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    FMM-1718

    Abstract: FMMT720 FMM1717 1DA SOT23 FMMT617 FMMT618 FMMT619 FMMT717 FMMT718 FMMT722
    Text: E-1 I H ‘“”’’’”T’’’’” I I THERMAL CHARACTERISTICS AND DERATING INFORMATION .60 -40 -20 ?0 40 60 AMBIENT TEMPERATURE DEG DERATING 00 >00 120 140 160 CELSIUS CURVE 200 : l.1 150 s z < !7J 100 m s 2 z $ !- 50 O.lms 1ms 1Oms PuLSE MAXIMUM


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    PDF 15mmxl FMM1717 FMM1720 FMMT723 FMM-1718 FMMT722 625mW 100mA FMM-1718 FMMT720 FMM1717 1DA SOT23 FMMT617 FMMT618 FMMT619 FMMT717 FMMT718 FMMT722

    Untitled

    Abstract: No abstract text available
    Text: central" CMPTA29 Semiconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring


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    PDF CMPTA29 CMPTA29 OT-23 100hA 100mA, 100mA 100itiA 100MHz

    2SC2824

    Abstract: 2SA1184 AC46C
    Text: TOSHIBA { D I S C R E T E / O P T Oî 9097250 TOSHIBA DlF| T O ^ S O 56C < 0 I S C R E T E /O P T O 07606 DD07t.Gt D r - 3 3 - 0 7 2SC2824 S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES:


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    PDF r-55-Ã 2SC2824 2SA1184. 2SC2824 2SA1184 AC46C

    Untitled

    Abstract: No abstract text available
    Text: Central CMPTA29 Sem iconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring


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    PDF CMPTA29 OT-23 100mA, 100mA 100itiA 100MHz

    microwave oscillator

    Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
    Text: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n ­ HIGH fS


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    PDF 3/w23 NE568 200mW NE568 NE56855 NES6851 microwave oscillator transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE56854