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Kyocera AVX Components 100A100JP150XT CAP 10PF 150V 5% 0505 MLC - Custom Tape W/Leader (Alt: 100A100JP150XT)
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Avnet Americas	100A100JP150XT	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A100JP150XT		4			1 $3.07 10 $2.36 100 $1.8 1000 $1.41 10000 $1.23	Buy Now
TTI	100A100JP150XT	Reel			500	1 - 10 - 100 - 1000 $1.37 10000 $1.06	Buy Now
Richardson RFPD	100A100JP150XT				500	1 - 10 - 100 - 1000 $1.08 10000 $0.8	Buy Now
Avnet Asia	100A100JP150XT			18 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100A100JP150XC100 MLC A/B/R - Waffle Pack (Alt: 100A100JP150XC100)
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Avnet Americas	100A100JP150XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A100JP150XC100					1 $3.4 10 $2.61 100 $2.03 1000 $1.48 10000 $1.4	Get Quote
Richardson RFPD	100A100JP150XC100				200	1 - 10 - 100 - 1000 $1.06 10000 $0.79	Buy Now
	100A100JP150XC100				200	1 - 10 - 100 - 1000 $1.08 10000 $0.8	Buy Now
Kyocera AVX Components 100A100JP150XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100A100JP150XT1K)
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Avnet Americas	100A100JP150XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A100JP150XT1K					1 - 10 - 100 - 1000 $1.15 10000 $1.07	Get Quote
Kyocera AVX Components 100A100JP150XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100A100JP150XTV)
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Avnet Americas	100A100JP150XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A100JP150XTV					1 $3.07 10 $2.36 100 $2 1000 $1.69 10000 $1.67	Get Quote
TTI	100A100JP150XTV	Reel			500	1 - 10 - 100 - 1000 $1.67 10000 $1.67	Buy Now
Kyocera AVX Components 100A100JP150XTV1K Silicon RF Capacitors / Thin Film MLC A/B/R
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Mouser Electronics	100A100JP150XTV1K					1 - 10 - 100 - 1000 $1.13 10000 $1.07	Get Quote

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100A100JP150X Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	PDF	MRFG35010MT1 MRFG35010NT1 MRFG35010MT1
6 017 03 61 Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07
Untitled Abstract: No abstract text available Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	PDF	RDMRFG35003MT1BWA MRFG35003MT1
transistor std 13007 Abstract: ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class	Original	PDF	MRFG35010N MRFG35010NT1 transistor std 13007 ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2
Untitled Abstract: No abstract text available Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	PDF	MRFG35003MT1 MRFG35003MT1 RDMRFG35003MT1BWA
MRFG35010ANT1 Abstract: IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35010AN MRFG35010ANT1 MRFG35010ANT1 IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT
transistor std 13007 Abstract: 0944 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class	Original	PDF	MRFG35010N MRFG35010NT1 MRFG35010N transistor std 13007 0944
transistor on 4959 Abstract: GT5040 Text: Document Number: MRFG35002N6 Rev. 0, 2/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35002N6 MRFG35002N6T1 MRFG35002N6 transistor on 4959 GT5040
100A100JP150X Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	PDF	MRFG35010MT1 MRFG35010NT1 MRFG35010MT1 100A100JP150X
Untitled Abstract: No abstract text available Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35010AN MRFG35010ANT1
6 017 03 61 Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,	Original	PDF	MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1 6 017 03 61 A113 MRFG35010ANT1 Z16C20
GT1040 Abstract: 466 907 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1 Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1 GT1040 466 907 A113 AN1955 MRFG35002N6AT1
LL1608-FHN2K Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	PDF	MRFG35005MT1 RDMRFG35005MT1BWA LL1608-FHN2K

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,	Original	PDF	MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1
P51ETR-ND Abstract: A113 A114 A115 AN1955 C101 JESD22 MRFG35010ANT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35010AN MRFG35010ANT1 P51ETR-ND A113 A114 A115 AN1955 C101 JESD22 MRFG35010ANT1
GT1040 Abstract: 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1 Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT MRFG35002N6T1 RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35002N6 MRFG35002N6T1 GT1040 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
marking us capacitor pf l1 Abstract: marking Z4 CDR33BX104AKWS MRFG35003MT1 MRFG35003NT1 freescale semiconductor body marking freescale power RF products FREESCALE MARKING C3 100A100JP150X ATC Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 BWA RF Power Field Effect Transistors Device Characteristics From Device Data Sheet	Original	PDF	MRFG35003NT1 MRFG35003MT1 MRFG35003NT1 MRFG35003MT1 marking us capacitor pf l1 marking Z4 CDR33BX104AKWS freescale semiconductor body marking freescale power RF products FREESCALE MARKING C3 100A100JP150X ATC
db14g Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	PDF	MRFG35010MT1 MRFG35010MT1 RDMRFG35010MT1BWA db14g CDR33BX104AKWS T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M
transistor marking z11 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet	Original	PDF	MRFG35005NT1 MRFG35005MT1 transistor marking z11
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRFG35010MT1 MRFG35010NT1.
2312 footprint dimension Abstract: A113 AN1955 MRFG35002N6T1 GT1040 Text: Document Number: MRFG35002N6 Rev. 1, 5/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35002N6 MRFG35002N6T1 2312 footprint dimension A113 AN1955 MRFG35002N6T1 GT1040
atc 17-33 Abstract: MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35010AN MRFG35010ANT1 atc 17-33 MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22
A113 Abstract: MRFG35010ANT1 MRFG35010NT1 100A100JP150X Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class	Original	PDF	MRFG35010N MRFG35010NT1 A113 MRFG35010ANT1 MRFG35010NT1 100A100JP150X

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100A100JP150X Datasheets Context Search

Untitled

6 017 03 61

Untitled

transistor std 13007

Untitled

MRFG35010ANT1

transistor std 13007

transistor on 4959

100A100JP150X

Untitled

Untitled

6 017 03 61

GT1040

LL1608-FHN2K

Untitled

P51ETR-ND

GT1040

marking us capacitor pf l1

db14g

transistor marking z11

Untitled

2312 footprint dimension

atc 17-33

A113