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Kyocera AVX Components 100B200JW500XT1K CAP CER 20PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B200JW500XT1K	Cut Tape	19,598		1	1 $5.97 10 $4.06 100 $3.0469 1000 $2.63486 10000 $2.63486	Buy Now
	100B200JW500XT1K	Digi-Reel	19,598		1	1 $5.97 10 $4.06 100 $3.0469 1000 $2.63486 10000 $2.63486	Buy Now
	100B200JW500XT1K	Reel	11,000		1,000	1 - 10 - 100 - 1000 $2.26104 10000 $2.26104	Buy Now
ams OSRAM Group LZ1-00B202-0000 LED LZ1 BLUE 457NM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LZ1-00B202-0000	Digi-Reel	6,498		1	1 $4.06 10 $2.763 100 $4.06 1000 $4.06 10000 $4.06	Buy Now
	LZ1-00B202-0000	Cut Tape	6,498		1	1 $4.06 10 $2.763 100 $4.06 1000 $4.06 10000 $4.06	Buy Now
	LZ1-00B202-0000	Reel	6,000		500	1 - 10 - 100 - 1000 $1.75322 10000 $1.6315	Buy Now
EBV Elektronik	LZ1-00B202-0000			13 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components 100B200JTN500XT1K CAP CER 20PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B200JTN500XT1K	Cut Tape	3,914		1	1 $4.64 10 $3.176 100 $4.64 1000 $4.64 10000 $4.64	Buy Now
	100B200JTN500XT1K	Digi-Reel	3,914		1	1 $4.64 10 $3.176 100 $4.64 1000 $4.64 10000 $4.64	Buy Now
	100B200JTN500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $2.59875 10000 $2.59875	Buy Now
Kyocera AVX Components 100B201JW300XT1K CAP CER 200PF 300V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B201JW300XT1K	Reel	3,000		500	1 - 10 - 100 - 1000 $2.2052 10000 $2.2052	Buy Now
Kyocera AVX Components 100B200GT500XT1K CAP CER 20PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B200GT500XT1K	Digi-Reel	1,000		1	1 $9.49 10 $6.636 100 $5.1169 1000 $4.4988 10000 $4.4988	Buy Now
	100B200GT500XT1K	Cut Tape	1,000		1	1 $9.49 10 $6.636 100 $5.1169 1000 $4.4988 10000 $4.4988	Buy Now
	100B200GT500XT1K	Reel	1,000		1,000	1 - 10 - 100 - 1000 $4.31108 10000 $4.14983	Buy Now

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100B20 Datasheets (39)

Part	Manufacturer	Description	Datasheet Type	PDF
100B20	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
100B-2002	iNRCORE	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002	Pulse Electronics	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002F	iNRCORE	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002FNL	iNRCORE	MDL DUAL 100D 1:1 SMT TU RPB	Original	PDF
100B-2002FNLT	iNRCORE	MDL DUAL 100D 1:1 SMT TR RPB	Original	PDF
100B-2002FT	iNRCORE	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002FX	iNRCORE	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002FXNL	iNRCORE	MDL DUAL 100D 1:1 SMT TU RPB	Original	PDF
100B-2002FXNLT	iNRCORE	MDL DUAL 100D 1:1 SMT TR RPB	Original	PDF
100B-2002FXT	iNRCORE	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002NL	iNRCORE	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002NL	Pulse Electronics	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002NLT	iNRCORE	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF

100B-2002NLT	Pulse Electronics	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002T	iNRCORE	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002T	Pulse Electronics	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002X	iNRCORE	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002X	Pulse Electronics	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002XNL	iNRCORE	MDL DUAL 100D 1:1 SMT TU RPB	Original	PDF

100B20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 100B20F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage2.0k t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)2.0m @I(R) (A) (Test Condition)4.0m V(FM) Max.(V) Forward Voltage6.0	Original	PDF	100B20F Current100m Time300n Current20u StyleAxial-97
TH 2190 HOT Transistor Abstract: No abstract text available Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21180EF TH 2190 HOT Transistor
Untitled Abstract: No abstract text available Text: 10/100BASE-TX DUAL-PORT TRANSFORMER MODULES Military/Aerospace Grade Compliant with IEEE 802.3u and ANSI X3.263 standards 350 H OCL with 8mA bias Operating and storage temperature: 100B-2002F: -40°C to +85°C 100B-2002FX: -55°C to +125°C Encapsulated package withstands	Original	PDF	10/100BASE-TX 100B-2002F: 100B-2002FX: 1-100MHz 2-30MHz 100B-2002F 100B-2002FX 40MHz 50MHz 1-60MHz
Untitled Abstract: No abstract text available Text: 10/100BASE-TX DUAL-PORT TRANSFORMER MODULES Military / Aerospace Grade Compliant with IEEE 802.3u and ANSI X3.263 standards 350µH OCL with 8mA bias Operating and storage temperature: 100B-2002: -40°C to +85°C 100B-2002X: -55°C to +125°C IC grade transfer-molded package withstands	Original	PDF	10/100BASE-TX 100B-2002: 100B-2002X: 100B-2002 100B-2002X
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	PDF	MRF284 MRF284LR1 MRF284LSR1
100B201JT500XT Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	PDF	MRF21090/D MRF21090 MRF21090S
j340 motorola make Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	PDF	MRF21090/D MRF21090 MRF21090S MRF21090/D j340 motorola make
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	PDF	MRF284 MRF284LR1 MRF284LSR1 MRF284
ferroxcube for ferrite beads Abstract: MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF21125R3 MRF21125SR3
arion Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors MRF21090R3 MRF21090SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21090R3 MRF21090SR3 MRF21090SR3 arion
Untitled Abstract: No abstract text available Text: FREQUENCY CONTROL PRODUCTS HIGH FREQUENCY SURFACE MOUNT VCXO DFV S8-MLECPI 3.3 V 19.8±0.3 KEY FEATURES 15.24 12.8±0.2 622 to 800 MHz Parametric frequency multiplication 1.27 1.65 0.4 ps RMS jitter over 50 kHz to 80 MHz B.W. 2.54 18.4 OC-192/Sonet/SDH H = 9.30 mm	Original	PDF	OC-192/Sonet/SDH 100B20 100B25 100B50 100E30 100B20
672047 Abstract: b40 B2 RECTIFIER 400V EP102UCRC06 MCCB NON AUTO EP102UCC63 EP62 D06 EP102UCC06 GE circuit breaker epc 62 c02 EP101UCC63 EP102UCB16 Text: GE Energy Industrial Solutions 51210 GE Energy Industrial Solutions GE Industrial Solutions Industrial Solutions formerly Power Protection a division of GE Energy, is a ﬁrst class European supplier of low-voltage products including wiring devices, residential and	Original	PDF	EP100 EP250 R/2386/E/E 672047 b40 B2 RECTIFIER 400V EP102UCRC06 MCCB NON AUTO EP102UCC63 EP62 D06 EP102UCC06 GE circuit breaker epc 62 c02 EP101UCC63 EP102UCB16

GX03005522 Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs	Original	PDF	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 GX03005522 200S CDR33BX104AKWS MRF282ZR1 GX0300-55-22 MRF282
ATC 100C Abstract: CDR33BX104AKWS MRF284R1 MRF284SR1 C10 PH mallory 150 series Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	PDF	MRF284/D MRF284R1 MRF284SR1 MRF284R1 ATC 100C CDR33BX104AKWS MRF284SR1 C10 PH mallory 150 series
ferroxcube ferrite beads Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414 Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 ferroxcube ferrite beads C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414
MRF284 Abstract: wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from	Original	PDF	MRF284/D MRF284 MRF284SR1 MRF284 wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH
spw 049 transformer Abstract: spw -049 transformer spw 068 Text: WHEN PERFORMANCE MATTERS DC Power Supplies The First Name in Power Solutions The People at Acme Make it Happen When you need big power in a small space – turn to the first name in power solutions. Acme Electric did not become a leader in power quality by accident. Acme earned its reputation	Original	PDF	PS01-5M1008 spw 049 transformer spw -049 transformer spw 068
TH 2190 HOT Transistor Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21 Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21180EF AGR21180EF AGR19K180U AGR21180XF 12-digit TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A GHZ-21
imd 5210 Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
j340 motorola Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21090 MRF21090S j340 motorola
Untitled Abstract: No abstract text available Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS	OCR Scan	PDF	SD2900 SD2900 1021498C 1010936C
k 1225 data Abstract: mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125 MRF21125S Text: MOTOROLA O rder this docum ent by M RF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W -C D M A base station applications at frequencies from 2110	OCR Scan	PDF	MRF21125/D 465C-01 MRF21125S) MRF21125 MRF21125S k 1225 data mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125S

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100B20 Search Results

100B20 Price and Stock

Kyocera AVX Components 100B200JW500XT1K

ams OSRAM Group LZ1-00B202-0000

Kyocera AVX Components 100B200JTN500XT1K

Kyocera AVX Components 100B201JW300XT1K

Kyocera AVX Components 100B200GT500XT1K

100B20 Datasheets (39)

100B20 Datasheets Context Search

Untitled

TH 2190 HOT Transistor

Untitled

Untitled

Untitled

100B201JT500XT

Untitled

j340 motorola make

Untitled

ferroxcube for ferrite beads

Untitled

arion

Untitled

672047

GX03005522

ATC 100C

ferroxcube ferrite beads

MRF284

spw 049 transformer

TH 2190 HOT Transistor

imd 5210

j340 motorola

Untitled

k 1225 data