100IB Search Results

100IB Result Highlights (5)

Part	Manufacturer	Description
HIP2100IB	Renesas Electronics Corporation	100V/2A Peak High-Frequency Half Bridge Driver with CMOS Logic Inputs, SOICN, /Tube
HFA1100IBZ96	Renesas Electronics Corporation	850MHz, Low Distortion Current Feedback Operational Amplifiers, SOICN, /Reel
HIP2100IBZT7A	Renesas Electronics Corporation	100V/2A Peak High-Frequency Half Bridge Driver with CMOS Logic Inputs
HIP2100IBZT	Renesas Electronics Corporation	100V/2A Peak High-Frequency Half Bridge Driver with CMOS Logic Inputs
HIP2100IBZ	Renesas Electronics Corporation	100V/2A Peak High-Frequency Half Bridge Driver with CMOS Logic Inputs

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Renesas Electronics Corporation HIP2100IBZT7A IC GATE DRVR HALF-BRIDGE 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HIP2100IBZT7A	Cut Tape	6,592		1	1 $5.67 10 $3.807 100 $2.7829 1000 $2.7829 10000 $2.7829	Buy Now
	HIP2100IBZT7A	Digi-Reel	6,592		1	1 $5.67 10 $3.807 100 $2.7829 1000 $2.7829 10000 $2.7829	Buy Now
	HIP2100IBZT7A	Reel	6,250		250	1 - 10 - 100 - 1000 $2.52008 10000 $2.08488	Buy Now
Flip Electronics	HIP2100IBZT7A		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics America	HIP2100IBZT7A	Tape & Reel (TR)	6,592		1	1 $5.67 10 $3.807 100 $2.7829 1000 $2.27901 10000 $2.136	Buy Now
Renesas Electronics Corporation HIP2100IBZT IC GATE DRVR HALF-BRIDGE 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HIP2100IBZT	Cut Tape	4,851		1	1 $5.67 10 $3.807 100 $2.7829 1000 $2.22676 10000 $2.22676	Buy Now
	HIP2100IBZT	Digi-Reel	4,851		1	1 $5.67 10 $3.807 100 $2.7829 1000 $2.22676 10000 $2.22676	Buy Now
	HIP2100IBZT	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $2.08488	Buy Now
Avnet Americas	HIP2100IBZT	Reel		18 Weeks	2,500	1 $3.71 10 $3.71 100 $3.71 1000 $3.71 10000 $3.71	Buy Now
Mouser Electronics	HIP2100IBZT		2,380			1 $4.85 10 $3.23 100 $2.74 1000 $2.22 10000 $2.08	Buy Now
Newark	HIP2100IBZT	Cut Tape	974		1	1 $3.68 10 $3.13 100 $2.7 1000 $2.28 10000 $2.28	Buy Now
	HIP2100IBZT	Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ameya Holding Limited	HIP2100IBZT		3,402			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	HIP2100IBZT			20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics America	HIP2100IBZT	Tape & Reel (TR)	4,851		1	1 $5.67 10 $3.807 100 $2.7829 1000 $2.22676 10000 $2.08488	Buy Now
Renesas Electronics Corporation HIP2100IBZ IC GATE DRVR HALF-BRIDGE 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HIP2100IBZ	Tube	3,973		1	1 $5.67 10 $3.807 100 $2.7829 1000 $2.2303 10000 $2.06322	Buy Now
Avnet Americas	HIP2100IBZ	Tube			1,960	1 $3.71 10 $3.71 100 $3.71 1000 $3.71 10000 $3.71	Buy Now
	HIP2100IBZ	Tube		18 Weeks	1,960	1 $3.71 10 $3.71 100 $3.71 1000 $3.71 10000 $3.71	Buy Now
Mouser Electronics	HIP2100IBZ		11,632			1 $3.83 10 $2.71 100 $2.46 1000 $2.08 10000 $2.05	Buy Now
Newark	HIP2100IBZ	Bulk	1,320		1	1 $1.86 10 $1.86 100 $1.86 1000 $1.86 10000 $1.86	Buy Now
TME	HIP2100IBZ				1	1 $4.26 10 $3.84 100 $3.05 1000 $3.05 10000 $3.05	Get Quote

Avnet Silica	HIP2100IBZ			20 Weeks	980	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics America	HIP2100IBZ	Tube	3,973		1	1 $5.67 10 $3.807 100 $2.7829 1000 $2.2303 10000 $2.06322	Buy Now
Panduit Corp MP100-IB REPLACEMENT MP100 IMPACT BUMPER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MP100-IB	Bulk			1	1 $71.87 10 $71.87 100 $71.87 1000 $71.87 10000 $71.87	Buy Now
Avnet Americas	MP100-IB	Bulk		8 Weeks	1	1 $47.57 10 $47.57 100 $47.57 1000 $47.57 10000 $47.57	Buy Now
Mouser Electronics	MP100-IB					1 $71.85 10 $69.8 100 $63.65 1000 $63.65 10000 $63.65	Get Quote
Sager	MP100-IB				1	1 $62.55 10 $56.47 100 $50.2 1000 $49.59 10000 $49.59	Buy Now
TestEquity LLC	MP100-IB					1 $54.08 10 $54.08 100 $54.08 1000 $54.08 10000 $54.08	Buy Now
Renesas Electronics Corporation HFA1100IB IC OPAMP CFA 1 CIRCUIT 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HFA1100IB	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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100IB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC4390 Abstract: ITR06668 ITR06669 VEBO-15V Text: 2SC4390 Ordering number : EN2958B SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • • • • • Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A).	Original	PDF	2SC4390 EN2958B VEBO15V) 2SC4390 ITR06668 ITR06669 VEBO-15V
HE6009 Abstract: HJ122 Text: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 1/4 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ122 is designed for use in general purposes and low speed switching applications.	Original	PDF	HE6009 HJ122 HJ122 O-252 HE6009
marking 3A sot-89 Abstract: BTD2098LM3 Text: CYStech Electronics Corp. Spec. No. : C850M3 Issued Date : 2004.02.27 Revised Date :2005.10.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2098LM3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics	Original	PDF	C850M3 BTD2098LM3 BTB1386LM3 OT-89 UL94V-0 marking 3A sot-89 BTD2098LM3
Untitled Abstract: No abstract text available Text: NTE2505 Silicon NPN Transistor Low Frequency, General Purpose Amp Features: D High Current Capacity D High DC Current Gain D Low Collector Emitter Saturation Voltage D High Emitter Base Breakdown Voltage Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	PDF	NTE2505 100IB1 100IB2 700mA,
FJMA790 Abstract: No abstract text available Text: FJMA790 tm PNP Epitaxial Silicon Transistor High current surface mount PNP silicon switching transistor for load management in portable applications • High Collector current • Low Collector-Emitter Saturation Voltage • RoHS Compliant RoHS Compliant Pin 1	Original	PDF	FJMA790 FJMA790
HM200 Abstract: HM200101 HM117 hm2001 Text: HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2007.03.02 Page No. : 1/5 MICROELECTRONICS CORP. HM117 PNP EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM117 is designed for use in general purpose amplifier and low-speed switching	Original	PDF	HM200101 HM117 OT-89 HM117 10sec HM200 HM200101 hm2001
HE6009 Abstract: HJ122 Y2 MARKING Text: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.	Original	PDF	HE6009 HJ122 O-252 HJ122 200oC 183oC 217oC 260oC 245oC HE6009 Y2 MARKING
he8050 Abstract: No abstract text available Text: HI-SINCERITY Spec. No. : HE6112 Issued Date : 1992.09.30 Revised Date : 2004.11.29 Page No. : 1/4 MICROELECTRONICS CORP. HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B	Original	PDF	HE6112 HE8050 HE8050 183oC 217oC 260oC
D9D TRANSISTOR Abstract: SOT-23 marking D9D HMBT8050 transistor d9d npn D9D D9D SOT D9D sot23 d9d marking code HMBT8550 sot-23 d9d Text: HI-SINCERITY Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA	Original	PDF	HE6812 HMBT8050 HMBT8050 OT-23 150mA HMBT8550 183oC 217oC 260oC D9D TRANSISTOR SOT-23 marking D9D transistor d9d npn D9D D9D SOT D9D sot23 d9d marking code HMBT8550 sot-23 d9d
Untitled Abstract: No abstract text available Text: HI-SINCERITY Spec. No. : HE9028 Issued Date : 1994.01.25 Revised Date : 2004.09.24 Page No. : 1/4 MICROELECTRONICS CORP. HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications.	Original	PDF	HE9028 HI10387 HI10387 O-251 183oC 217oC 260oC
2SD1085 Abstract: No abstract text available Text: 2SD1085 K Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25°C Item TO-220AB Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 300 V ————————————————————–	Original	PDF	2SD1085 O-220AB 100IB
2SC4204 Abstract: ITR06479 ITR06480 ITR06481 Text: Ordering number:ENN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers. unit:mm 2003B Features [2SC4204] 5.0 4.0 4.0 5.0 · Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .	Original	PDF	ENN2531A 2SC4204 2003B 2SC4204] VEBO15V) 2SC4204 ITR06479 ITR06480 ITR06481
BTD2118LJ3 Abstract: No abstract text available Text: CYStech Electronics Corp. Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Features • Low VCE sat , VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics	Original	PDF	C850J3 BTD2118LJ3 BTB1412LJ3 O-252 UL94V-0 BTD2118LJ3
Transistor B1205 Abstract: c815 btb18 B1205 BTB1205I3 Text: CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1205I3 BVCEO IC RCESAT Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 1/ 6 -20V -5A 127mΩ typ. Features • Low VCE sat , VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA	Original	PDF	BTB1205I3 C815I3 -60mA BTB1805I3 O-251 UL94V-0 Transistor B1205 c815 btb18 B1205 BTB1205I3

HJ112 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2002.08.13 Page No. : 1/4 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and lowspeed switching applications.	Original	PDF	HE6030 HJ112 HJ112 O-252
HE8051 Abstract: No abstract text available Text: HI-SINCERITY Spec. No. : HE6115-B Issued Date : 1992.09.30 Revised Date : 2000.09.20 Page No. : 1/3 MICROELECTRONICS CORP. HE8051 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.	Original	PDF	HE6115-B HE8051 HE8051
IC 4047 datasheet Abstract: HTIP127 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6713 Issued Date : 1993.01.13 Revised Date : 2002.05.07 Page No. : 1/4 HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description The HTIP127 is designed for use in general purpose amplifier and lowspeed switching applications.	Original	PDF	HE6713 HTIP127 HTIP127 O-220 IC 4047 datasheet
D9D TRANSISTOR Abstract: SOT-23 marking D9D transistor d9d npn D9D D9D SOT HMBT8050 marking D9D D9D sot23 d9d marking code sot-23 d9d Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. Features SOT-23 • High DC Current hFE=150-400 at IC=150mA	Original	PDF	HE6812 HMBT8050 HMBT8050 OT-23 150mA HMBT8550 D9D TRANSISTOR SOT-23 marking D9D transistor d9d npn D9D D9D SOT marking D9D D9D sot23 d9d marking code sot-23 d9d
HT112 Abstract: No abstract text available Text: HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2003.01.04 Page No. : 1/4 MICROELECTRONICS CORP. HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and lowspeed switching applications.	Original	PDF	HT200101 HT112 HT112 O-126
IC 4047 datasheet Abstract: HTIP112 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2002.03.28 Page No. : 1/4 HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP112 is designed for use in general purpose amplifier and lowspeed switching applications.	Original	PDF	HE200203 HTIP112 HTIP112 O-220 IC 4047 datasheet
ic 1496 specifications Abstract: HTIF102 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9212-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/3 HTIF102 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIF102 is designed for use in general purpose amplifier and low-speed switching applications.	Original	PDF	HE9212-A HTIF102 HTIF102 ic 1496 specifications
HTIF122 Abstract: ic 1496 specifications Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9215-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/3 HTIF122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIF122 is designed for use in general purpose amplifier and low-speed switching applications.	Original	PDF	HE9215-A HTIF122 HTIF122 ic 1496 specifications
17p104 Abstract: blf 178 ROHC 17p107 IR LFN tt 250 n 16 kof HMAF 8345B TL 413 ami jbi 120 Text: MOSÎ M O S In te g ra te d C ircu it JU /¿PD17104 fi, R O M I K / 'K h 512 x 16 , R A M 1 6 x 4 t:'y K I/O PD17104 h 16^Tfl\|J5St$ ? -f - v - r ^ n z i> h p — 5 T T o ^ •/ i ' J CPU LT^/zaò, / z J C £ <75T # : ^ Uv * ? A t if c 1 7 K 7 - ^ r ^ f t	OCR Scan	PDF	uPD17104 17p104 blf 178 ROHC 17p107 IR LFN tt 250 n 16 kof HMAF 8345B TL 413 ami jbi 120
Bc140 Abstract: bc141 BC-141 Text: BC140 BC141 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES 1 CASE TO-39 THE BC140, BC141 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THE BC140, BC141 -ARE COMPLEMENTARY TO	OCR Scan	PDF	BC140 BC141 BC140, BC141 BCl60, 100mA 100ibA Bc140 BC-141

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100IB Search Results

100IB Result Highlights (5)

100IB Price and Stock

Renesas Electronics Corporation HIP2100IBZT7A

Renesas Electronics Corporation HIP2100IBZT

Renesas Electronics Corporation HIP2100IBZ

Panduit Corp MP100-IB

Renesas Electronics Corporation HFA1100IB

100IB Datasheets Context Search

2SC4390

HE6009

marking 3A sot-89

Untitled

FJMA790

HM200

HE6009

he8050

D9D TRANSISTOR

Untitled

2SD1085

2SC4204

BTD2118LJ3

Transistor B1205

HJ112

HE8051

IC 4047 datasheet

D9D TRANSISTOR

HT112

IC 4047 datasheet

ic 1496 specifications

HTIF122

17p104

Bc140