100V,100MA TRANSISTOR Search Results

100V,100MA TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

100V,100MA TRANSISTOR Price and Stock

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Microchip Technology Inc 2N1613A Bipolar Transistors - BJT NPN Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N1613A					1 - 10 - 100 $17.49 1000 $17.49 10000 $17.49	Buy Now
Microchip Technology Inc 2N3442 Bipolar Transistors - BJT NPN Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N3442					1 - 10 - 100 $35.24 1000 $35.24 10000 $35.24	Buy Now
Microchip Technology Inc JANS2N2920U Bipolar Transistors - BJT NPN Dual Transistors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	JANS2N2920U					1 - 10 - 100 $140.16 1000 $140.16 10000 $140.16	Buy Now
Microchip Technology Inc 2N4033 Bulk Through Hole PNP 1 Bipolar (BJT) Transistor 100 @ 100mA 5V 1A 800mW 80V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N4033					1 - 10 - 100 $8.27 1000 $8.1 10000 $8.1	Buy Now
Diotec Semiconductor AG BCM847BS Bipolar Transistor - SOT-363 - 45V - 100mA - NPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	BCM847BS					1 - 10 - 100 - 1000 - 10000 $0.0491	Buy Now

Find more 100V,100MA TRANSISTOR price and stock on Findchips.com

100V,100MA TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
fzt 655 Abstract: FZT marking code Text: A Product Line of Diodes Incorporated Green FZT7053 100V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 100V BVCBO > 100V IC = 1.5A high Continuous current hFE > 10k for very high gain @ 100mA	Original	PDF	FZT7053 OT223 100mA AEC-Q101 J-STD-020 MIL-STD-202, OT223 FZT7053 DS31895 fzt 655 FZT marking code
3A 100V npn LOW SATURATION VOLTAGE Abstract: TSD2098 TSD2098A Text: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics	Original	PDF	TSD2098A OT-89 100mA TSD2098ACY 3A 100V npn LOW SATURATION VOLTAGE TSD2098 TSD2098A
A08 transistor Abstract: No abstract text available Text: TSD965A Low Vcesat NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics	Original	PDF	TSD965A 100mA TSD965ACT A08 transistor
t6753 Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725 Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage	Original	PDF	ZDT6753 OT223) T6753 100MHz 500mA, FZT653 -50mA, -500mA, -100mA, t6753 transistor ic1A ic1a ZDT6753 FZT753 DSA003725
FMMT493 Abstract: FMMT593 DSA003699 Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 1.0 +-=5V V	Original	PDF	FMMT593 FMMT493 100mA -50mA, 100MHz -250mA -500mA, FMMT493 FMMT593 DSA003699
Untitled Abstract: No abstract text available Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 200 1.0 +-=5V	Original	PDF	FMMT593 FMMT493 100mA -50mA, 100MHz -250mA -500mA,
FZT951 Abstract: FZT953 fzt853 FZT851 DSA003718 Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps	Original	PDF	FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 fzt853 FZT851 DSA003718
ztx953 Abstract: IN 3319 B DSA003779 Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*	Original	PDF	ZTX953 -10mA, 100ms ztx953 IN 3319 B DSA003779
Untitled Abstract: No abstract text available Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage	Original	PDF	ZDT6753 OT223) T6753 -200mA* -100mA* -50mA, -500mA, -100mA, 100MHz
npn transistor 100v min Abstract: NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃	Original	PDF	HBDW93C O-220 100mA, 100mA npn transistor 100v min NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn
pnp transistor 1000v Abstract: FZT758 FZT658 DSA003716 Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE FZT658 PARTMARKING DETAIL FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6	Original	PDF	OT223 FZT758 FZT658 -200mA, -20mA, 20MHz -100mA, -100V -20mA pnp transistor 1000v FZT758 FZT658 DSA003716
IB 100MA NPN Abstract: HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃	Original	PDF	HBDW94C O-220 -100V -100V, -20mA -100mA IB 100MA NPN HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A
ZXT753 Abstract: No abstract text available Text: ZTX653DCSM ZTX753DCSM COMPLEMENTARY NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1 4 0.64 ± 0.06 (0.025 ± 0.003) 3 2 2.54 ± 0.13 (0.10 ± 0.005)	Original	PDF	ZTX653DCSM ZTX753DCSM ZTX653 ZXT753 -100mA 100MHz -500mA -50mA
zxt753 Abstract: ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC Text: ZTX653DCSM ZTX753DCSM NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 1 4 4.32 ± 0.13 (0.170 ± 0.005)	Original	PDF	ZTX653DCSM ZTX753DCSM ZTX653 ZXT753 -500mA -50mA zxt753 ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC

FZT753 Abstract: FZT653 DSA003715 Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL	Original	PDF	OT223 FZT753 FZT653 FZT753 FZT653 DSA003715
FZT653 Abstract: FZT753 DSA003712 Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE FZT753 PARTMARKING DETAIL FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.	Original	PDF	OT223 FZT653 FZT753 FZT653 FZT753 DSA003712
Bv 42 transistor Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	PDF	ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
ZX5T953GTA Abstract: ZX5T953G ZX5T953GTC x5t953 Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC	Original	PDF	ZX5T953G OT223 -100V OT223 ZX5T953GTA ZX5T953GTC ZX5T953GTA ZX5T953G ZX5T953GTC x5t953
ZXTP2013Z Abstract: ZXTP2013ZTA Text: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line	Original	PDF	ZXTP2013Z -100V ZXTP2013ZTA ZXTP2013Z ZXTP2013ZTA
b063 Abstract: Concord Electronics DDG0133 Pirgo Electronics Text: nnA ^ 5 9 2 A P T :A P I ELECTRONICS INC ELECTRONICS 13A0133 INC POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP T O -5 100V at 100mA ICEX lOOfiA max at VB E off =1.5V, V CE=100V ICBO 100p,A at 100V XEBO 0.5mA at 7V HPE • <40 min at Ic=100mA, V CE=1V vBE(sat)	OCR Scan	PDF	13A0133 DDG0133 100mA 100mA, 500mA, 100mA 125mA b063 Concord Electronics Pirgo Electronics
Untitled Abstract: No abstract text available Text: nn4^q92 A P I A P I ELECTRONICS 13A0133 ELECTRONICS INC" INC IB De J 0043STB DD00133 D J l POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP TO-5 100V at 100mA XCEK 100\|i,A max at VB E off =1.5V, V QE=100V ICBO 100[xA at 100V XEBO 0.5mA at 7V HPE < 40 min at Ic=100mA, V CE=1V	OCR Scan	PDF	13A0133 0043STB DD00133 PG6003 100mA 100mA, 500mA, 125mA
PIR60 Abstract: No abstract text available Text: 0043592 A P I ELECTRONICS A P I '7 INC 1 7 ^ a > ? ~«i/ " m i>ËÏ 00435=15 0000131 7 I . y • . 13 A 013 "il 7: ELECTRONICS INC POWER TRANSISTOR ENGINEERING BULLETIN ' '1 AMP NPN TO-5 •CEX PG5003 -BVCEO 100V at 100mA 100UA max at V CE=100V VBE off = 1 »5V	OCR Scan	PDF	IA3A0131 100mA 500mA, PIR60
API Electronics Abstract: iC-LA vce 1v Pirgo Electronics Text: 0043592 A P I E L E CT RO N IC S A P I ELECTRONICS INC INC POWER TRANSISTOR ENGINEERING BULLETIN • . 13 A 01 31 7^o> *13 D E I 00435=15 -• _ 0000131 7 - y - ; '1 AMP NPN TO-5 PG5003 100V at 100mA .BV CEO "CEX lOO^A max at VCE=100V CBO . VBE off =1»5V	OCR Scan	PDF	100mA 500mA, API Electronics iC-LA vce 1v Pirgo Electronics
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

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100V,100MA TRANSISTOR Search Results

100V,100MA TRANSISTOR Result Highlights (5)

100V,100MA TRANSISTOR Price and Stock

Microchip Technology Inc 2N1613A

Microchip Technology Inc 2N3442

Microchip Technology Inc JANS2N2920U

Microchip Technology Inc 2N4033

Diotec Semiconductor AG BCM847BS

100V,100MA TRANSISTOR Datasheets Context Search

fzt 655

3A 100V npn LOW SATURATION VOLTAGE

A08 transistor

t6753

FMMT493

Untitled

FZT951

ztx953

Untitled

npn transistor 100v min

pnp transistor 1000v

IB 100MA NPN

ZXT753

zxt753

FZT753

FZT653

Bv 42 transistor

ZX5T953GTA

ZXTP2013Z

b063

Untitled

PIR60

API Electronics

y51 h 120c