Untitled
Abstract: No abstract text available
Text: FFPF30UP20S 30 A, 200 V, Ultrafast Diode Features Description • Ultrafast Recovery trr = 50 ns @ IF = 30 A The FFPF30UP20S is a ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other
|
Original
|
PDF
|
FFPF30UP20S
FFPF30UP20S
O-220F-2L
|
TA09909
Abstract: RURG5060
Text: RURG5060 Data Sheet January 2000 File Number 3211.3 50A, 600V Ultrafast Diode Features The RURG5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
|
Original
|
PDF
|
RURG5060
RURG5060
TA09909
|
HX8340B
Abstract: HX8340-B mx 362-0
Text: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver
|
Original
|
PDF
|
HX8340-B
176RGB
224October,
225October,
HX8340B
mx 362-0
|
Untitled
Abstract: No abstract text available
Text: 89HPES24T6 Data Sheet 24-Lane 6-Port PCI Express Switch Device Overview The 89HPES24T6 is a member of the IDT PRECISE family of PCI Express® switching solutions. The PES24T6 is a 24-lane, 6-port peripheral chip that performs PCI Express packet switching with a feature set
|
Original
|
PDF
|
89HPES24T6
24-Lane
89HPES24T6
PES24T6
24-lane,
BX420
420-ball
BXG420
|
RURU5060
Abstract: No abstract text available
Text: RURU5060 Data Sheet January 2000 File Number 2940.3 50A, 600V Ultrafast Diode Features The RURU5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
|
Original
|
PDF
|
RURU5060
RURU5060
|
fiber TRANSCEIVER CIRCUIT DIAGRAM rs232
Abstract: HFRD HFRD-14 Honeywell DBM 01 PCB PL-SLR-00-SG3-C3 fiber-optic photodiode for 850nm HFRD-15 photodiode for fiber-optic sensor 850 nm ULM Photonics DS1859
Text: Reference Design: HFRD-14.0 Rev.11;11/08 REFERENCE DESIGN Multirate 1Gbps to 4.25Gbps 850nm Small Form-Factor Pluggable (SFP) Transceiver Maxim Integrated Products Reference Design: Multirate (1Gbps to 4.25Gbps) 850nm SFP Transceiver Table of Contents 1. Overview. 2
|
Original
|
PDF
|
HFRD-14
25Gbps)
850nm
850nm
HFRD-15
RS-232
fiber TRANSCEIVER CIRCUIT DIAGRAM rs232
HFRD
Honeywell DBM 01 PCB
PL-SLR-00-SG3-C3
fiber-optic photodiode for 850nm
photodiode for fiber-optic sensor 850 nm
ULM Photonics
DS1859
|
SFP layout design
Abstract: 1367073 1367073-1 SLT2170-LN SLT2170-xN rd003 gerber file of inverter DS1858 DS3900 MAX3735
Text: Reference Design: HFRD-03.0 Rev.7; 11/08 As of July, 2008 this reference design board is no longer available. Gerber files and schematics are available upon request. REFERENCE DESIGN Multi-Rate 1Gbps – 2.7Gbps Small Form Factor Pluggable (SFP) Transmitter
|
Original
|
PDF
|
HFRD-03
RS232
DS3900
RD003-2
DS3900
SFP layout design
1367073
1367073-1
SLT2170-LN
SLT2170-xN
rd003
gerber file of inverter
DS1858
MAX3735
|
Untitled
Abstract: No abstract text available
Text: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60 V, 80 A, 6 mΩ Features Description • RDS on = 4.6 mΩ (Typ.), VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state
|
Original
|
PDF
|
FDB5800
|
AN167
Abstract: DS1847 DS1848
Text: Application Note 167 Considerations for the DS1847/1848 Look-Up Tables www.maxim-ic.com INTRODUCTION The DS1847 and DS1848 are digitally controlled resistors. The look-up tables in these parts are used to store Resistor positions that discretely compensate for the user’s application temperature dependence across the
|
Original
|
PDF
|
DS1847/1848
DS1847
DS1848
-40oC
102oC
-40oC
102oC;
AN167
|
Untitled
Abstract: No abstract text available
Text: FFH30S60S 30 A, 600 V STEALTH II Diode Features Description • Stealth Recovery, trr = 40 ns @ IF = 30 A • Max. Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II diode with soft recovery characteristics using silicon nitride passivated ion-implanted
|
Original
|
PDF
|
FFH30S60S
FFH30S60S
|
FDB5800
Abstract: No abstract text available
Text: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low Rdson ABS Systems Power Train Management
|
Original
|
PDF
|
FDB5800
O-263AB
FDB5800
|
SLT2170-LN
Abstract: HFRD-04 SLT2170-xN 1367073 photodiod modules DS1859 MAX3735A MAX3744 MAX3748 1367073-1
Text: Reference Design: HFRD-04.0 Rev. 7: 11/08 As of July, 2008 this reference design board is no longer available. Gerber files and schematics are available upon request. REFERENCE DESIGN 2.7Gbps, 1310nm Small Form Factor Pluggable SFP Transceiver Maxim Integrated Products
|
Original
|
PDF
|
HFRD-04
1310nm
RS232
DS3900
RD003-2
DS3900.
SLT2170-LN
SLT2170-xN
1367073
photodiod modules
DS1859
MAX3735A
MAX3744
MAX3748
1367073-1
|
FDC6020C_F077
Abstract: FDC6020C
Text: FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior
|
Original
|
PDF
|
FDC6020C
FDC6020C
FDC6020C_F077
|
N-Channel 2.5V
Abstract: fdc6000nz
Text: FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
PDF
|
FDC6000NZ
FDC6000NZ
N-Channel 2.5V
|
|
|
HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010
|
Original
|
PDF
|
HX8369-A00-DS
HX8369-A00
480RGB
285October,
HX8369
S1129
Himax
23 PIN TFT MOBILE DISPLAY
HX5186-A
|
F30S60S
Abstract: FFH30S60S
Text: FFH30S60S tm 30A, 600V, STEALTH II Diode Features • Stealth Recovery, Trr = 40 ns @ IF = 30 A • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted
|
Original
|
PDF
|
FFH30S60S
FFH30S60S
O-247-2L
F30S60S
|
TA9909
Abstract: rurg5060 RURG5050 RURG5040
Text: S E M I C O N D U C T O R RURG5040, RURG5050, RURG5060 50A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<65ns JEDEC STYLE 2 LEAD TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
|
Original
|
PDF
|
RURG5040,
RURG5050,
RURG5060
O-247
RURG5050
TA9909)
TA9909
rurg5060
RURG5040
|
F30S60S
Abstract: No abstract text available
Text: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial
|
Original
|
PDF
|
FFH30S60S
FFH30S60S
F30S60S
|
1e31a
Abstract: 1E30A 1E32A 1U-25 CLM2815 CLM2815AAT CLM2815AAT-X CLM2815AAU CLM2815AAU-X CLM2815AT
Text: 1.5A Low Dropout Voltage Regulator Adjustable & Fixed Output Fast Response CORPORATION CLM2815 FEATURES • • • • • • • • PRODUCT DESCRIPTION Adjustable Output . . . . . . . . . . . . . . . . . . . Down To 1.2V Fixed Output Voltages. . . . . . . . . . . . . . 1.5, 2.5, 3.3, 5.0V
|
Original
|
PDF
|
CLM2815
O-220,
O-263
O-252
LT1086/LT1586
1U-28
1U-29
1e31a
1E30A
1E32A
1U-25
CLM2815
CLM2815AAT
CLM2815AAT-X
CLM2815AAU
CLM2815AAU-X
CLM2815AT
|
Untitled
Abstract: No abstract text available
Text: RURG5060 November 2013 Data Sheet 50 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 75 ns @ IF = 50 A • Max Forward Voltage, VF = 1.6 V (@ TC = 25°C) Description • 600 V Reverse Voltage and High Reliability The RURG5060 is an ultrafast diode with low forward
|
Original
|
PDF
|
RURG5060
RURG5060
RURG50
|
fdb fairchild
Abstract: FDB5800
Text: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A DC-DC Converters and Off-Line UPS High performance trench technology for extermely low Rdson Low Gate Charge High power and current handling capability
|
Original
|
PDF
|
FDB5800
O-263AB
FDB5800
102oC,
fdb fairchild
|
TA09909
Abstract: RURG5060
Text: RURG5060 Data Sheet Title UR 060 bt A, 0V rafa ode utho eyrds A, 0V rafa wer pes, wer itch File Number 3211.3 50A, 600V Ultrafast Diode Features The RURG5060 is an ultrafast diode with soft recovery characteristics trr < 65ns). It has low forward voltage drop
|
Original
|
PDF
|
RURG5060
RURG5060
TA09909
|
fdb5800
Abstract: No abstract text available
Text: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A Motor Load Control High performance trench technology for extermely low Rdson DC-DC Converters and Off-Line UPS
|
Original
|
PDF
|
FDB5800
O-263AB
|
FDC6000NZ
Abstract: c2021
Text: FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
PDF
|
FDC6000NZ
FDC6000NZ
c2021
|
