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    SEMIKRON SKM100GB125DN

    Igbt Array & Module Transistor, Dual N Channel, 100 A, 3.3 V, 1.2 Kv, Module Rohs Compliant: Yes |Semikron SKM100GB125DN
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    Newark SKM100GB125DN Bulk 1
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    TME SKM100GB125DN 1
    • 1 $178
    • 10 $141.14
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    Richardson RFPD SKM100GB125DN 80 1
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    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB125DN Absolute Maximum Ratings Symbol Conditions IGBT 6$2 $ $19 6:2 #< (, 6 SEMITRANSTM 2N Ultra Fast IGBT Module SKM 100GB125DN !9  3 *+ E  BE (< 3 *4+ 5$ Characteristics Symbol Conditions IGBT 6$2),    Typical Applications


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    Abstract: No abstract text available
    Text: SKM 100GB125DN  3 -4 5$        Absolute Maximum Ratings Symbol Conditions IGBT 6$2 (7 3 -4 5$ (7 3 *4+ 5$ $ *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -+ % D E+ BBB F *4+


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    PDF 100GB125DN

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    Abstract: No abstract text available
    Text: SKM 100GB125DN  3 -4 5$        Absolute Maximum Ratings Symbol Conditions IGBT 6$2 (7 3 -4 5$ (7 3 *4+ 5$ $ *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -+ % D E+ BBB F *4+


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    PDF 100GB125DN

    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB125DN Absolute Maximum Ratings Symbol Conditions IGBT 6$2 $ $19 6:2 #< (, 6 SEMITRANSTM 2N Ultra Fast IGBT Module SKM 100GB125DN !19 ( 3 -4 )8+, 5$ ( 3 -4 )8+, 5$  3 *  !9  3 *+ E  BE (< 3 *4+ 5$ ! 3@ $ Characteristics Symbol Conditions


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    PDF 100GB125DN

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    Abstract: No abstract text available
    Text: SKM 100GB125DN  3 -4 5$        Absolute Maximum Ratings Symbol Conditions IGBT 6$2 (7 3 -4 5$ (7 3 *4+ 5$ $ *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -+ % D E+ BBB F *4+


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    PDF 100GB125DN

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    Abstract: No abstract text available
    Text: SKM 100GB125DN  3 -4 5$        Absolute Maximum Ratings Symbol Conditions IGBT 6$2 (7 3 -4 5$ (7 3 *4+ 5$ $ *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -+ % D E+ BBB F *4+


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    diode F4 6e

    Abstract: No abstract text available
    Text: SKM 100GB125DN Absolute Maximum Ratings Symbol Conditions IGBT 6$2 $ $19 6:2 #< (, 6 SEMITRANSTM 2N Ultra Fast IGBT Module SKM 100GB125DN !9  3 *+ E  BE (< 3 *4+ 5$ Characteristics Symbol Conditions IGBT 6$2),    Typical Applications


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    PDF 100GB125DN diode F4 6e

    SJ 76 A DIODE

    Abstract: No abstract text available
    Text: SKM 100GB125DN G% R LS TC+ / * 00 ,6&)7420) 08)%2<2)5 Absolute Maximum Ratings Symbol Conditions IGBT UCQ1 GV R LS TC ?C GV R ISJ TC ?CPY Ultra Fast IGBT Module SKM 100GB125DN 680% ILJJ U IJJ D G%'0) R XS TC XJ D ISJ D [ LJ U GV R ILS TC IJ _0 G%'0) R LS TC


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    PDF 100GB125DN SJ 76 A DIODE

    skm100gb125dn

    Abstract: No abstract text available
    Text: SKM 100GB125DN  3 -4 5$        Absolute Maximum Ratings Symbol Conditions IGBT 6$2 (7 3 -4 5$ (7 3 *4+ 5$ $ *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -+ % D E+ BBB F *4+


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    PDF 100GB125DN skm100gb125dn

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    Abstract: No abstract text available
    Text: SKM 100GB125DN  3 -4 5$        Absolute Maximum Ratings Symbol Conditions IGBT 6$2 $ $1: (7 3 -4 5$ (7 3 *4+ 5$ Ultra Fast IGBT Module SKM 100GB125DN  *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % (


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    PDF 100GB125DN