Untitled
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1005 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1005 Series is a medium-gain, thinfilm bipolar RF amplifier using resistive feedback and active bias
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PP-38
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tc1a
Abstract: GP 039 SMA
Text: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1005 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1005 Series is a medium-gain, thinfilm bipolar RF amplifier using resistive feedback and active bias
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PP-38
tc1a
GP 039 SMA
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Agilent 9981
Abstract: transistor n a683
Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC/PPA 1005 Series Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The 1005 Series is a medium-gain, thinfilm bipolar RF amplifier using resistive feedback and active bias
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1000MHz
PP-38
5963-3232E.
5963-2456E
Agilent 9981
transistor n a683
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power switching with IRFP450 schematic
Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2
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AN-1005
06-Dec-11
power switching with IRFP450 schematic
POWER MOSFET CIRCUIT
BJT, General electric
Linear Application Note
FET IRFP450
Avalanche
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POWER MOSFET CIRCUIT
Abstract: fuel injector mosfet automotive injector fuel injector test fuel injector driver FET injector MOSFET driver irfp*32n50k FET IRFP450 AN-1005 IRF7484
Text: Application Note AN-1005 Power MOSFET Avalanche Design Guidelines By Tim McDonald, Marco Soldano, Anthony Murray, Teodor Avram Table of Contents Page Table of Figures .3 Introduction .4
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AN-1005
POWER MOSFET CIRCUIT
fuel injector mosfet
automotive injector
fuel injector test
fuel injector driver FET
injector MOSFET driver
irfp*32n50k
FET IRFP450
AN-1005
IRF7484
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2SC5601
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5601 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package 1005 PKG
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2SC5601
2SC5601-T3
2SC5601
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09 06 248 6834
Abstract: 2SC5616-T3 2SC5616
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5616 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package 1005 PKG
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2SC5616
2SC5616-T3
09 06 248 6834
2SC5616-T3
2SC5616
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107D
Abstract: No abstract text available
Text: CHIP LED LAMPS GENERAL INFORMATION QUALITY CONTROL AND ASSURANCE Classification Endurance Test Environmental Test Test Item Reference Standard Test Conditions Operation Life MIL-STD-750 : 1026 MIL-STD-883 : 1005 JIS C 7021 : B-1 High Temperature High Humidity
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MIL-STD-202
MIL-STD-883
JIS-C-7021
MIL-STD-750
107D
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fuel injector mosfet
Abstract: automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector
Text: AN-1005 Rev. 1.0 POWER MOSFET AVALANCHE DESIGN GUIDELINES Application Note Tim McDonald Marco Soldano Anthony Murray Teodor Avram Page 1 of 17 TABLE OF CONTENTS Table of Figures Introduction Overview Avalanche Mode Defined Avalanche Occurrences In Industry Applications
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AN-1005
fuel injector mosfet
automotive injector
fuel injector driver FET
switching with IRFP450 schematic
injector MOSFET driver
INJECTOR
POWER MOSFET CIRCUIT
AN-1005
fuel injector test
solenoid injector
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5252 F 0911
Abstract: 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
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2SC5615
S21e2
2SC5615-T3
5252 F 0911
5252 F 1108
2SC5615-T3
2SC5615
5252 F 0906
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5252 F 1108
Abstract: 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
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2SC5615
S21e2
2SC5615-T3
5252 F 1108
5252 F 1104
5252 F 1120
5252 F 1103
5252 F 1114
2SC5615
5252 F 1105
5252 F 0911
5252 1101
5252 F 1105 transistor
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724G
Abstract: No abstract text available
Text: MLN1005-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN 1005-28S is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applcations up to 1200 MHz. PACKAGE STYLE .280" 4L STUD A 45° C E B FEATURES INCLUDE: E B • Gold Metalization
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MLN1005-28S
1005-28S
724G
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ASI1005
Abstract: ASI10524
Text: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz
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ASI1005
ASI1005
ASI10524
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5252 F 1108
Abstract: 5252 F 1008 5252 F 1004
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
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2SC5615
S21e2
2SC5615
2SC5615-T3
5252 F 1108
5252 F 1008
5252 F 1004
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5091-9704E
Abstract: 9704e
Text: Operational Considerations for LED Lamps and Display Devices Application Note 1005 Introduction In the design of a drive circuit for an LED lamp, an LED light bar, or an LED 7-segment display, the objective is to achieve optimum light output, power dissipation,
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5091-9704E
9704e
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ZLP32300
Abstract: PRS000303-1005 Z86D73
Text: ZLP32300 Low-Voltage Infrared OTP Programming Specification PRS000303-1005 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether
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ZLP32300
PRS000303-1005
ZLP32300P4016
40-pin
ZLP32300P4004
ZLP32300H2816
28-pin
ZLP32300H2804
ZLP32300
PRS000303-1005
Z86D73
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107D
Abstract: HX2040
Text: CHIP LED LAMPS GENERAL INFORMATION QUALITY CONTROL AND ASSURANCE Classification Endurance Test Environmental Test Test Item Reference Standard Test Conditions Result Operation Life MIL-STD-750 : 1026 MIL-STD-883 : 1005 JIS C 7021 : B-1 Connect with a power If = 20mA
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MIL-STD-202
240hrs
MIL-STD-883
000hrs
JIS-C-7021
MIL-STD-750
60min
107D
HX2040
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NTC thermistor 100k ohm b 3950
Abstract: NCP15XH103F04RC 70303 NTC thermistor 100K 3950 74283 IC NCP15XM472p03RC thermistor 10k 3380 0603 Termistor NTC 120
Text: R44E4.pdf 01.5.29 This is the PDF file of catalog No.R44E-4 NTC Thermistors for Temperature Compensation 0402 1005 Size 0.5±0.05 0201/0402/0603/0805 sized Chip NTC Thermistor have Ni barrier termination and provide excellent solderability and offer high stability in environment
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R44E-4
R44E4
300mm/min.
NTC thermistor 100k ohm b 3950
NCP15XH103F04RC
70303
NTC thermistor 100K 3950
74283 IC
NCP15XM472p03RC
thermistor 10k 3380 0603
Termistor NTC 120
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Untitled
Abstract: No abstract text available
Text: 1713-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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sd1005
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er a m p lifie r app lica tion, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • W orld Standard M inia tu re Package
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2SD1005
2SB804
sd1005
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U/25/20/TN26/15/850/HC 148 TRANSISTOR
Abstract: No abstract text available
Text: W BI HEWLETT m itia P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC/PPA 1005 Series Features Description • Frequency Range: 5 to 1000 MHz The 1005 Series is a medium-gain, thinfilm bipolar RF amplifier using
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PP-38
U/25/20/TN26/15/850/HC 148 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / SILICON TRANSISTOR / 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er am p lifie r app lication, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS
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2SD1005
2SD1005
2SB804
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2SD1005
Abstract: EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec
Text: DATA SHEET SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 10 05 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package
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2SD1005
2SB804
2SD1005
EL1202
2SB804
IEI-1213
DF RV transistor
marking lp nec
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9033 transistor
Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431
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302N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
9033 transistor
PT8828
2N4932
PT8740
BLW27
BLX66
sd1315
BLY94
MM1669
PT8811
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