COMMERCIAL LASERS Q-Switched IR Laser M110 Series Key Features • 1047 nm output • Short pulse duration • Superior pulse stability • Pulse equalization mode • Burst mode • Reliability • Compact efficient package Applications • Seeder for OPO
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498-JDSU
5378-JDSU
JDSU laser power supply
m110
M110 laser
IR switch
diode 1321
Directed Energy
TEM00
M110-1047-100
JDSU laser diode
JDSU pump laser
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET SMA M/F DETECTOR R451.542.350 8 - 10 GHZ Series : DETECTOR All dimensions are in mm. . pn . ao Weight 1/2 9,6600 g Specification Issue : 1047 A In the effort to improve our products, we reserve the right to make changes judged to be necessary.
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET SMA M/F DETECTOR R451.530.410 2.9 - 3.5 GHZ Series : DETECTOR All dimensions are in mm. . pn . ao Weight 1/2 18,7300 g Specification Issue : 1047 C In the effort to improve our products, we reserve the right to make changes judged to be
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R451950000
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Hitachi DSA00276
Abstract: No abstract text available
Text: HM5264165F-75A HM5264805F-75A HM5264405F-75A 64M LVTTL interface SDRAM 133 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133 SDRAM ADE-203-1047 Z Preliminary Rev. 0.0 May. 17, 1999 Description The Hitachi HM5264165F is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi
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HM5264165F-75A
HM5264805F-75A
HM5264405F-75A
16-bit
PC/133
ADE-203-1047
HM5264165F
64-Mbit
1048576-word
Hitachi DSA00276
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DS24B33
Abstract: 1047 diode cmos esd sensitivity
Text: 6/13/2011 PRODUCT RELIABILITY REPORT FOR DS24B33 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email: [email protected]
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DS24B33
WJ946370A
WJ945484A
WJ046370D
DSQ3301-K04+
WW156001E
DS2431
ZJ163079AC
DS24B33
1047 diode
cmos esd sensitivity
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Nd-yag
Abstract: beamsplitter ruby laser Melles Griot
Text: Chpt. 14 Final 8/28/99 2:36 PM Page 14.8 Prisms & Retroreflectors Mirrors Cylindrical Optics Doublets & Triplets Singlets Available in: ✔ Production Quantities ✔ Custom Sizes Normal-Incidence Output Couplers Melles Griot output couplers are designed for normal incidence
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Untitled
Abstract: No abstract text available
Text: Bulletin I27189 11/04 IRKJ60/04A ADD-A-pakTM GEN V Power Modules STANDARD DIODES Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL approval pending 3500VRMS isolating voltage Full compatible TO-240AA
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I27189
IRKJ60/04A
3500VRMS
O-240AA
Al203
IRKJ60
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2932
Abstract: transistor c 6093 D1049N D428N D798N
Text: M6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VÒÒÍ 400 Våææ 500 Våææ 550 Våææ 270 V 335 V 370 V 1400 V 1600 V 1800 V ~ M6v2.xls Verlustl. Pã Luftmen. vÌ Schaltung pro KB [W] [ltr/s] Diode D
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D428N
D798N
D1049N
2932
transistor c 6093
D1049N
D428N
D798N
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6562
Abstract: transistor c 6093 D1049N D428N D798N M6V2
Text: M6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VÒÒÍ 400 Våææ 500 Våææ 550 Våææ 270 V 335 V 370 V 1400 V 1600 V 1800 V ~ M6v2.xls Verlustl. Pã Luftmen. vÌ Schaltung pro KB [W] [ltr/s] Diode D
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D428N
D798N
D1049N
6562
transistor c 6093
D1049N
D428N
D798N
M6V2
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zener 7.5 B 47
Abstract: zener 7.5 B 42 LL5230B zener 4.7v LL5223A
Text: ½ Watt ZENER DIODES 2.4V to 62V Data Sheet Mechanical Dimensions Description LL5221 . . . LL5265 DO-213AA (Mini-MELF) Features n WIDE VOLTAGE RANGE n 5 & 10% VOLTAGE TOLERANCES AVAILABLE n MEETS UL SPECIFICATION 94V-0 Maximum Ratings LL5221 . . . LL5265
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LL5221
LL5265
DO-213AA
zener 7.5 B 47
zener 7.5 B 42
LL5230B
zener 4.7v
LL5223A
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D1809N
Abstract: D849N D269N datasheet 346 766 D1069N D3301N D749N
Text: M1 - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D Thyristor
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D749N
D849N
D1069N
D1809N
1809N
D3301N
D1809N
D849N
D269N
datasheet 346 766
D1069N
D3301N
D749N
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D1049N
Abstract: D428N D4401N D660N D798N DIODE 1439 16-04 thyristor
Text: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 270 V 1400 V 335 V 1600 V 370 V 1800 V ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L
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D428N
D660N
D798N
D1049N
174suant
D1049N
D428N
D4401N
D660N
D798N
DIODE 1439
16-04 thyristor
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Phototransistor bp 101
Abstract: UAA 180 RED Color band DIODES UAA 180 A uaa180 tca 761 UAA 761 A TDA 1047 P-DIP-18 Q67000-A1104
Text: S IE M E N S LED Driver for Light Band Displays UAA 180 Bipolar IC Integrated circuit for driving 12 light emitting diodes. Corresponding to the input voltage, LEDs forming a light band are controlled sim ilar to a thermometer scale. By using an appropriate circuitry the brightness of the LEDs can be varied and the light
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Q67000-A1104
P-DIP-18
Phototransistor bp 101
UAA 180
RED Color band DIODES
UAA 180 A
uaa180
tca 761
UAA 761 A
TDA 1047
P-DIP-18
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Phototransistor bp 101
Abstract: uaa180 UAA 180 UAA 180 A TDA1046
Text: SIEMENS LED Driver for Light Band Displays UAA 180 Bipolar IC Integrated circuit for driving 12 light emitting diodes. Corresponding to the input voltage, LEDs forming a light band are controlled similar to a therm om eter scale. By using an appropriate circuitry the brightness of the LEDs can be varied and the light
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UAA180
67000-A1104
P-DIP-18
Phototransistor bp 101
uaa180
UAA 180
UAA 180 A
TDA1046
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UAA180
Abstract: UAA 180 Linear Thermometer ic UAA180 Phototransistor bp 101 TDA1046 LD461 tca 761 DIODE BP TDA 1047 TDA1047
Text: SIEMENS LED Driver for Light Band Displays UAA 180 Bipolar IC Integrated circuit for driving 12 light emitting diodes. Corresponding to the input voltage, LEDs forming a light band are controlled similar to a thermometer scale. By using an appropriate circuitry the brightness of the LEDs can be varied and the light
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Q67000-A1104
P-DIP-18
UAA180
UAA180
UAA 180
Linear Thermometer ic UAA180
Phototransistor bp 101
TDA1046
LD461
tca 761
DIODE BP
TDA 1047
TDA1047
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c3620
Abstract: c3260
Text: FAST SWITCHir Silicon diam. Type V RRM V DRM •t AV •t r m s ■t s m |2 t v T(TO) n f'djr'i d t crit dVD d t ,<crit V GT (KA) (A2S103) (V) (mQ) (A/,ts) (V/Ms) (V) Sine wave 10 ms (mm) (V) Sine wave 180° Th = 55°C (A) ATF 585 25 800 400 630 6.0 180
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a2s103)
b23M7
c3620
c3260
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6sq7gt
Abstract: 6Sq7 bk500 6SQ7GT tube triode IT 9-1 h 48 diode audio envelope detector diode 6sq7 tube ga 39 diode 6sq7-GT
Text: 6SQ7.6SQ7GT ANY MOUNTING POSITION SMALL 8-PIN WAFER OCTAL SMALL WAFER 8 - P I N OCTAL METAL S L E E V E THE 6SQ7 AND 6SQ7GT COMBINE TWO DIODE U NITS AND A HIGH-MU TRIODE IN A SINGLE EN VELO PE. EACH S E C T IO N USES A COMMON CATHODE. IT IS INTENDED FOR S E R V IC E AS A COMBINED DETECTOR, AVC SOURCE, AND HIGH G A IN AUDIO
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M1047
Abstract: BY359 M1045 M1048
Text: N AMER PHILIPS/DISCRETE E5E D • bbSBTHI QGSE343 fl ■ MAINTENANCE TYPE B Y 359 SERIES 7=03-; 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T 0-22 0 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,
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0D2S343
BY359
T0-220
BY359-
T-03-17
M1047
M1045
M1048
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BY359F-1500
Abstract: m2296 BY359F IEC134
Text: Philips Components BY359F—1500 FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery times. Their electrical isolation makes them ¡deal for mounting on a common heatsink alongside other
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by359f-i5oo
OT-186
BY359F-1500
m2296
BY359F
IEC134
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BY359-1000
Abstract: BY359
Text: BY359 SERIES M AIN TEN ANC E TYPE J v_ FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T 0-22 0 plastic envelopes, featuring fast recovery times. They are intended fo r use as an anti-parallel diode to GTOs and similar high-voltage switches,
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BY359
BY359--
BY359-1000
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M3105
Abstract: BY359F BY359F-1500 IEC134 M2296 BY359h
Text: I I N AMER PHILIPS/DISCRETE 25E D • bb53T31 0055351 7 ■ MAINTENANCE TYPE BY359F—1500 T - Ö Z - I 7 FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery
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bb53131
BY359Fâ
June1988
M1049
M3105
BY359F
BY359F-1500
IEC134
M2296
BY359h
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