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Kyocera AVX Components 100B4R7BW500XT1K CAP CER 4.7PF 500V P90 1111
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DigiKey	100B4R7BW500XT1K	Digi-Reel	2,051		1	1 $8.67 10 $6.028 100 $4.6214 1000 $4.04912 10000 $4.04912	Buy Now
	100B4R7BW500XT1K	Cut Tape	2,051		1	1 $8.67 10 $6.028 100 $4.6214 1000 $4.04912 10000 $4.04912	Buy Now
	100B4R7BW500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $3.87001 10000 $3.72163	Buy Now
Avnet Americas	100B4R7BW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B4R7BW500XT1K					1 $7.02 10 $5.34 100 $4.09 1000 $3.39 10000 $3.29	Get Quote
Richardson RFPD	100B4R7BW500XT1K				1,000	1 - 10 - 100 - 1000 $2.54 10000 $2.38	Buy Now
Avnet Asia	100B4R7BW500XT1K			18 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B4R7BW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B4R7BW500XC100)
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Avnet Americas	100B4R7BW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B4R7BW500XC100					1 $6.85 10 $5.94 100 $4.52 1000 $4.52 10000 $4.52	Get Quote
TTI	100B4R7BW500XC100	WAFL			100	1 - 10 - 100 $4.47 1000 $4.47 10000 $4.47	Buy Now
Richardson RFPD	100B4R7BW500XC100				100	1 - 10 - 100 $3.68 1000 $2.48 10000 $2.32	Buy Now
Kyocera AVX Components 100B4R7BW1500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B4R7BW1500XTV)
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Avnet Americas	100B4R7BW1500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B4R7BW1500XTV					1 - 10 - 100 - 1000 $3.58 10000 $3.58	Get Quote
Kyocera AVX Components 100B4R7BW1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B4R7BW1500XT)
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Avnet Americas	100B4R7BW1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B4R7BW1500XT					1 - 10 - 100 - 1000 $3.58 10000 $3.58	Get Quote
Newark	100B4R7BW1500XT	Bulk			500	1 - 10 - 100 - 1000 $4.39 10000 $4.39	Buy Now
Kyocera AVX Components 100B4R7BWN1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B4R7BWN1500XT)
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Avnet Americas	100B4R7BWN1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B4R7BWN1500XT					1 - 10 - 100 - 1000 $4.33 10000 $4.33	Get Quote

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100B4R7BW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B4R7BW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 4.7PF 500V P90 1111		Original	PDF
100B4R7BW500XT1K		American Technical Ceramics	Ceramic Capacitor 4.7PF 500V P90 1111		Original	PDF

100B4R7BW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3	PDF
100B101JW Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to	Original	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1	PDF
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 transistor WB1 Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source	Original	MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1	PDF
0805 capacitor 10 pf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801	PDF
MRF9080LSR3 Abstract: 293D106X9035D2T MRF9080LR3 100B0R8BW Micron Semiconductor C1522 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF9080/D MRF9080LR3 MRF9080LSR3 MRF9080LR3 MRF9080LSR3 293D106X9035D2T 100B0R8BW Micron Semiconductor C1522	PDF
ATC capacitor 100b Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130 Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 ATC capacitor 100b MRF9130LSR3 irl130	PDF
AGR09180EF Abstract: JESD22-C101A Text: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180EF Hz--895 AGR09180EF DS04-123RFPP DS04-031RFPP) JESD22-C101A	PDF
marking Z4 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 4, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
Transistor J182 Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	MRF9100/D MRF9100 MRF9100R3 MRF9100SR3 MRF9100 MRF9100R3 Transistor J182 MRF9100SR3 08053G105ZATEA	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3	PDF
J182 transistor Abstract: J152 mosfet transistor MRF9100 MRF9100R3 MRF9100SR3 Transistor J182 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	MRF9100/D MRF9100R3 MRF9100SR3 MRF9100R3 J182 transistor J152 mosfet transistor MRF9100 MRF9100SR3 Transistor J182	PDF
100B220GW Abstract: 100B100GW Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100R3 MRF9100SR3 100B220GW 100B100GW	PDF
AGR09180EF Abstract: JESD22-C101A transistor z14 L Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global	Original	AGR09180EF Hz--895 AGR09180EF suit-20 AGR19K180U JESD22-C101A transistor z14 L	PDF
MOSFET J162 Abstract: J473 MOSFET J147 Text: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz	Original	AGRA10XM AGRA10 IS-95 DS03-127RFPP MOSFET J162 J473 MOSFET J147	PDF
AGRA10E Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable	Original	AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1 Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MBR1	PDF

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100B4R7BW Price and Stock

Kyocera AVX Components 100B4R7BW500XT1K

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Kyocera AVX Components 100B4R7BW1500XTV

Kyocera AVX Components 100B4R7BW1500XT

Kyocera AVX Components 100B4R7BWN1500XT

100B4R7BW Datasheets (2)

100B4R7BW Datasheets Context Search

Untitled

Untitled

100B101JW

Untitled

Untitled

marking WB1 sot-23

0805 capacitor 10 pf

PTFB090901EA

PTFB090901

MRF9080LSR3

ATC capacitor 100b

AGR09180EF

marking Z4

PTFB090901EA

Untitled

2a258 transistor

Transistor J182

Untitled

J182 transistor

100B220GW

AGR09180EF

MOSFET J162

AGRA10E

Untitled