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Catalog Datasheet	MFG & Type	PDF	Document Tags
nec 2401 Abstract: DE150-101N09A PIN diode SPICE model 101N09A Text: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE150-101N09A 1100P nec 2401 DE150-101N09A PIN diode SPICE model 101N09A
PIN diode SPICE model Abstract: DE150-101N09A rf power mosfet 1n spice 101N09A Text: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100	Original	PDF	DE150-101N09A 101N09A 1100P PIN diode SPICE model DE150-101N09A rf power mosfet 1n spice
nec 2401 Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09 Text: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR	Original	PDF	DE150-101N09A 1100P nec 2401 QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
DE275-101N30A Abstract: DE-275-101N30 de275 PIN diode SPICE model Text: DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE275-101N30A 101N09A 1100P DE275-101N30A DE-275-101N30 de275 PIN diode SPICE model