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    100N TRANSISTOR Search Results

    100N TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    100N TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC982

    Abstract: TO226AA 92PU45 MPSU45 MPS-U45 2S0114 2S01140 2SC3132 b0477
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max tr Max tf Max TOper Max (Hz) (A) (8) (8) ee) 125M 75M 75M 75M 75M 75M 200M 200M 100M 125M 100n 500n 20u 500n 500n 500n 100n 100n 100n 100n


    Original     		PDF MPSA14 040C1 040C2 040C3 BC517 BC517S NS0151 MPSW13 2SC982 TO226AA 92PU45 MPSU45 MPS-U45 2S0114 2S01140 2SC3132 b0477

    bvc49

    Abstract: TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ic Max PD Max (V) (A) (W) hFE Min Max fT ICBO Max (Hz) (A) 120M 0.1u 100n 100m 100n 10u tr Max (8) tf Max Toper Max (8) (Oe) 400n 150 150 150 150 150 Package Style NPN Darlington Transistors, (Cont'd)


    Original     		PDF 2S01111 2S01198A 2S0946A MPS6725 2SC3985 2S01661M 2S01521 92PU45A 2N6725 bvc49 TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001

    ADG200-series

    Abstract: ADG200CJ MIL-STO-883
    Text: 01CMOS ProtectedDualSPSTAnalogSwitch ADG200 ANALOG W DEVICES FEATURES latch.Proof DI CMOS Overvoltage.Proof: VSUPPL Y :!:25V Superior DG-200 Replacement Break-Before-MakeSwitching Action RON: 100n max over Full Temperature Range Direct TTl/CMOS Interface OBS


    Original     		PDF DG-200 01CMOS ADG200 ADG200Cj ADG200BP ADG200BA ADG200AP ADG200 O-100 102mml. ADG200-series MIL-STO-883

    Untitled

    Abstract: No abstract text available
    Text: CSC1187Y Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20


    Original     		PDF CSC1187Y Freq400M

    Untitled

    Abstract: No abstract text available
    Text: TPS63A Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)


    Original     		PDF TPS63A Freq500M

    Untitled

    Abstract: No abstract text available
    Text: TPS62A Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)


    Original     		PDF TPS62A Freq500M

    Untitled

    Abstract: No abstract text available
    Text: SST1139 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)25


    Original     		PDF SST1139 Freq850M

    Untitled

    Abstract: No abstract text available
    Text: 2SC3954 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)300m Absolute Max. Power Diss. (W)8.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC3954 Freq400M

    Untitled

    Abstract: No abstract text available
    Text: ESM121RS Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)13 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n


    Original     		PDF ESM121RS

    Untitled

    Abstract: No abstract text available
    Text: BSM181F Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)800 V(BR)GSS (V)20 I(D) Max. (A)34 Absolute Max. Power Diss. (W)700 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A)250u I(GSS) Max. (A)100n


    Original     		PDF BSM181F Code4-122 NumberTR00400122

    SME120N20

    Abstract: No abstract text available
    Text: SME120N20 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)200 V(BR)GSS (V)40 I(D) Max. (A)120 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n


    Original     		PDF SME120N20 time50nÃ

    Untitled

    Abstract: No abstract text available
    Text: BF547 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10


    Original     		PDF BF547 Freq800M

    Untitled

    Abstract: No abstract text available
    Text: SKM151 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)48 Absolute Max. Power Diss. (W)625 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.20 I(DSS) Min. (A)250u I(GSS) Max. (A)100n


    Original     		PDF SKM151 time25nà Code4-19 NumberTR00400019

    Untitled

    Abstract: No abstract text available
    Text: KSC2786 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)


    Original     		PDF KSC2786 Freq400M

    Untitled

    Abstract: No abstract text available
    Text: ESM041R Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)8.0 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n


    Original     		PDF ESM041R

    Untitled

    Abstract: No abstract text available
    Text: BSM121 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)130 Absolute Max. Power Diss. (W)700 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A)250u I(GSS) Max. (A)100n


    Original     		PDF BSM121 Code4-122 NumberTR00400122

    Untitled

    Abstract: No abstract text available
    Text: 2N3953 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10


    Original     		PDF 2N3953

    Untitled

    Abstract: No abstract text available
    Text: 2SC2845 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)25 I(C) Max. (A)70m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC2845

    Untitled

    Abstract: No abstract text available
    Text: BC817-16W Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A) Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20


    Original     		PDF BC817-16W Freq100M

    Untitled

    Abstract: No abstract text available
    Text: STH17 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)20m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)


    Original     		PDF STH17 Freq800M

    Untitled

    Abstract: No abstract text available
    Text: ESM042R Transistors Full Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)8.0 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n


    Original     		PDF ESM042R

    Untitled

    Abstract: No abstract text available
    Text: BSM151 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)48 Absolute Max. Power Diss. (W)625 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A)250u I(GSS) Max. (A)100n


    Original     		PDF BSM151 Code4-122 NumberTR00400122

    Untitled

    Abstract: No abstract text available
    Text: ESM102RS Transistors Full Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)12 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n


    Original     		PDF ESM102RS

    transistor 2n3054

    Abstract: 2N3054
    Text: GAE GREAT AMERICAN ELECTROINCS 2N3054 Silicon NPN medium power transistor 2N3054 is intended for general switching and amplifier applications. Package Type: TO-66 ABSOLUTE IVAXIMUM RATINGS TCASE = 25°C SYMBOL PARAMETERS Collector-Emitter Voltage REB=100n


    OCR Scan     		PDF 2N3054 2N3054 100mAdc, 30Vdc, 90Vdc, 500mAdc, 50mAdc 200mAdc, transistor 2n3054