MOSFET 800V 3A
Abstract: DC/AC to DC smps circuit diagram STP3NB100 SWITCHING WELDING SCHEMATIC BY MOSFET STP3NB100FP
Text: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V < 6Ω 3A STP3NB100FP 1000 V < 6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY
|
Original
|
PDF
|
STP3NB100
STP3NB100FP
O-220/TO-220FP
MOSFET 800V 3A
DC/AC to DC smps circuit diagram
STP3NB100
SWITCHING WELDING SCHEMATIC BY MOSFET
STP3NB100FP
|
STP3NB100
Abstract: STP3NB100FP
Text: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY
|
Original
|
PDF
|
STP3NB100
STP3NB100FP
O-220/TO-220FP
STP3NB100
STP3NB100FP
|
STP3NB100FP
Abstract: STP3NB100
Text: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY
|
Original
|
PDF
|
STP3NB100
STP3NB100FP
O-220/TO-220FP
STP3NB100FP
STP3NB100
|
GF30DL
Abstract: GF30GL GF30JL GF30KL GF30ML
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
|
Original
|
PDF
|
GF30DL
GF30ML
140Amp
DO-214AA
DO-214AA
MIL-STD-750,
GF30GL
GF30JL
GF30KL
GF30ML
|
GF30D
Abstract: No abstract text available
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
|
Original
|
PDF
|
GF30DL
GF30ML
140Amp
DO-214AA
DO-214AA
MIL-STD-75
GF30D
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
|
Original
|
PDF
|
GF30DLH
GF30MLH
140Amp
DO-214AA
DO-214AA
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
|
Original
|
PDF
|
GF30DLH
GF30MLH
140Amp
DO-214AA
DO-214AA
|
T3N100
Abstract: IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2
Text: Preliminary Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM
|
Original
|
PDF
|
IXTA3N100D2
IXTP3N100D2
O-263
O-220)
O-263
O-220
O-220AB
100ms
3N100D2
T3N100
IXTA3N100D2
3n100
ixta3n100
IXTP3N100D2
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
PDF
|
IXTA3N100D2
IXTP3N100D2
O-263
O-220)
O-263
O-220
O-220AB
100ms
3N100D2
|
Untitled
Abstract: No abstract text available
Text: VDSX ID on IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFETs RDS(on) = > ≤ 1000V 3A 6Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125
|
Original
|
PDF
|
IXTA3N100D2
IXTP3N100D2
O-263
O-220)
O-263
O-220
O-220AB
100ms
3N100D2
|
IXTA3N100D2
Abstract: No abstract text available
Text: Depletion Mode MOSFETs IXTA3N100D2 IXTP3N100D2 VDSX ID on RDS(on) = > ≤ 1000V 3A 6Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125
|
Original
|
PDF
|
IXTA3N100D2
IXTP3N100D2
O-263
O-220AB
O-220)
O-220
100ms
3N100D2
|
T3N100
Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220
Text: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
PDF
|
IXTA3N100P
IXTH3N100P
IXTP3N100P
O-263
3N100P
T3N100
IXTH3N100P
IXTP3N100P
IXTA3N100P
Siemens DIODE E 1220
|
RF1S4N100SM
Abstract: RFP4N100 TB334
Text: RFP4N100, RF1S4N100SM Data Sheet Title FP4 00, P4 00S bt 3A, 00V, 00 m, gh lte, Cha el wer OST utho eyrds ter- August 1999 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs Features The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect
|
Original
|
PDF
|
RFP4N100,
RF1S4N100SM
RFP4N100
RFP4N100SM
-55oC
150oC
RF1S4N100SM
TB334
|
T3N100
Abstract: IXTA3N100D2 82709 IXTP3N100D2 3N100D2 T3N1 IXTP3N100
Text: Depletion Mode MOSFETs IXTA3N100D2 IXTP3N100D2 VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125
|
Original
|
PDF
|
IXTA3N100D2
IXTP3N100D2
O-263
O-220)
O-263
O-220
O-220AB
100ms
3N100D2
T3N100
IXTA3N100D2
82709
IXTP3N100D2
T3N1
IXTP3N100
|
|
|
Untitled
Abstract: No abstract text available
Text: KBP3005 THRU KBP310 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 3A KBP VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability
|
Original
|
PDF
|
KBP3005
KBP310
22-Sep-11
21yangjie
|
SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41
|
Original
|
PDF
|
SMD4001-4007)
SR560
DO-27
UF4004
DO-41
UF4007
10A10
LL4148
FR101-FR107
SR506 Diode
diode 6A 1000v
SM4007 Diode
Diode SR360
diode her307
|
2510W
Abstract: RS1M diode
Text: Email: [email protected] Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10
|
Original
|
PDF
|
DO-214AC
ABS10
LL4148
MB10S
SM4007
MB10M
DB101-DB107;
DB151-DB157
DB101S-DB107S;
2510W
RS1M diode
|
QCA150AA100
Abstract: QCA150AA120 24TRANSISTOR E76102
Text: TRANSISTOR MODULE QCA150AA100 UL;E76102 M QCA150AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
|
Original
|
PDF
|
QCA150AA100
E76102
QCA150AA100
QCA150AA120
QCA150AA120
24TRANSISTOR
|
RECTIFIER DIODE 1000A schottky
Abstract: No abstract text available
Text: Gì SGS-IHOMSON m DTV32-1000A MTV32-600A CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER & MODULATION DIODES For complete specifications refer to "SCHOTTKY RECTIFIER DIODES" MAIN PRODUCTS CHARACTERISTICS MTV32 DTV32 IF peak 3A VRRM trr 600V 3A 1000V 50ns 1.6V
|
OCR Scan
|
PDF
|
MTV32
DTV32
DTV32-1000A
MTV32-600A
D027A
RECTIFIER DIODE 1000A schottky
|
IC 7805
Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Text: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)
|
OCR Scan
|
PDF
|
1N4001
1N4007
0V-1000V)
1N5391
1N5399
1N5400
1N5408
S6A05
IC 7805
7812 voltage regulator 5A
REGULATOR IC 7805
REGULATOR IC 7824
1n1001
6a smd transistor
REGULATOR IC 7905
7824 5A
REGULATOR IC 7812
7812 7912
|
D027A
Abstract: DIODE 1000a diode 628 1000A diode DTV32-1000A 1000v 3a diode 113 DTV32 MTV32-600A mtv32 switching DIODE 1000A
Text: DTV32-1000A MTV32-600A / ^ 7 SGS-THOMSON CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER & MODULATION DIODES MAIN PRODUCTS CHARACTERISTICS MTV32 DTV32 If peak 3A 3A Vr r m 600V 1000V trr 50ns 70ns Vf 1.6V 1.6V FEATURES • PRODUCTS SPECIFIC TO HORIZONTAL DE
|
OCR Scan
|
PDF
|
DTV32-1000A
MTV32-600A
MTV32
DTV32
D027A
09x/p2xÂ
7T2T237
DTV32-1000A
DIODE 1000a
diode 628
1000A diode
1000v 3a diode 113
DTV32
MTV32-600A
switching DIODE 1000A
|
10086B
Abstract: No abstract text available
Text: • R W .\A ADVANCED A P T 10086B V F R pow er Te c h n o l o g y “ 1000v POWER MOS V i 3a 0.860Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
OCR Scan
|
PDF
|
10086B
1000v
O-247
APT10086BVR
|
Untitled
Abstract: No abstract text available
Text: • R A dvanced W .\A APT10086B VR pow er Te c h n o lo g y " 1000v i 3a 0.860Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
|
OCR Scan
|
PDF
|
APT10086B
1000v
O-247
APT10086BVR
|
diode mur
Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.
|
OCR Scan
|
PDF
|
GE1001,
GE1002,
GE1003,
GE1004
GE1101,
GE1102,
GE1103,
GE1104
GE1301,
GE1302,
diode mur
600V 25A Ultrafast Diode
MUR850 diode
diode 400V 4A
igbt 1000v 80a
diode 400v 2A ultrafast
igbt 200v 30a
600v 30a IGBT
30A, 600v DIODE
igbt 200V 4A
|
